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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Fast, Accurate, and Reliable Thermal Metrology to Assess the Thermal Resistivity on Small Samples of Thermal Insulation

Developing new insulation materials having a thermal resistivity greater than 69 m K/W (10 hr ft2 °F/Btu/inch) can be appealing for building envelope retrofit and construction of new buildings. Multiple institutions are involved in the development of innovative insulation materials with high thermal resistivity. However, these projects have struggled in the development of new materials due to the difficulty associated with the measurement of small sections of high thermal resistivity materials. As new materials are being developed, the size of each test specimen impacts the cost of development. Given the lack of a reliable method to measure the thermal resistivity on small samples of such materials, we evaluated experimental techniques that can be improved to satisfy the need for testing small sections of high thermal resistivity materials and developed standardized test methods to enable the rapid thermal evaluation of advanced insulation materials. This paper presents the study results and potential techniques for fast, accurate, and reliable effective thermal resistivity measurement on small samples of insulation materials.

Desjarlais, Andre Omer↗
DOE OSTI2024

Nanoscale Imaging and Measurements of Grain Boundary Thermal Resistance in Ceramics with Scanning Thermal Wave Microscopy

Material thermal conductivity is a key factor in various applications, from thermal management to energy harvesting. With microstructure engineering being a widely used method for customizing material properties, including thermal properties, understanding and controlling the role of extended phonon-scattering defects, like grain boundaries, is crucial for efficient material design. However, systematic studies are still lacking primarily due to limited tools. In this study, we demonstrate an approach for measuring grain boundary thermal resistance by probing the propagation of thermal waves across grain boundaries with a temperature-sensitive scanning probe. The method, implemented with a spatial resolution of about 100 nm on finely grained Nb-substituted SrTiO 3 ceramics, achieves a detectability of about 2 × 10 –8 K m 2 W –1 , suitable for chalcogenide-based thermoelectrics. The measurements indicated that the thermal resistance of the majority of grain boundaries in the STiO 3 ceramics is below this value. While there are challenges in improving sensitivity, considering spatial resolution and the amount of material involved in the detection, the sensitivity of the scanning probe method is comparable to that of optical thermoreflectance techniques, and the method opens up an avenue to characterize thermal resistance at the level of single grain boundaries and domain walls in a spectrum of microstructured materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Measuring the maximum capacity and thermal resistances in phase-change thermal storage devices

Thermal energy storage can increase the efficiency of the electric grid by adding flexibility to thermal systems. The value of thermal storage is a function of its energy and power density, which are driven by the capacity and thermal resistances in the storage device. Measuring these properties in-situ at the device level is an important step to understanding the performance and improving the design of thermal storage systems. Here, we present methods to measure the total capacity and thermal resistances in heat exchangers with integrated phase change materials. These methods are demonstrated on two thermal storage devices - a 570-kWh ice-based storage tank and a 0.35-kWh graphite-tetradecane composite device. The results show how thermal resistances evolve with the state of charge and discharge rate in these devices and quantify the impact of applied pressure on the contact resistance in composite phase change material heat exchangers. The proposed method allows for easy comparison between different systems and provides information on the thermal bottlenecks limiting performance. Ultimately, these measurements will allow designers to make robust, high-performance thermal storage devices for next-generation thermal systems.

25 ENERGY STORAGE↗
DOE OSTI2020

The Role of Interfacial Thermal Resistance in Li-Ion Battery Thermal Management: Preprint

Temperature critically affects the performance, life and safety of lithium-ion batteries. Therefore, it is essential to understand heat generation and dissipation within individual battery cells and battery packs to plan a proper thermal management strategy. One of the key challenges is that interfacial heat transfer of a battery unit is difficult to quantify. The steady-state absolute method and the transient laser-flash-diffusivity method were employed to measure heat conductivities of battery layer stacks and individual battery layer separately. Results show flash diffusivity method gives higher thermal conductivity at both cross-plane and in-plane directions. The difference is primarily caused by interfacial thermal resistance so that it can be estimated by steady-state and transient measurements. To investigate the effects of interfacial thermal transport beyond individual cell level, a multiphysics battery model is used. The model is built upon a multi-scale multi-domain modeling framework for battery packs that accounts for the interplay across multiple physical phenomena. Benefits of a battery module using thermal management materials are quantified through numerical experiments. During a thermal runaway event, it is found interfacial thermal resistance can mitigate thermal runaway in a battery module by significantly reducing heat transfer between cells.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Design and Fabrication of Polyisocyanurate Foams toward Significantly Enhanced Thermal Resistivity

