An InP HEMT MMIC LNA with 7.2 dB Gain at 190 GHz
We present the highest frequency performance of any solid state MMIC amplifier.
HEMT↗
Engineering topics
Lai, R.
Publications and source records attributed to Lai, R..
InP HEMT MMICs for Radiometer Applications
We present results of developments of low noise millimeter wave receivers for space applications utilizing InP HEMT monolithic microwave integrated circuts (MMICs).
low noise millimeter wave receivers InP HEMT monol↗
A W-Band HEMT Based Power Amplifier Module for Millimeter-Wave LO Multiplier
We report on the performance of power amplifiers as local oscillator drivers for millimeter and submillimeter-wave receivers.
power↗
160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.
Kok, Y. L.↗
A 155-GHz Monolithic Low Noise Amplifier
This paper presents the design,fabrication and performance of a three-stage 155-GHz monolithic low noise amplifier (LNA) using 0.1 mue pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology.
Monolithic↗
Ultra-Low Noise HEMT Device Models: Application of On-Wafer Cryogenic Noise Analysis and Improved Parameter Extraction Techniques
Significant advances in the development of HEMT technology have resulted in high performance cryogenic low noise amplifiers whose noise temperatures are within an order of magnitude of the quantum noise limit. Key to the identification of optimum HEMT structures at cryogenic temperatures is the development of on-wafer noise and device parameter extraction techniques. Techniques and results are described.
electronic materials↗
A Monolithic W-Band Three-Stage LNA Using 0.1 Micron InAlAs/InGaAs/InP HEMT Technology
A monolithic W-band three-stage Low Noise Amplifiers (LNA) based on 0.1 um pseudomorphic InAlAs/InGaAs/InP (High Electron Mobility Transistors (HEMTs) has been developed. this LNA demonstrated a noise figure of 4.3 dB and an associated small signal gain of 19 dB at 100 GHz with a low dc power consumption of 20 mW. This is the best reported monolithic W-band LNA performance using InP-based HEMT technology and demonstrates the potential of InP HEMT technology for higher millimeter-wave applications.
Wang, H.↗
Low-temperature microwave characteristics of pseudomorphic In(x)Ga(1-x) As/In(0.52)Al(0.48)As modulation-doped field-effect transistors
Low-temperature microwave measurements of both lattice-matched and pseudomorphic In(x)Ga(1-x)As/In(0.48)As (x = 0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the In(x)Ga(1-x)As/In(0.52)Al(0.48)As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31 percent increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.
Lai, R.↗
W-band monolithic oscillator using InAlAs/InGaAs HEMT
A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.
Kwon, Y.↗