Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “vanadium oxide (VO₂)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

VO 2 phase change electrodes in Li-ion batteries

Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation has not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO 2 ) cathode that undergoes a metal–insulator transition due to the first-order structural phase transition at an accessible temperature of 68 °C for battery operation. Using a suitable electrolyte operable across the phase transition range and compatible with vanadium oxide cathodes, we studied the effect of cathode active material structural changes on lithium insertion followed by the electrochemical characteristics above and below the phase transition temperature. The high-temperature VO 2 phase shows significantly improved capacitance, enhanced current rate capabilities, improved electrical conductivity and lithium-ion diffusivity compared to the insulating low temperature phase. In conclusion, this opens up new avenues for electrode design, allowing manipulation of electrochemical reactions around phase transition temperatures, and in particular enhancing electrochemical properties at elevated temperatures contrary to the existing class of battery chemistries that lead to performance deterioration at elevated temperatures.

25 ENERGY STORAGE↗
DOE OSTI2023

Effect of the Deposition of Vanadium-Oxide on the Photocatalytic Activity of TiO2 Nanotubes and Its Photodiode Performance Interfaced with CH3NH3PbI3 Single Crystal

In this study, we report the influence of vanadium oxide (VO), as a photosensitive component, on the photoactivity of TiO2 nanotubes (TNTs). A series of TNTs of varying tube diameter were synthesized by the anodization of titanium foils at different voltages, while vanadium oxide was deposited on TNTs by wet chemical deposition. An improvement in the optical properties of nanotubes was observed after the deposition of vanadium oxide. An improvement in the optical properties (redshift in UV-Vis spectra) of TNTs and TNT/VO was noted. The photocatalytic activity was improved with increasing tube diameter, while it was weakened after the deposition of VO. Furthermore, photoactivity was investigated in photodiodes based on TNTs or TNT/VO and single crystals of CH3NH3PbI3. The photoelectric measurement revealed that different TNT diameters did not influence the I-V characteristic of the photodiodes, while the deposition of VO improved the photocurrent for smaller TNTs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Structure and Reactivity of Single-Site Vanadium Catalysts Supported on Metal–Organic Frameworks

Single-site catalysts with active species anchored over metal–organic framework (MOF) supports have garnered significant interest in recent years. Catalysts with vanadium oxide (VO x ) species immobilized over Zr-NU-1000 and Hf-MOF-808 (which have nodes containing six Zr (IV) or Hf (IV) ions, respectively) were recently characterized experimentally and were reported to be active for the selective oxidation of benzyl alcohol to benzaldehyde. Here, we report a detailed computational investigation of these VO x -incorporated MOF catalysts (V-MOF) by employing density functional theory. Based on the mode of VO x attachment, various structures are explored, and their relative stabilities and computed IR spectral features are reported. Mechanisms for the selective oxidation reaction are investigated. The analysis of electron flow in the turnover-limiting C–H activation step shows that the hydrogen-atom abstraction process involves a concerted proton-coupled electron-transfer mechanism. Here, the results of this study suggest that in addition to the identity of the metal in the node, the MOF node architecture plays a crucial role in driving the catalytic activities of V-MOFs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

ARES I: WASP-76 b, A Tale of Two HST Spectra

We analyze the transmission and emission spectra of the ultra-hot Jupiter WASP-76 b, observed with the G141 grism of the Hubble Space Telescope’s (HST) Wide Field Camera 3 (WFC3). We reduce and fit the raw data for each observation using the open-source software Iraclis before performing a fully Bayesian retrieval using the publicly available analysis suite TauREx 3. Previous studies of the WFC3 transmission spectra of WASP-76 b found hints of titanium oxide (TiO) and vanadium oxide (VO) or non-gray clouds. Accounting for a fainter stellar companion to WASP-76, we reanalyze this data and show that removing the effects of this background star changes the slope of the spectrum, resulting in these visible absorbers no longer being detected, eliminating the need for a non-gray cloud model to adequately fit the data but maintaining the strong water feature previously seen. However, our analysis of the emission spectrum suggests the presence of TiO and an atmospheric thermal inversion, along with a significant amount of water. Given the brightness of the host star and the size of the atmospheric features, WASP-76 b is an excellent target for further characterization with HST, or with future facilities, to better understand the nature of its atmosphere, to confirm the presence of TiO and to search for other optical absorbers.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

A nanoscale photonic thermal transistor for sub-second heat flow switching

Abstract Control of heat flow is critical for thermal logic devices and thermal management and has been explored theoretically. However, experimental progress on active control of heat flow has been limited. Here, we describe a nanoscale radiative thermal transistor that comprises of a hot source and a cold drain (both are ~250 nm-thick silicon nitride membranes), which are analogous to the source and drain electrodes of a transistor. The source and drain are in close proximity to a vanadium oxide (VO x )-based planar gate electrode, whose dielectric properties can be adjusted by changing its temperature. We demonstrate that when the gate is located close ( < ~1 µm) to the source-drain device and undergoes a metal-insulator transition, the radiative heat transfer between the source and drain can be changed by a factor of three. More importantly, our nanomembrane-based thermal transistor features fast switching times ( ~ 500 ms as opposed to minutes for past three-terminal thermal transistors) due to its small thermal mass. Our experiments are supported by detailed calculations that highlight the mechanism of thermal modulation. We anticipate that the advances reported here will open new opportunities for designing thermal circuits or thermal logic devices for advanced thermal management.

