Engineering topics
Publications and source records attributed to Ladbury, Raymond L..
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Although heavy-ion single-event effects (SEE) pose serious threats to semiconductor devices in space, many missions face difficulties testing such devices at heavy-ion accelerators. Low-cost missions often find such testing too costly. Even well funded missions face issues testing commercial off the shelf (COTS) due to packaging and integration. Some missions wish to fly COTS systems with little insight into their components. Heavy-ion testing such parts and systems requires access to expensive and hard-to-access ultra-high energy ion accelerators, or significant system modification. To avoid these problems, some have proposed using recoil ions from high-energy protons as a proxy to bound heavy-ion SEE rates.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
Large solar particle events (SPE) threaten many elements of critical infrastructure. A 2013 study by Lloyds of London and Atmospheric and Environmental Research recently found that if a worst-case solar event like the 1859 Carrington Event struck our planet now, it could result on $0.6-$2.36 trillion in damages to the economy. In March 2014, researchers Y. D. Liu et al. revealed that just such an event had narrowly missed Earth in July 2012. The event was observed by the STEREO A spacecraft. In this presentation, we examine how the sun can pack such a punch from 150 million km away, the threats such solar particle events pose, their mechanisms and the efforts NASA and other space agencies are carrying out to understand and mitigate such risks.
We cover the models and statistics associated with single event effects (and total ionizing dose), why we need them, and how to use them: What models are used, what errors exist in real test data, and what the model allows us to say about the DUT will be discussed. In addition, how to use other sources of data such as historical, heritage, and similar part and how to apply experience, physics, and expert opinion to the analysis will be covered. Also included will be concepts of Bayesian statistics, data fitting, and bounding rates.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices.
We present the results of single events effects (SEE) testing and analysis investigating the effects of radiation on electronics.
The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.
No abstract available
We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.
Use of low-energy protons and high-energy light ions is becoming necessary to investigate current-generation SEU thresholds. Systematic errors can dominate measurements made with low-energy protons. Range and energy straggling contribute to systematic error. Low-energy proton testing is not a step-and-repeat process. Low-energy protons and high-energy light ions can be used to measure SEU cross section of single sensitive features; important for simulation.
We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer.
We present statistical techniques for evaluating random and systematic errors for use in flight performance predictions for large flight lots and ultra-high reliability applications.