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Gross, C.

Publications and source records attributed to Gross, C..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Unraveling the Diversity of Early Aqueous Environments and Climate on Mars Through the Phyllosilicate Record

Were Martian phyllosilicates formed on the surface or subsurface? Was early Mars warm or cold? How long was liquid water present on the surface of Mars? These are some of the many open questions about our neighboring planet. We propose that the mineralogy of the clay-bearing outcrops on Mars can help address these questions. Abundant phyllosilicates and aqueous minerals are observed nearly everywhere we can see the ancient rocks on Mars. Most bountiful among these is Fe/Mg-smectite. In this study we evaluate the nature and stratigraphy of clay outcrops observed on Mars and the presence of mixtures of other clays or other minerals with the ubiquitous Fe/Mg-smectite.

Bishop, J. L.↗
NASA NTRS2016

Mineralogy of Layered Outcrops at Mawrth Vallis and Implications for Early Aqueous Geochemistry on Mars

Recently developed CRISM parameters and newly available DTMs are enabling refined characterization of the mineralogy at Mawrth Vallis. A stratigraphy including 5 units is mapped using HRSC DTMs across 100s of kms and using HiRISE DTMs across 100s of meters. Transitions in mineralogic units were characterized using spectral properties and surface morphology. The observations point to an ancient wet and warm geologic record that formed the thick nontronite unit, a period of wet/dry cycling to create acid alteration, followed by leaching or pedogenesis to result in Al-phyllosilicates, and finally a drier, colder climate that left the altered ash in the form of nanophase aluminosilicates, rather than crystalline clays.

Bishop, J. L.↗
NASA NTRS1983

Self-correcting electronically scanned pressure sensor

A multiple channel high data rate pressure sensing device is disclosed for use in wind tunnels, spacecraft, airborne, process control, automotive, etc., pressure measurements. Data rates in excess of 100,000 measurements per second are offered with inaccuracies from temperature shifts less than 0.25% (nominal) of full scale over a temperature span of 55 C. The device consists of thirty-two solid state sensors, signal multiplexing electronics to electronically address each sensor, and digital electronic circuitry to automatically correct the inherent thermal shift errors of the pressure sensors and their associated electronics.

Gross, C.↗
NASA NTRS1982

Self-Correcting Electronically-Scanned Pressure Sensor

High-data-rate sensor automatically corrects for temperature variations. Multichannel, self-correcting pressure sensor can be used in wind tunnels, aircraft, process controllers and automobiles. Offers data rates approaching 100,000 measurements per second with inaccuracies due to temperature shifts held below 0.25 percent (nominal) of full scale over a temperature span of 55 degrees C.

Gross, C.↗
NASA NTRS1980

A high frequency silicon pressure sensor

Theoretical and design considerations as well as fabrication and experimental work involved in the development of high-frequency silicon pressure sensors with an ultra-small diaphragm are discussed. A sensor is presented with a rectangular diaphragm of 0.0127 cm x 0.0254 cm x 1.06 micron; the sensor has a natural frequency of 625 kHz and a sensitivity of 0.82 mv/v-psi. High-frequency results from shock tube testing and low-frequency (less than 50 kHz) comparison with microphones are given.

Kahng, S. K.↗
NASA NTRS1979

High-sampling-rate pressure transducer has in situ calibration

High-data-rate pressure sensor module can be calibrated after it is attached to an experimental setup. Electrically multiplexed sensor is designed for use in wind-tunnels and other applications requiring accurate measurement of many pressures in a short period of time.

Gross, C.↗
NASA NTRS1979

Electronically-scanned pressure measurement system

Sensor and associated microcomputer-based data acquisition unit can measure up to 1,024 unknown pressures at data rates as high as 10 kHz with maximum system inaccuracies of + or - 0.25 percent of full scale. System can be calibrated in place, making it easy to calibrate between runs for high cost or short run time wind tunnel testing.

