Engineering Papers⌕ Search

Engineering topics

Maserjian, J.

Publications and source records attributed to Maserjian, J..

72 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Tunneling in thin MOS structures

Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.

Maserjian, J.↗
NASA NTRS1974

Thin-film temperature sensor

Sensor measures rapid temperature changes in fluid streams. Sensor withstands contacts with various corrosive fluids, high fluid-flow rates, and turbulences caused by rapid changes in flow rates. Capacitor is part of resonant bridge circuit which produces ac voltage that is proportional to temperature.

Maserjian, J.↗
NASA NTRS1974

Tunneling through thin MOS structures - Dependence on energy /E-kappa/

The tunneling characteristics of Cr/SiO2/Si structures in the thickness range from 23 to 34 A are reported. The E-kappa dependence in the energy range extending 3.5 eV below the oxide conduction band is determined by the thickness dependence to be approximately of the Franz form with an effective mass ratio of 0.42. Tunneling into the indirect conduction band of silicon is reduced by a thickness-independent factor which decreases approximately exponentially with the energy below the direct band edge.

Maserjian, J.↗
NASA NTRS1973

Use of thin film light detector

A photovoltaic cell device with a trapezoidal barrier is described. An aluminum, magnesium, or tantalum base is vapor deposited on a quartz substrate. An oxide or nitride film of the base metal is produced as an insulator by reaction in a glow discharge plasma to a thickness of less than 100 Angstroms. A metal, preferably gold, conter-electrode is vapor deposited on the insulating layer. A bias generator of high impedance is used to set and shift or modulate the spectral response of the device.

Lewicki, G. W.↗
NASA NTRS1972

Thin-film ultraviolet detector and spectrometer

Typical metal-insulator-metal detector device is formed on quartz substrate. Base electrode is 3 to 6 nm aluminum layer, overcoated with 3 to 6 nm aluminum oxide or aluminum nitride, and capped with counter electrode of gold, lead, magnesium, or aluminum. Photoelectric yield data are given for Al-AlN-Au structure.

Lewicki, G. W.↗
NASA NTRS1972

Aluminum nitride insulating films for MOSFET devices

Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

Lewicki, G. W.↗
NASA NTRS1972

Thin-film temperature sensor.

A new device has been developed for sensing small and rapid temperature changes accompanying biochemical reactions. The active element consists of an evaporated thin-film capacitor having a relatively strong temperature dependence. This dependence is derived from electron trapping effects in the thin amorphous dielectric film. A voltage output of at least 50 mV/deg can be obtained prior to amplification by using a resonant ac bridge circuit operating at 100 kHz. The corresponding noise output for a 10 kHz bandwidth can with an optimum circuit be as low as 4 microvolts. Therefore, the minimum detectable temperature change would be 80 microdegrees at 10 kHz. Rapid thermal response is assured by supporting the thin-film capacitor on a thin anodic tantalum oxide film suspended across an electrolytically etched window in a tantalum foil.

Maserjian, J.↗
NASA NTRS1967

Thin film thermal detector

Abnormally large variation of capacitance with temperature is obtained in thin film capacitors when a fixed ionic space charge is present in sufficient density in a dielectric film. This effect is the basis for a new kind of thin film thermal detector, whose performance at room temperature equals or exceeds that of comparable devices at much lower temperatures.

Maserjian, J.↗
NASA NTRS1966

Titanium oxide thin films

Titanium oxide thin film capacitor with large temperature dependence for detecting infrared radiation

THIN FILM↗