Engineering topics
Publications and source records attributed to Ingle, W. M..
Fluid-bed vaporization followed by chemical vapor deposition generates large, semiconductor-grade silicon particles. Method is economical, high-volume alternative to conventional batch-processing methods. Harvested chunks, extracted in cyclone separator, are about 0.5 to 1.3 centimeters in diameter. Process is not limited to polymer feedstock; it utilizes any halosilane intermediate used in silicon production.
Silicon tetrafluoride gas removes metallurgical-grade impurities when passed over silicon in quartz tube. Technique allows inexpensive increase in throughout rate. Approach could improve silicon production for silicon solar cells.
A ball valve particularly suited for use in the handling of highly corrosive fluids is described. It is characterized by a valve housing formed of communicating segments of quartz tubing, a pair of communicating sockets disposed in coaxial alignment with selected segments of tubing for establishing a pair of inlet ports communicating with a common outlet port, a ball formed of quartz material supported for displacement between the sockets and configured to be received alternately thereby, and a valve actuator including a rod attached to the ball for selectively displacing the ball relative to each of the sockets for controlling fluid flow through the inlet ports.
Experimental apparatus and procedures used in the development of a 3-step SiF2(x) polymer transport purification process are described. Both S.S.M.S. and E.S. analysis demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). Recent electrical analysis via crystal growth reveals that the product contains compensated phosphorus and boron. The low projected product cost and short energy payback time suggest that the economics of this process will result in a cost less than the goal of $10/Kg(1975 dollars). The process appears to be readily scalable to a major silicon purification facility.
A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.
Quartz ball valve consisting of two quartz joints sealed back-to-back and seated in quartz sockets perform at temperatures of up to 1,250 C and in corrosive chemical environments without contamination or degradation.
A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.
The conversion of metallurgical grade silicon into semiconductor grade silicon by way of a three step SiF2 polymer transport purification process was investigated. Developments in the following areas were also examined: (1) spectroscopic analysis and characterization of (SiF2) sub x polymer and Si sub x F sub y homologue conversion; (2) demonstration runs on the near continuous apparatus; (3) economic analysis; and (4) elemental analysis.
The potential for a three step SiF2 polymer transport purification process was examined. The process involves reacting low cost mg silicon with SiF4 to yield SiF2 gas which is condensed to form polymeric (SiF2)x. The polymer is then heated above 400 C to yield Si, SiF4 and higher Si sub n F sub 2n+2 homologues. This report presents and discusses continuing progress on (1) observations on (SiF2)x polymer formation and depolymerization on the small coil, (2) mass balance studies, (3) partial pressures of SiF2 and SiF4, (4) AlF3 mass spectral studies, and (5) material analysis studies.