Engineering topics

Chen, C. P.

Publications and source records attributed to Chen, C. P..

At least 73 records · Page 4

NASA NTRS1986

Studies of acoustic emission from point and extended sources

The use of simulated and controlled acoustic emission signals forms the basis of a powerful tool for the detailed study of various deformation and wave interaction processes in materials. The results of experiments and signal analyses of acoustic emission resulting from point sources such as various types of indentation-produced cracks in brittle materials and the growth of fatigue cracks in 7075-T6 aluminum panels are discussed. Recent work dealing with the modeling and subsequent signal processing of an extended source of emission in a material is reviewed. Results of the forward problem and the inverse problem are presented with the example of a source distributed through the interior of a specimen.

Sachse, W.↗

NASA NTRS1986

Calculation of confined gas-particle two-phase turbulent flows

Numerical calculations have been carried out for gas-particle confined turbulent flows using a recently developed two-phase turbulence closure model. The present modeling scheme utilizes Eulerian formulations of the transport equations and accounts for the combined effects of interphase slip and turbulent dispersion of particles. A multiple-scale turbulence model is used for the turbulent field modeling of the underlying fluid flow. For the particle size and particle loading considered in this study, the fluid turbulence transport equations must be modified to include the damping effects of particles. Predictions and comparisons are made in the fully developed gas-solid pipe flow and the confined particle-laden jet. Numerical results are in reasonably good agreement with the published experimental information.

Chen, C. P.↗

NASA NTRS1986

Numerical analysis of confined recirculating gas-solid turbulent flows

Particle dispersion in confined recirculating turbulent flows has been investigated numerically. The present computational scheme utilizes Eulerian forms of the governing equations and allows two-way coupling between gas and solid phases. A recently developed two-phase closure model based on the multiple-scale turbulence model was used for the estimation of turbulent viscosities and diffusivities. For the particle size and loading considered in this study, the effect of particulate phase on the conveying gas is small, the nonequilibrium between the two phases is significant. Effects of recirculation, expanded chamber size and secondary annular jet momentum on the particle mixing rate are also investigated. In general, the present numerical results are in reasonably good agreement with the available experimental data.

Chen, C. P.↗

NASA NTRS1986

Silicon stress/strain activities at JPL

In-house Jet Propulsion Laboratory (JPL) work is described for silicon stress/strain, including the study of fracture mechanics, and on the high-temperature test program in which the low-strain response of silicon sheet materials above 1000 C is being measured and high temperature material property data are being determined.

Chen, C. P.↗

NASA NTRS1986

Crack growth in single-crystal silicon

Crack growth in single-crystal silicon at room temperature in air was evaluated by double torsion (DT) load-relaxation method and monitored by acoustic emission (AE) technique. Both DT and AE methods indicated lack of subcritical crack growth in silicon. At the critical stress intensity factor, the crack front was found to be jumping several times in a 'mirror' region and then followed by fast crack growth in a 'hackle' region. Hackle marks were found to be associated with plastic deformation at the tip of the fast moving crack. No dislocation etch pits were found in the 'mirror' region, in which crack growth may result from interatomic bonds broken at the crack tip under stress without any plastic deformation. Acoustic emission appears to be spontaneously generated from both interatomic bonds broken and dislocation generation at the moving crack tip during the crack growth in single-crystal silicon.

Chen, C. P.↗

NASA NTRS1985

Studies on effects of boundary conditions in confined turbulent flow predictions

The differences in k epsilon model predictions of plane and axisymmetric expansion flows is investigated. The prediction of the coaxial jet for different velocity ratios of the annular to central jet is presented. The effects of inlet kinetic energy and the energy dissipation rate profiles are investigated for swirling and nonswirling flows. The effects of expansion ration and Reynolds number on the reattachment length are also presented. The results show that the inlet k and epsilon profiles have the most significant effect on the reattachment length and flow redevelopment for the case of coaxial jet of high velocity ratio. A comparison of k epsilon model predictions for the pipe expansion flow by the PHOENICS and TEACH codes reveals some discrepancies in the predicted results. TEACH prediction seems to produce unrealistic kinetic energy profiles in some regions of the flow. PHOENICS code produces a long tail in the recirculation region under certain conditions.