42 ENGINEERING↗
DOE OSTI2020

Vanadium oxide coatings to self-regulate current sharing in high-temperature superconducting cables and magnets

High-temperature superconductors such as REBa 2 Cu 3 O 7-δ (REBCO, RE = rare earth) enable high-current cables and high-field magnets. By removing the turn-to-turn insulation in a magnet application, recent experiments demonstrated that REBCO magnets can self-protect against catastrophic damage during a superconducting-to-normal transition (quench), i.e., when the stored magnetic energy rapidly converts to heat. The current can bypass the hot spot during a quench, thereby reducing the localized heat dissipation. The removal of the insulation between turns, however, leads to excessive eddy currents during current ramping, thereby forcing a much-prolonged magnet charging time. To address this issue, we investigate vanadium oxide (VO x ) coatings as a temperature-dependent self-switching medium that automatically manages current sharing. VO x coatings (with 1.70 ≤ × ≤ to 2.07) were deposited by reactive cathodic arc deposition, initially on insulating glass to determine the electrical properties, and later on commercial REBCO tapes. The coatings are x-ray amorphous but with a short-range crystalline ordering according to Raman spectrometry. The resistivity of VO x decreased by at least three orders of magnitude when the temperature increased from 80 to 300 K. The coating process is compatible with commercial REBCO tapes as evidenced by the negligible change in the critical current caused by the coating process. Here, the results from current sharing experiments and circuit analysis suggest that the VO x coating can effectively self-regulate current sharing in REBCO magnets, suppress excessive eddy currents, and enable self-protection during quenches.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons

We report on switching dynamics of individual and coupled vanadium dioxide (VO 2 ) devices subject to voltage pulses as the temperature is systematically varied from room temperature spanning the insulator–metal transition (IMT) temperature. The switching voltage of single devices has a strong relationship with both temperature and voltage pulsewidth. Two-step switching in connected VO 2 devices has been noted in current transient plots and was found to depend on temperature, pulsewidth, and pulse amplitude. Experimental switching behavior measured from VO 2 artificial neurons was implemented into a spiking neural network (SNN). During training, modulating the switching voltage via temperature affords a novel method to implement homeostasis with the coupled devices. Simulation results show the efficacy of the stochastic neuronal characteristics and the proposed homeostasis mechanism on a standard digit recognition task. As a result, these studies contribute to ongoing efforts in neuromorphic computing exploiting collective phase transitions.

42 ENGINEERING↗
DOE OSTI2020

Elastocaloric effect in vanadium (IV) oxide

Elastocaloric cooling utilizes the latent heat associated with stress-induced reversible phase transformations to achieve cooling. Currently, the key barrier to this technology is its prohibitive cost due to the high elastocaloric material cost and the large stress required to drive the cooling cycle. Vanadium (IV) oxide (VO 2 ) is a good candidate, and it is relatively cheap. Our calorimetry study shows it exhibits a reversible phase transformation with a large latent heat of 31.5 J/g, as well as excellent functional stability. Its transformation temperature and latent heat are tunable via heat treatment. We demonstrated that VO 2 powders can be cyclically compressed in a steel tube using a steel plunger to drive the elastocaloric effect. The application of relatively low stress of 300 MPa is sufficient to result in a reversible temperature change of 0.5 °C on the powder compact. Further improvement of reversible temperature change to 1.6 °C under 300MPa is achieved by adding conductive copper powders. Future efforts should focus on improving material properties such as heat capacity and thermal conductivity for candidate ceramic oxides to maximize elastocaloric effects.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Final Technical Report on Investigation of Short-range Ordering in Transition Metal Compounds by Diffuse Scattering