Developing high-performance thermal insulation is vital for addressing the ongoing global demand for reduced energy costs. Polyisocyanurate (PIR) foams are commonly used in residential and commercial buildings and in various industrial applications owing to their relatively high thermal insulation properties and fire resistivity. Here, this study aims to further improve the thermal resistivity of PIR foams by (1) incorporating low thermal conductivity blowing agents; (2) tailoring the anisotropy of their cells; (3) tuning polymeric isocyanate quantities; and (4) incorporating a facer barrier, while using steps that easily integrate into current manufacturing processes for PIR foams. The resulting PIR foams exhibit a significant enhancement in thermal resistivity, achieving initial values as high as 8.3 h·ft 2 ·°F/Btu/in., commonly abbreviated as R-8.3/in., which is a 20% improvement compared with that of commercially used PIR foams that achieve approximately R-7/in. The detailed analysis of thermal conductivity measurements, mechanical testing, and morphological characterization elucidates the structure–property relationships. The developed high-performance PIR foams provide a critical pillar for next-generation high-performance insulation, offering promising thermal insulation for buildings and many other applications that have a significant effect on global energy costs.

Anisotropic pores↗
DOE OSTI2022

An atomistic model for the thermal resistance of a liquid–solid interface

The thermal resistance associated with the interface between a solid and a liquid is analysed from an atomistic point of view. Partial evaluation of the associated Green–Kubo integral elucidates the various factors governing heat transport across the interface and leads to a quantitative model for the thermal resistance in terms of atomistic-level system parameters. The model is validated using molecular dynamics simulations.

Mechanics↗
DOE OSTI2026

Ultra-low thermal resistance and pressure drop copper and copper-tungsten diamond-shaped pin fin cold plates for liquid cooling of electronics

Modern and future data centers face increasing cooling challenges due to increasing chip thermal design power and die size, along with the need to reduce energy consumption used for cooling. High performance cooling solutions that maintain a low chip junction temperature are needed to ensure electronics reliability. This work develops an ultra-low thermal resistance and low pressure drop 75 mm × 75 mm cold plate, intended for next-generation electronics cooling. The cold plate features an array of diamond-shaped pin fins and integrated copper tungsten heat spreader, selected for its low coefficient of thermal expansion which reduces thermomechanical deformation and allows for closer integration of the cold plate with silicon dies. Starting with 300 candidate designs, three-dimensional computational fluid dynamics simulations predict the thermal-hydraulic performance of cold plate subsections. The highest performing geometries are evaluated with high fidelity simulations. Four cold plates are manufactured for experiments: three with diamond-shaped pin fins and one with straights fins for comparison purposes. The cold plates are fabricated from copper-tungsten (CuW), copper (Cu), or aluminum-silicon-magnesium alloy (AlSi10Mg). The diamond-shaped pin fins achieve a roughly 15 % lower thermal resistance compared to the conventional straight fin microchannel. The highest performing design achieves a chip-to-coolant (including thermal interface material) thermal resistance of 9.0 K/kW in CuW and 6.9 K/kW in Cu under a 1 kW heat load with an inlet-to-outlet pressure drop of 9.0 kPa and water as the working fluid. This work demonstrates ultra-low thermal resistance and pressure drop cold plates for large die, high heat load applications, and shows that CuW is an attractive cold plate material for improved reliability in next generation data center cooling.

Coefficient of thermal expansion↗
DOE OSTI2020

Complexion dictated thermal resistance with interface density in reactive metal multilayers

Multilayers composed of aluminum (A1) and platinum (Pt) exhibit a non-monotonic trend in thermal resistance with bilayer thickness as measured by time domain thermoreflectance. The thermal resistance initially increases with reduced bilayer thickness only to reach a maximum and then decrease with further shrinking of the multilayer period. These observations are attributed to the evolving impact of an intermixed amorphous complexion approximately 10 nm in thickness, which forms at each boundary between Al- and Pt-rich layers. Scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy find that the elemental composition of the complexion varies based on bilayer periodicity as does the fraction of the multilayer composed of this interlayer. These variations in complexion mitigate boundary scattering within the multilayers as shown by electronic transport calculations employing density functional theory and non-equilibrium Green's functions on amorphous structures obtained via finite temperature molecular dynamics. The lessening of boundary scattering reduces the total resistance to thermal transport leading to the observed non-monotonic trend thereby highlighting the central role of complexion on thermal transport within reactive metal multilayers.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Identification and characterization of the dominant thermal resistance in lithium-ion batteries using operando 3-omega sensors