Nallasamy, M.↗

NASA NTRS1985

Confined swirling jet predictions using a multiple-scale turbulence model

A recently developed multiple scale turbulence model is used for the numerical prediction of isothermal, confined turbulent swirling flows. Because of the streamline curvature and nonequilibrium spectral energy transfer nature of the swirling flow, the utilized multiple scale turbulence model includes a different set of response equations for each of the large scale energetic eddies and the small scale transfer eddies. Predictions are made of a confined coaxial swirling jet in a sudden expansion and comparisons are made with experimental data and with the conventional single scale two equation model. The multiple scale model shows significant improvement of predictions of swirling flows over the single scale k epsilon model. The sensitivity study of the effect of prescribed inlet turbulence levels on the flow fields is also included.

Chen, C. P.↗

NASA NTRS1985

Multiple-scale turbulence closure modeling of confined recirculating flows

A multiple-scale turbulence closure scheme is developed for the numerical predictions of confined recirculating flows. This model is based on the multiple-time-scale concepts of Hanjalic et al. (1980) and takes into account the non-equilibrium spectra energy transfer mechanism. Problems concerning new formulation of energy transfer rate equations and subsequent model coefficient redefinition and energy spectrum partition are discussed. Comparisons are made with several experiments of internal recirculating flows for the purpose of model validation. Numerical results using the present model show significant improvement of predictive capability over that obtained with the single-scale k-epsilon model and show promising potential for complex turbulent flow predictions.

Chen, C. P.↗

NASA NTRS1985

Stress rate and proof-testing of silicon wafers

Fracture mechanics test methods were applied to evaluate the proof-test characteristics of single-crystal silicon wafers. The results indicate that the strength distribution of silicon wafers is truncated by proof-testing. No subcritical crack growth occurred during proof-loading, as inferred from the lack of a stress-rate effect on strength. Mechanical proof-testing appears to be an effective method for eliminating weak samples before cell processing.

Chen, C. P.↗

NASA NTRS1985

Acoustic emission monitoring crack propagation in single crystal silicon

The feasibility of acoustic emission (AE) monitoring of cracking and crack propagation in Si semiconductor materials was evaluated experimentally. A double torsion load relaxation method was employed wherein the propagation velocity and the AE levels in precracked (but not notched) boron-doped wafers were recorded simultaneously. A numerical model for the critical stress intensity factor (KIC) was used to relate the crack growth velocity, the instantaneous load and the load relaxation rate. All specimens were monitored with acoustic transducers at six points and examined with SEM after failure. The AE levels reached a peak amplitude of 70 dB at a KIC of 0.997 MNm to the -3/2 for cracking in the 111 plane. No AE was detected before the load reached the KIC, indicating that no subcritical crack growth occurs in Si. The results support the use of AE for monitoring crack propagation in crystal Si.

Chen, C. P.↗

NASA NTRS1985

Fracture strength of GaAs solar cells as a function of manufacturing process steps

Fracture of single crystal GaAs substrate during the solar cell processing is an important factor in solar cell yield and cost. Fracture mechanics technique was utilized to evaluate cell cracking characteristics and changes in fracture strength of GaAs solar cells in a present state-of-the-art of manufacturing process for GaAs solar cells from wafer to complete cell of a typical production line. Considerable change in the fracture strength of GaAs solar cells as a function of cell processing was found. The strength data were described by Weibull statistical analysis and can be interpreted with the change of flaw distribution of each of the manufacturing process steps.