Future energy needs and sustainability require new materials with novel properties for such applications as energy production, storage and transport and microelectronics. Quantum materials with several competing interactions at the electronic level offer tremendous opportunity to discover, design and tune properties for such applications. Although it has been recognized that small deviations in atomic positions, driven by the competing electronic interactions, in crystalline materials can have significant impact on properties, it remains a challenge to accurately characterize such deviations (short-range order) due to the lack of advanced instruments and analysis tools to characterize them. This project used the powerful neutron and x-ray scattering instruments recently developed at the DOE user facilities to address this challenge. New methods and efficient analysis tools were employed to uncover the hidden ordering that is behind the unique properties of transition metal compounds. One example of hidden order revealed by this project comes from vanadium (IV) oxide (VO 2 ) and related compounds. The project found that the chemical bonds in VO 2 compete against each other, unlike most crystalline compounds where the chemical bonds cooperate to yield the ordered structure. This helps explain why different measurements yielded different, competing pictures about the nature of VO 2 , which has led to disagreement about where its physical properties come from. Another example from this project of hidden ordering comes from a class of compounds known as condensed Chevrel phases, which are superconducting compounds that are generally believed to be non-magnetic. The neutron scattering methods used in this project revealed evidence of magnetism, which usually does not coexist with superconductivity. In this case, magnetism is believed to be one part of a special type of electronic behavior that can occur in compounds that have one-dimensional bonding character.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effect of substrate and growth method on vanadium dioxide thin films by RF magnetron sputtering: Vanadium metal oxidation vs reactive sputtering

Vanadium dioxide (VO 2 ) undergoes a metal–insulator phase transition at ~70 °C and has attracted substantial interest for potential applications in electronics, including those in neuromorphic computing. The vanadium–oxygen system has a rather complicated phase diagram, and controlling the stoichiometry and the phase of thin films of vanadium oxides is a well-known challenge. Here, we explore the novel combination of two methods of VO 2 thin film deposition using off-axis RF magnetron sputtering on (100)- and (111)-oriented yttria-stabilized zirconia (YSZ) substrates: reactive sputtering of vanadium in an oxygen environment and sputtering of vanadium metal followed by oxidation to VO 2 . Interestingly, the reactive sputtering process on both substrate orientations yields the metastable semiconducting VO 2 (B) phase, which is structurally stabilized by the YSZ surface. The metal sputtering and oxidation process on YSZ produces mainly the equilibrium monoclinic (or M1) phase of VO 2 that exhibits a metal–insulator transition. Using this method, we obtained thin films of (010)-textured polycrystalline VO 2 (M1) that show a metal–insulator transition with an on/off ratio larger than 1000.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Synthetic methods for crystallite size control of bimetallic polyanionic battery compositions

Bimetallic polyanionic materials, such as silver vanadium phosphorus oxide (Ag 2 VO 2 PO 4 , SVOP), are promising cathode materials for Li batteries due in part to their large capacity and high current capability. A new synthesis of Ag 2 VO 2 PO 4 based on microwave heating is disclosed, where the reaction time is reduced by approximately 100 times relative to other reported methods, and the crystallite size is controlled via synthesis temperature, showing a linear positive correlation of crystallite size with temperature. Reaction times of an hour or less are sufficient to render phase-pure material after reaction at 50° C. to 180° C., significantly lower than the temperatures reported for other methods. Crystallite sizes between 42 nm and 60 nm are achieved by the novel method, smaller than by other methods. Silver/vanadium atomic ratios of 1.96 to 2.04 in the as-synthesized SVOP result and appear temperature-dependent. Notably, under galvanostatic reduction, the Ag 2 VO 2 PO 4 sample with the smallest crystallite size delivers the highest capacity and shows the highest loaded voltage.

Takeuchi, Kenneth J.↗
DOE OSTI2025

Ultrathin VO 2 Films on Functional Substrates

The metal–insulator transition (MIT) in vanadium dioxide (VO 2 ) thin films is strongly affected by grain size, thickness, and interfacial properties. Typically, a minimum thickness around 50 nm is required for VO 2 to exhibit a significant MIT when functional substrates like sapphire and silicon are used. Several works have shown that thin films below 20 nm, with up to 2–3 decades of change in the resistance across the MIT, can be achieved but require complex pre- or postprocessing of the samples. We show that predeposition substrate condition control facilitates the direct growth of VO 2 ultrathin 15 nm films, exhibiting a resistance change between 3 and 4 decades across the MIT. Our findings indicate that the interface between the film and the substrate is crucial in determining the initial growth layers and the structural evolution. With appropriate substrate surface treatment, the desired VO 2 MIT can be enhanced regardless of the substrate crystallographic orientation. Moreover, we propose a novel approach to obtain large resistance changes across the MIT in ultrathin VO 2 films by incorporating a predeposited 1.5 nm vanadium oxide buffer layer, thereby eliminating the need to use different materials or complex pre- or postprocessing of the samples. Here we also demonstrate that this method improves the transition of 25–50 nm VO 2 thin films on silicon substrates. Our study reveals a simple approach for direct growth of ultrathin VO 2 films exhibiting a significant MIT, which is commonly accepted unattainable over substrates of technological importance, such as sapphire and silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Oxidation mechanism in a refractory multiple-principal-element alloy at high temperature