Poor thermal transport within lithium-ion batteries fundamentally limits their performance, safety, and lifetime, in spite of external thermal management systems. All prior efforts to understand the origin of batteries' mysteriously high thermal resistance have been confined to ex situ measurements without understanding the impact of battery operation. Here, we develop a frequency-domain technique that employs sensors capable of measuring spatially resolved intrinsic thermal transport properties within a live battery while it is undergoing cycling. Our results reveal that the poor battery thermal transport is due to high thermal contact resistance between the separator and both electrode layers and worsens as a result of formation cycling, degrading total battery thermal transport by up to 70%. We develop a thermal model of these contact resistances to explain their origin. These contacts account for up to 65% of the total thermal resistance inside the battery, leading to far-reaching consequences for the thermal design of batteries. Finally, our technique unlocks new thermal measurement capabilities for future battery research.

25 ENERGY STORAGE↗
DOE OSTI2021

Low Thermal Resistance (0.5 K/W) Ga 2 O 3 Schottky Rectifiers With Double-Side Packaging

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance (R θJC ) in the bottom-side- and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction- and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. Here, the R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

42 ENGINEERING↗
DOE OSTI2023

Time-Resolved Structural Measurement of Thermal Resistance across a Buried Semiconductor Heterostructure Interface

The precise control and understanding of heat flow in heterostructures is pivotal for advancements in thermoelectric energy conversion, thermal barrier coatings, and efficient heat management in electronic and optoelectronic devices. In this study, we employ high-angular-resolution time-resolved X-ray diffraction to structurally measure thermal resistance in a laser-excited AlGaAs/GaAs semiconductor heterostructure. Our methodology offers femtometer-scale spatial sensitivity and nanosecond time resolution, enabling us to directly observe heat transport across a buried interface. We corroborate established Thermal Boundary Resistance (TBR) values for AlGaAs/GaAs heterostructures and demonstrate that TBR arises from material property discrepancies on either side of a nearly flawless atomic interface. This work not only sheds light on the fundamental mechanisms governing heat flow across buried interfaces but also presents a robust experimental framework that can be extended to other heterostructure systems, paving the way for optimized thermal management in next-generation devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Integral Heat Transfer Test Method for Determining Thermal Resistance of Silicon Carbide Cladding and Liquid Tin System at Elevated Temperatures - Master's Thesis Presentation University of Idaho

Presentation for master's work at University of Idaho discussing Integral Heat Transfer Test Method for Determining Thermal Resistance of Silicon Carbide Cladding and Liquid Tin System at Elevated Temperatures. Presentation covers slight literature review results/previous work, discussions on system design and approach for thermal property measurement of SiC composite and Tin system, modeling efforts, and results.

36 - MATERIALS SCIENCE↗
DOE OSTI2025

Measurement of interfacial thermal resistance in high-energy-density matter

Heat transport across interfaces is a ubiquitous phenomenon with many unresolved aspects. In particular, it is unknown if an interfacial thermal resistance (ITR) occurs in matter with high-energy-density where free electrons dominate the heat conduction. Here, we report on the first experimental evidence that a significant heat barrier is present between two different regions of high-energy-density matter: a strongly heated tungsten wire and a surrounding plastic layer that stays relatively cold. We use diffraction-enhanced imaging to track the time evolution of density discontinuities and reconstruct the temperature evolution in the quasi-stationary stage. The clear signatures of a temperature jump demonstrate the importance of the ITR for strongly heated systems with far-reaching implications for interpreting experiments and applications like inertial confinement fusion.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Enhancing The Thermal Resistivity of Rigid Polyisocyanurate Foam Insulation

The development of rigid polyurethane foam insulation has garnered considerable attention because of its promising applications in the buildings and construction industry. Its low thermal conductivity makes it an attractive choice for improving energy performance in buildings. Current Rigid Polyurethane foams have thermal resistivity (R-value/in.) 5.5 to 6.5 h.ft2F/BTU/in.· that could be further improved by diminishing the heat transfer through the foam matrix. Nevertheless, minimizing both conduction (through gas and solid) and radiation simultaneously in porous solids is a significant challenge due to the trade-off between these two mechanisms. This study focuses on improving the R-value of the insulation foams via several strategies: such as type and the amount of the surfactants, blowing agent content and precooling and premixing polyol mixture. These methods optimized thermal properties of the PIR foams, achieving R/in. as high as 8.3. This excellent R/in. is anticipated to be a critical factor in significantly advancing the thermal insulation performance of rigid polyurethane cellular foams, thereby enhancing their efficacy in energy-efficient building applications.