Basta, T., Jr.↗
NASA NTRS1978

Electronically scanned pressure sensor module with in SITU calibration capability

This high data rate pressure sensor module helps reduce energy consumption in wind tunnel facilities without loss of measurement accuracy. The sensor module allows for nearly a two order of magnitude increase in data rates over conventional electromechanically scanned pressure sampling techniques. The module consists of 16 solid state pressure sensor chips and signal multiplexing electronics integrally mounted to a four position pressure selector switch. One of the four positions of the pressure selector switch allows the in situ calibration of the 16 pressure sensors; the three other positions allow 48 channels (three sets of 16) pressure inputs to be measured by the sensors. The small size of the sensor module will allow mounting within many wind tunnel models, thus eliminating long tube lengths and their corresponding slow pressure response.

Gross, C.↗
NASA NTRS1977

A miniature 48-channel pressure sensor module capable of in situ calibration

A new high data rate pressure sensor module with in situ calibration capability has been developed by the Langley Research Center to help reduce energy consumption in wind-tunnel facilities without loss of measurement accuracy. The sensor module allows for nearly a two order of magnitude increase in data rates over conventional electromechanically scanned pressure sampling techniques. This module consists of 16 solid state pressure sensor chips and signal multiplexing electronics integrally mounted to a four position pressure selector switch. One of the four positions of the pressure selector switch allows the in situ calibration of the 16 pressure sensors; the three other positions allow 48 channels (three sets of 16) pressure inputs to be measured by sensors. The small size of the sensor module will allow mounting within many wind-tunnel models, thus eliminating long tube lengths and their corresponding slow pressure response.

Gross, C.↗
NASA NTRS1976

Strain effect on the electronic density of states and dc conductivity of disordered binary alloys

A single-band model calculation is developed for the effect of strain on the temperature variation of the electronic density of states and the electrical onductivity of disordered binary alloys. Experimentally, strain has only a small effect on the temperature variation of the conductivity. Shifts in the Fermi level and distortions of the density of states under different strains are found from the calculations. The small change in the temperature variation of conductivity under strain is a result of competition between these two effects. Methods to extract physical parameters characterizing alloys from measurements of the strain and temperature variation of the resistivity are discussed. Suggestions are also made about materials-selection criteria for strain-gauge applications.

Hwang, H.-C.↗
NASA NTRS1976

Fast pressure-sensor system

Miniature silicon-diaphragm sensors and signal multiplexer are mounted to ganged zero-operate-calibrate pressure selector switches. Device allows in-situ calibration, can be computer controlled, and measures at approximately 10,000 readings per second.

Gross, C.↗
NASA NTRS1976

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Pisciotta, B. P.↗
NASA NTRS1975

Sputtered gold mask for deep chemical etching of silicon

Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

Pisciotta, B. P.↗
NASA NTRS1975

An investigation of RF sputter etched silicon surfaces using helium ion backscatter

The effect of RF sputter etching on the (111) surface of silicon was studied by observing backscatter spectra from a 2 MeV, He-4(+) beam oriented along the silicon 111 orientation channel. Silicon samples were RF sputter etched in an argon discharge at electrode bias potentials ranging from 0.5 to 2.5 kV. The samples were sputter etched for a time sufficient for the lattice damage to reach saturation. Analysis of these samples revealed that the thickness of this damage layer and the concentration of trapped argon increased with electrode bias potential. An annealing study of these damaged surfaces was carried out to 900 C.

Sachse, G. W.↗
NASA NTRS1973

Characteristics of infrared photodetectors produced by radiation doping.

High-energy electrons (approximately 7 MeV) were used to radiation-dope extrinsic silicon. Both n- and p-type silicon photodetectors were fabricated using this doping technique. The 500 K blackbody responsivity, spectral response, and peak detectivity were determined for these devices. The peak detectivity values measured were 4.8 Gm Hz to the 1/2 power per W at 2.15 microns for 0.1-ohm-cm n-type devices and 3.7 Gm Hz to the 1/2 power per W at 40 microns for 10-ohm-cm p-type detectors. A comparison of the thermally generated background majority carrier concentration for radiation-doped and conventional impurity-doped detectors is made.

Gross, C.↗
NASA NTRS1972

Insulated-gate field-effect transistor strain sensor

Strain sensors that can be switched on and off were fabricated from p-channel IGFET on thin filament n-type silicon crystals with silicon dioxide layer sputtered over transistor for passivation. Applications include integration with microelectronic circuits for multiplexing.

Gross, C.↗