Refractory multiple-principal-element alloys (RMPEAs) are promising structural materials to enable increased power efficiency in high-temperature oxidation environments, but the oxidation behavior and microstructures of the oxides, especially at the beginning of the oxidation, have received limited attention. Here, the oxidation mechanism in an equimolar W-Mo-Ta-Nb-V was investigated at 1300 °C and compared with the equimolar W-Mo-Ta-Nb alloy without V. The oxide scale on WMoTaNbV after 1 min exposure is shown to be composed of a degradation layer at the interface of the alloy/oxide, an initial oxide transition layer, followed by the main phase aggregate oxide layer, and an outermost oxide layer. At the early stage of oxidation, the absorption of oxygen by the RMPEA substrate forms a solid solution. Vanadium accelerates the initial degradation process as it forms VO. The initial oxidation-induced degradation of RMPEA follows a sequence governed by the free energy change accompanied by local element segregation. Liquid V-Mo oxides aggregate in the intermediate oxide layer. The inward growth of the oxide scale is controlled by the local composition changes, the orientation of the substrate, the crystal structure, and physical properties such as melting points of the oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tunable 3D Aerosol Jet Printing of Low‐Power Redox‐Gated Transistors with Multicomponent Inks

Printed hybrid electronics (PHE) offer a promising alternative for microelectronics fabrication, addressing some limitations of traditional subtractive manufacturing. Despite the versatility of PHE, particularly in the customization of printing inks, these devices have not yet matched the performance of silicon-based electronics due to challenges in gating mechanisms and operational stability. However, the potential of low-voltage redox-gating to achieve significant carrier modulations in correlated metal oxides remains unexplored in PHE. This study systematically investigates vanadium dioxide (VO 2 ) nanoparticles and redox inks, linking their organization in solution to their morphology, phase state, and properties in solid films and multilayered structures. Using an aerosol jet printer (AJP), a solid-state VO 2 transistor is fabricated, operating at just 0.4 V gating voltage. The printed VO 2 films demonstrate redox-modulated conductivity and consistent transistor behavior. The solid-state redox gating materials also provide long-term stability, with the device maintaining performance over 6000 cycles without degradation. These results highlight the potential of redox gating to enhance the application of functional nanoparticles in printed hybrid microelectronics, especially for flexible, low-voltage, and energy-efficient devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Laser-induced selective local patterning of vanadium oxide phases

The same elements can form different compounds with widely different physical properties. Synthesis of a single-phase material is commonly achieved by controlling experimental conditions. Synthesizing materials that incorporate multiple specific spatially distributed chemical phases is often challenging, especially if different phases must be organized into well-defined spatial patterns. Here, we present an efficient solid reaction laser annealing (SRLA) approach to directly write regions of different local chemical compositions. We demonstrate the practical utility of our approach by locally writing microscale patterns of distinct chemical phases in vanadium oxide thin films. Specifically, we achieved the controlled local recrystallization of a uniform V 2 O 3 matrix into VO 2 , V 3 O 5 , and V 4 O 7 regions exhibiting sharp 1st- and 2nd-order metal–insulator phase transitions over a wide range of critical temperatures, i.e., a characteristic feature of select vanadium oxides that is extremely sensitive to even minute structural or compositional imperfections. We utilized the local chemical phase writing to pattern spiking oscillators with distinct electrical behavior directly in the thin film sample without employing elaborate lithography fabrication. Our laser tuning local chemical composition opens a pathway to synthesize a wide range of artificially micropatterned composite materials, with precision and control unattainable in conventional material synthesis methods.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Harnessing the Second-Order Metal−Insulator Transition for Neuromorphic Computing

Vanadium oxides are widely studied phase change materials for brain-inspired computing architectures. Systems like VO 2 and V 2 O 3 exhibit first-order metal−insulator transitions (MITs) with hysteresis and percolative switching, increasing stochasticity and device variability. Here, we focus on the less explored Magnéli phase V 4 O 7 , which undergoes a continuous, non-hysteretic, second-order MIT. This surprisingly enables highly reproducible volatile resistive switching in spiking-neuron-type devices. We synthesize V 4 O 7 films, characterize their structural and transport properties, and demonstrate voltage and current-driven threshold switching with electrothermal feedback. In a Pearson–Anson oscillator, V 4 O 7 devices produce stable, tunable spiking across 20–200 kHz, with consistent operation among multiple devices. We introduce a numerical analog leaky-integrate-and-fire (aLIF) model that captures waveform shapes and their dependence on load resistance, temperature, and voltage. Furthermore, these findings suggest that second-order MIT materials like V 4 O 7 are promising for deterministic, scalable spiking neuron arrays for neuromorphic computing.

V4O7↗