DOE OSTI · 1961583
Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons
Abstract
We report on switching dynamics of individual and coupled vanadium dioxide (VO 2 ) devices subject to voltage pulses as the temperature is systematically varied from room temperature spanning the insulator–metal transition (IMT) temperature. The switching voltage of single devices has a strong relationship with both temperature and voltage pulsewidth. Two-step switching in connected VO 2 devices has been noted in current transient plots and was found to depend on temperature, pulsewidth, and pulse amplitude. Experimental switching behavior measured from VO 2 artificial neurons was implemented into a spiking neural network (SNN). During training, modulating the switching voltage via temperature affords a novel method to implement homeostasis with the coupled devices. Simulation results show the efficacy of the stochastic neuronal characteristics and the proposed homeostasis mechanism on a standard digit recognition task. As a result, these studies contribute to ongoing efforts in neuromorphic computing exploiting collective phase transitions.
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Yu, Haoming, Islam, A. N. M. Nafiul, Mondal, Sandip, Sengupta, Abhronil, Ramanathan, Shriram. 2022-04-29. Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons. https://doi.org/10.1109/ted.2022.3168248
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