Chen, C. P.↗

NASA NTRS1984

Fracture mechanics evaluation of GaAs

A data base of mechanical and fracture properties for GaAs was generated. The data for single crystal GaAs will be used to design reusable GaAs solar modules. Database information includes; (1) physical property characterizations; (2) fracture behavior evaluations; and (3) strength of cells determined as a function of cell processing and material parameters.

Chen, C. P.↗

NASA NTRS1984

Minimum wafer thickness by rotated ingot ID wafering

The efficient utilization of materials is critical to certain device applications such as silicon for photovoltaics or diodes and gallium-gadolinium-garnet for memories. A variety of slicing techniques has been investigated to minimize wafer thickness and wafer kerf. This paper presents the results of analyses of ID wafering of rotated ingots based on predicted fracture behavior of the wafer as a result of forces during wafering and the properties of the device material. The analytical model indicated that the minimum wafer thickness is controlled by the depth of surface damage and the applied cantilever force. Both of these factors should be minimized. For silicon, a minimum thickness was found to be approximately 200 x 10 - 6th m for conventional sizes of rotated ingot wafering. Fractures through the thickness of the wafer rather than through the center supporting column were found to limit the minimum wafer thickness. The model suggested that the use of a vacuum chuck on the wafer surface to enhance cleavage fracture of the center supporting core and, with silicon, by using 111-line-type ingots could have potential for reducing minimum wafer thickness.

Chen, C. P.↗

NASA NTRS1984

Fracture behavior in silicon

The fracture mechanics of crystalline Si are reviewed, together with known techniques for minimizing the occurences of fracture and/or their effects. The fracture toughness (Kic) of Si varies only 10 percent from cell-to-cell and standard values have been established for different types of crystalline Si cells. A critical flaw size of 10-100 microns has been identified, and also pertains to polycrystalline materials. Chemical polishing is known to double the value of Kic, while edge rounding has no effect. Internal stresses, particularly those caused during ribbon growth, do not exceed 10 percent of Kic. External stresses are imposed by the module hardware and the ambient environment. Multiple contacts reduce the effects of cell fracture and series-parallel wiring in modules in arrays ameliorates the effects of single-cell failures. During manufacturing, maintenance of quality control and removal of sheets displaying aberrations can, depending on the costs and the implementation of the array reliability features, result in arrays delivering any desired level of reliability.

Leipold, M. H.↗

NASA NTRS1984

Mechanical proof testing in cell processing

Fracture mechanics test methods are applied to evaluate the proof test characteristics of silicon Cz wafers. The results indicate that the strength distribution of silicon wafers is truncated by proof testing and no subcritical crack growth in silicon is observed during proof loading. Mechanical proof testing appears to be an effective method to eliminate weak samples before cell processing.

Chen, C. P.↗

NASA NTRS1983

Fracture Strength of Silicon Solar Cells

Tests during processing show way to reduce breakage and increase yield. Silicon wafer twisted by four equally spaced dowel pins, two pushing up and two pushing down. Uniform shear stress found along line 45 degrees from axes of two load pairs. Test helping to develop reliable information on nature and source of flows causing cell fracture.

Chen, C. P.↗

NASA NTRS1982

Minimum silicon wafer thickness for ID wafering

An analytical model, based on fracture mechanics analysis, is proposed for estimating the minimum wafer thickness as a function of the diameter requirement for solar cells. The conditions under which the model can be applied are discussed with reference to the critical flaw size, the applied force, and the width of the side support. It is shown that the equivalent cantilever force applied during ID slicing can be estimated from the wafering mechanical yield data. The width of the wafer side support was found to be a significant factor in controlling the minimum allowable wafer thickness during slicing. Wafer side support width requirements were found to increase with decreasing wafer thickness.

Chen, C. P.↗

NASA NTRS1982

Fracture of directionally solidified multicrystalline silicon

Fracture toughness data is given for multicrystalline silicon which has been prepared by directional solidification. Results indicated a plane-strain fracture toughness of 0.8 to 0.87 MN/m to the 3/2 power, which is consistent with data for single-crystal silicon.

Chen, C. P.↗