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Guertin, Steven M.

Publications and source records attributed to Guertin, Steven M..

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

FY12 End of Year Report for NEPP DDR2 Reliability

This document reports the status of the NASA Electronic Parts and Packaging (NEPP) Double Data Rate 2 (DDR2) Reliability effort for FY2012. The task expanded the focus of evaluating reliability effects targeted for device examination. FY11 work highlighted the need to test many more parts and to examine more operating conditions, in order to provide useful recommendations for NASA users of these devices. This year's efforts focused on development of test capabilities, particularly focusing on those that can be used to determine overall lot quality and identify outlier devices, and test methods that can be employed on components for flight use. Flight acceptance of components potentially includes considerable time for up-screening (though this time may not currently be used for much reliability testing). Manufacturers are much more knowledgeable about the relevant reliability mechanisms for each of their devices. We are not in a position to know what the appropriate reliability tests are for any given device, so although reliability testing could be focused for a given device, we are forced to perform a large campaign of reliability tests to identify devices with degraded reliability. With the available up-screening time for NASA parts, it is possible to run many device performance studies. This includes verification of basic datasheet characteristics. Furthermore, it is possible to perform significant pattern sensitivity studies. By doing these studies we can establish higher reliability of flight components. In order to develop these approaches, it is necessary to develop test capability that can identify reliability outliers. To do this we must test many devices to ensure outliers are in the sample, and we must develop characterization capability to measure many different parameters. For FY12 we increased capability for reliability characterization and sample size. We increased sample size this year by moving from loose devices to dual inline memory modules (DIMMs) with an approximate reduction of 20 to 50 times in terms of per device under test (DUT) cost. By increasing sample size we have improved our ability to characterize devices that may be considered reliability outliers. This report provides an update on the effort to improve DDR2 testing capability. Although focused on DDR2, the methods being used can be extended to DDR and DDR3 with relative ease.

Guertin, Steven M.↗
NASA NTRS2013

FY12 End of Year Report for NEPP DDR2 Reliability

This document reports the status of the NEPP Double Data Rate 2 (DDR2) Reliability effort for FY2012. The task expanded the focus of evaluating reliability effects targeted for device examination. FY11 work highlighted the need to test many more parts and to examine more operating conditions, in order to provide useful recommendations for NASA users of these devices. In order to develop these approaches, it is necessary to develop test capability that can identify reliability outliers. To do this we must test many devices to ensure outliers are in the sample, and we must develop characterization capability to measure many different parameters. For FY12 we increased capability for reliability characterization and sample size. We increased sample size by moving from loose devices to DIMMs with an approximate reduction of 20 to 50 times in terms of per DUT cost. By increasing sample size we have improved our ability to characterize devices that may be considered reliability outliers. This report provides an update on the effort to improve DDR2 testing capability. Although focused on DDR2, the methods being used can be extended to DDR and DDR3 with relative ease.

temperature stress↗
NASA NTRS2012

Programmatic Impact of SDRAM SEFI

The Elpida EDS5104(08)ABTA 512Mb SDRAM is examined for programmatic impact of SEE. Use cases for the devices including EDAC and mode register reload are examined. Results indicate some SEE mitigation methods require careful application to achieve system-level benefits, while some event types are essentially mitigated by the application use. In the studied devices MBE and SEFI are identified and investigated as mechanisms requiring special consideration.

Single Event Functionality Interrupt (SEFI)↗
NASA NTRS2012

Initial SEE Testing of Maestro

We have reported on initial SEE sensitivity of the full 49-core Maestro device. Supporting the low-level structures and qualitative system observation goals of phase 1 of testing. Observed sensitivities found to be consistent with Boeing predictions. Highlighted by the L1 data cache sensitivity which drives the rates on the current Maestro device. Presented details to the hardware and software setups that show where the limitations - highlighting future work. Key future work includes testing with memory and IO ports.

cache sensitivity↗
NASA NTRS2011

Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

Aveline, David C.↗
NASA NTRS2010

Interim test status report for NEPP scaled CMOS

This document serves as the fiscal year end report for the NEPP scaled complementary metal-oxide semiconductor (CMOS) task. Much of the effort this year focused on development of test capability and initial collection of data on SDRAM devices. Since the system has only just begun (in the last four weeks) to gather data, this report focuses on the test system and preliminary results.

Guertin, Steven M.↗
NASA NTRS2006

Microdose Induced Data Loss on Floating Gate Memories

Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.

radiation effects↗
NASA NTRS2006

Radiation Tests on 2Gb NAND Flash Memories

We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.

NAND circuits↗
NASA NTRS2004

Dynamic SDRAM SEFI Detection and Recovery Test Results

Single event functionality interrupt (SEFI) results are presented for Hynix SDRAMS. The SEFI response threshold is below LET 9.9 Mev-cm(exp 2)/mg and the saturated cross section is 6 x 10(exp -5)cm(exp 2). Dynamic SEFI identification was made, and in-situ recovery restored functionality. Verification results of the identification algorithm are presented. An observed high current radiation response is also presented.

radiation effects↗