Engineering topics
Publications and source records attributed to Johnston, A. H..
Several new radiation phenomena have been observed in laboratory testing of advanced microelectonics that are not yet of sufficient importance for typical space applications, but provide insight into the likely effects of scaling and device design on radiation hardness.
64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response.
This paper examines the oxide properties of several different device types, including three devices produced by one major manufacturer.
The state of understanding of the destructive SEGR event in power MOSFETs is relatively mature with large published efforts, both experimental and theoretical. However, gasps remain in the uderstanding of the phenomenon, including unexplained anomalies, emperical-only dependencies on some important device and incident ion physical parameters, and limited insight into latent effets.
This paper discusses single-event upset effets in flash memories, using heavy ions at the Texas A&M cyclotron. Initial results are presented for one manufacturer that compare uspet in the individual memory elemts with the more complex funtion failure modes that occur in the internal state machine and its control registers. This device is designed to function with either 5-V or 3.3-V power supply levels for read operations, but requires an additional 5 or 12-V power supply for write and erase operations.
The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers. However, a variety of LED technologies can be used in optocouplers and their sensitivity to proton displacement damage varies by about two orders of magnitude. Optocouplers are very simple hybrid devices, and the type of LED can be readily changed by the manufacturers with little cost impact. many optocoupler manufacturers purchase LEDs from outside sources with little knowledge or control of the manufacturing process used for the LED, leading to the possibility of very dramatic differences in radiation response (JPL has observed such differences for one type of optocoupler that is used in a hybrid power converter).
The operation and efficiency of optocouplers depend on a number of different factors, and the way that these factors are degraded by radiation must be properly understood in order to apply these devices in space systems.
Hardness Assurance (HA) techniques and total dose radiation characterization data for new generation linear and COTS devices from various manufacturers are presented. A bipolar op amp showed significant degradation at HDR, not at low dose rate environment. New generation low-power op amps showed more degradation at low voltage applications. HA test techniques for COTS devices are presented in this paper.
The effect of very low dose rates and equivalence of high-temperature irradiation are investigated for several device types that are sensitive to enhanced low dose-rate damage. New results are included at 0.001 rad(si)/s.
Microelectromechanical sensors, ADXL50 and XMMAS40G accelerometers, which are fabricated with surface micromachining techniques are characterized for total dose radiation. An unusual failure mechanism that appears to be associated with the sensor was observed and presented in this paper.
Applications of highly scaled devices in space applications are shown to be limited by hard errors from cosmic rays. Hard errors were first observed in 0.8 (micro)m DRAMs. For feature sizes below 0.5 (micro)m, scaling theory predicts that low power devices will have much lower hard error rates than devices optimized for high speed.
Many different analog-to-digital converters (ADCs) have been.
In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.
Discussed are hardness assurance and testing techniques to test and evaluate total dose radiation degradation of high resolution A/D converters. Because high-speed, high-resolution converters are critical parts in a digital signal processing or data acquisition system, the evaluation of performance in the early design phase is very important. Converters from three manufacturers are evaluated.
This paper reports on hard errors induced by single ions in dynamic memories. For ions with atomic number below 80, hard errors in DRAMs appear to be similar to the hard errors reported in previous work on SRAMs. One feature of these hard errors is that they tend to recover gradually with time, because of annealing, and are thus partially recoverable. However, for gold ions, a second type of hard error was discovered which is not recoverable, and appears to be due to catastrophic internal shorting rather than small changes in leakage current. Thus, nonrecoverable errors will likely occur even in devices which eliminate the extreme sensitivity to leakage current that is inherent in 4-T SRAMs and DRAMs. It is important to understand the mechanism that is responsible for nonrecoverable errors, and investigate the effect of device scaling.
This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.
Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.