NASA NTRS · 19720000730
Insulated-gate field-effect transistor strain sensor
Abstract
Strain sensors that can be switched on and off were fabricated from p-channel IGFET on thin filament n-type silicon crystals with silicon dioxide layer sputtered over transistor for passivation. Applications include integration with microelectronic circuits for multiplexing.
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Gross, C.. 1972-12-01. Insulated-gate field-effect transistor strain sensor. https://ntrs.nasa.gov/citations/19720000730
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