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Chen, Yuan

Publications and source records attributed to Chen, Yuan.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

On Component Reliability and System Reliability for Space Missions

This paper is to address the basics, the limitations and the relationship between component reliability and system reliability through a study of flight computing architectures and related avionics components for NASA future missions. Component reliability analysis and system reliability analysis need to be evaluated at the same time, and the limitations of each analysis and the relationship between the two analyses need to be understood.

Chen, Yuan↗
NASA NTRS2011

Heavy Lift Vehicle (HLV) Avionics Flight Computing Architecture Study

A NASA multi-Center study team was assembled from LaRC, MSFC, KSC, JSC and WFF to examine potential flight computing architectures for a Heavy Lift Vehicle (HLV) to better understand avionics drivers. The study examined Design Reference Missions (DRMs) and vehicle requirements that could impact the vehicles avionics. The study considered multiple self-checking and voting architectural variants and examined reliability, fault-tolerance, mass, power, and redundancy management impacts. Furthermore, a goal of the study was to develop the skills and tools needed to rapidly assess additional architectures should requirements or assumptions change.

Hodson, Robert F.↗
NASA NTRS2011

Comparison Modeling of System Reliability for Future NASA Projects

A National Aeronautics and Space Administration (NASA) supported Reliability, Maintainability, and Availability (RMA) analysis team developed a unique RMA analysis methodology using cut set and importance measure analysis in order to comparison model proposed avionics computing architectures. In this paper we will present this efficient application of the RMA analysis methodology for importance measures that includes Reliability Block Diagram (RED) Analysis, Comparison modeling, Cut Set Analysis, and Importance Measure Analysis. We will also demonstrate that integrating RMA early in the system design process as a key to success by providing a fundamental decision metric supporting design selection. The RMA analysis methodology presented in this paper and applied to the avionics architectures enhances the usual way of predicting the need for redundancy based on failure rates or subject matter expert opinion. Using the REDs and the minimal cut sets, along with the Fussell-Vesely (FV) factors, importance measures are calculated for each functional element in the architectures. This paper presents an application of the FV importance measures and presents an improved methodology for using importance measures in success space (instead of failure space) to compare architectures. These importance measures are used to determine which functional element would be most likely to cause a system failure, thus, quickly identifying the path to increase the overall system reliability by either procuring more reliable functional elements or adding redundancy. This application of the RMA analysis methodology, using RBD analysis, cut set analysis, and the importance measure analysis, allows the avionics design team to better understand and compare the vulnerabilities in each of the architectures, enabling them to address the deficiencies in the design architectures more efficiently, while balancing the need to design for optimum weight and space allocations.

Gillespie, Amanda M.↗
NASA NTRS2010

Precise delay measurement through combinatorial logic

A high resolution circuit and method for facilitating precise measurement of on-chip delays for FPGAs for reliability studies. The circuit embeds a pulse generator on an FPGA chip having one or more groups of LUTS (the "LUT delay chain"), also on-chip. The circuit also embeds a pulse width measurement circuit on-chip, and measures the duration of the generated pulse through the delay chain. The pulse width of the output pulse represents the delay through the delay chain without any I/O delay. The pulse width measurement circuit uses an additional asynchronous clock autonomous from the main clock and the FPGA propagation delay can be displayed on a hex display continuously for testing purposes.

Burke, Gary R.↗
NASA NTRS2009

Wide-temperature integrated operational amplifier

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Mojarradi, Mohammad↗
NASA NTRS2009

Flash memory reliability NEPP 2008 task final report

This is the preliminary report which is based on the flash memory reliability studies conducted during the first year (2008) of the multi-year NEPP task. The report outlines the technology and reliability challenges for advanced flash memory technologies, summarizes the test results and analyses of reliability characterizations performed on the selected flash memory devices during 2008, and provides the preliminary thoughts on the risk mitigation approaches on using advanced flash memory technologies for space applications.

Chen, Yuan↗
NASA NTRS2008

Current Leakage Evolution in Partially Gate Raptured Power MOSFETs

It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.

metal oxide semiconductor field-effect transistors↗
NASA NTRS2008

Scaled CMOS technology reliability users guide

This work is sponsored by the NASA Electronic Parts and Packaging (NEPP) Program. One of the objectives of this task is to prepare a body of knowledge guideline document summarizing the CMOS technology scaling impact on CMOS parts and parts reliability for space applications. Scaling impact on parts radiation sensitivity is not addressed in this report.

Chen, Yuan↗
NASA NTRS2007

Improved On-Chip Measurement of Delay in an FPGA or ASIC

An improved design has been devised for on-chip-circuitry for measuring the delay through a chain of combinational logic elements in a field-programmable gate array (FPGA) or application-specific integrated circuit (ASIC). In the improved design, the delay chain does not include input and output buffers and is not configured as an oscillator. Instead, the delay chain is made part of the signal chain of an on-chip pulse generator. The duration of the pulse is measured on-chip and taken to equal the delay.

Chen, Yuan↗
NASA NTRS2007

Wide-Temperature-Range Integrated Operational Amplifier

A document discusses a silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) integrated- circuit operational amplifier to be replicated and incorporated into sensor and actuator systems of Mars-explorer robots. This amplifier is designed to function at a supply potential less than or equal to 5.5 V, at any temperature from -180 to +120 C. The design is implemented on a commercial radiation-hard SOI CMOS process rated for a supply potential of less than or equal to 3.6 V and temperatures from -55 to +110 C. The design incorporates several innovations to achieve this, the main ones being the following: NMOS transistor channel lengths below 1 m are generally not used because research showed that this change could reduce the adverse effect of hot carrier injection on the lifetimes of transistors at low temperatures. To enable the amplifier to withstand the 5.5-V supply potential, a circuit topology including cascade devices, clamping devices, and dynamic voltage biasing was adopted so that no individual transistor would be exposed to more than 3.6 V. To minimize undesired variations in performance over the temperature range, the transistors in the amplifier are biased by circuitry that maintains a constant inversion coefficient over the temperature range.

Mojarradi, Mohammad↗
NASA NTRS2006

Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS

As microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s).

CMOS integrated circuits↗
NASA NTRS2006

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

operational amplifier↗
NASA NTRS2005

Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM

As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.

CMOS integrated circuits↗
NASA NTRS2005

Design for ASIC reliability for low-temperature applications

In this paper, we present a methodology to design for reliability for low temperature applications without requiring process improvement. The developed hot carrier aging lifetime projection model takes into account both the transistor substrate current profile and temperature profile to determine the minimum transistor size needed in order to meet reliability requirements. The methodology is applicable for automotive, military, and space applications, where there can be varying temperature ranges. A case study utilizing this methodology is given to design for reliability into a custom application-specific integrated circuit (ASIC) for a Mars exploration mission.

reliability↗
NASA NTRS2005

Impact of Negative Bias Temperature Instability on FPGAs

In this sliide presentation the statistical impact of PMOS Negative Bias Temperature Instability (NBTI) degradation on circuit delay is reviewed. An on-board timing circuitry that was been developed to detect and measure timing delays in SRAM-based LUT commercial FPGAs is described. The initial experimental data on the on-board timing circuit are reviewed.

pixel reliability↗
NASA NTRS2004

A Statistical Approach to Characterizing the Reliability of Systems Utilizing HBT Devices

This paper presents a statistical approach to characterizing the reliability of systems with HBT devices. The proposed approach utilizes the statistical reliability information of the HBT individual devices, along with the analysis on the critical paths of the system, to provide more accurate and more comprehensive reliability information about the HBT systems compared to the conventional worst-case method.

hetero bipolar transistors (HBTs)↗