Wanasinghe Mudiyanselage Pahala Gedara, Shiwanka V↗
DOE OSTI2025

Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration

We report back-end-of-line growth of nanocrystalline diamond (NCD) on ultrawide bandgap (UWBG) high Al content aluminum gallium nitride (AlGaN) channel high electron mobility transistors for thermal management. A thin (∼15 nm) silicon nitride (SiN x ) interlayer was deposited to protect the device surface before performing a low temperature (500 °C) NCD growth process in an attempt to protect the gates on these fully fabricated devices. Notably, atomic force microscopy showed that the maximum lateral grain size exceeded 300 nm even though the film thickness was ∼250 nm. Comparing electrical (DC) performance before and after NCD growth, the gate leakage increased by ∼10 2 after NCD growth. Despite the lower NCD growth temperature, intermixing of the Ni and Au was observed in the Schottky gate metal stack; however, we believe there is another mechanism, possibly hydrogen-related, that is responsible for the measured increase in gate leakage. Regarding thermal management, the device-level thermal resistance (quantified using the average gate temperature rise measured by thermoreflectance imaging) was reduced by 29% through the incorporation of the top-side diamond film. Using time-domain thermoreflectance, the thermal conductivity of the ≈250 nm thick NCD film was measured to be 45 ± 25 W m −1 K −1 . This is expected to be at least 5× greater than the thermal conductivity of the thin disordered AlGaN alloy. There could also be a coupled electrothermal component contributing to the reduced temperature rise from electric field spreading and consequent heat spreading. This study demonstrates a promising first step toward device-level thermal management of high power UWBG Al-rich AlGaN devices.

Lundh, James Spencer [U.S. Naval Research Laborato↗
DOE OSTI2023

Impact- and Thermal-Resistant Epoxy Resin Toughened with Acacia Honey

High performance polymers with bio-based modifiers are promising materials in terms of applications and environmental impact. In this work, raw acacia honey was used as a bio-modifier for epoxy resin, as a rich source of functional groups. The addition of honey resulted in the formation of highly stable structures that were observed in scanning electron microscopy images as separate phases at the fracture surface, which were involved in the toughening of the resin. Structural changes were investigated, revealing the formation of a new aldehyde carbonyl group. Thermal analysis confirmed the formation of products that were stable up to 600 °C, with a glass transition temperature of 228 °C. An energy-controlled impact test was performed to compare the absorbed impact energy of bio-modified epoxy containing different amounts of honey with unmodified epoxy resin. The results showed that bio-modified epoxy resin with 3 wt% of acacia honey could withstand several impacts with full recovery, while unmodified epoxy resin broke at first impact. The absorbed energy at first impact was 2.5 times higher for bio-modified epoxy resin than it was for unmodified epoxy resin. In this manner, by using simple preparation and a raw material that is abundant in nature, a novel epoxy with high thermal and impact resistance was obtained, opening a path for further research in this field.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Hydrophobic Lightweight Cement with Thermal Shock Resistance and Thermal Insulating Properties for Energy-Storage Geothermal Well Systems

This study assessed the possibility of using polymethylhydrosiloxane (PMHS)-treated fly ash cenospheres (FCS) for formulating a thermally insulating and thermal shock (TS)-resistant cementitious blend with calcium aluminate cement. To prevent FCS degradation in an alkaline cement environment at high temperatures, the cenospheres were pre-treated with sodium metasilicate to form silanol and aluminol groups on their surface. These groups participated in a dehydrogenation reaction with the functional ≡Si–H groups within PMHS with the formation of siloxane oxygen-linked M-FCS (M: Al or Si). At high hydrothermal temperatures of 175 and 250 °C, some Si–O–Si and SiCH 3 bonds ruptured, causing depolymerization of the polymer at the FCS surface and hydroxylation of the raptured sites with the formation of silanol groups. Repolymerization through self-condensation between the silanol groups followed, resulting in the transformation of siloxane to low crosslinked silicon-like polymer as a repolymerization-induced product (RIP) without carbon. The RIP provided adequate protection of FCS from pozzolanic reactions (PR), which was confirmed by the decline in zeolites as the products of PR of FCS. Cements with PMHS-treated FCS withstood both hydrothermal and thermal temperature of 250 °C in TS tests, and they also showed improved compressive strength, toughness, and water repellency as well as decreased thermal conductivity. The lubricating properties of PMHS increased the fluidity of lightweight slurries.

15 GEOTHERMAL ENERGY↗
DOE OSTI2020

Non-thermal resistive switching in Mott insulator nanowires

Abstract Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO 2 and V 2 O 3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO 2 and V 2 O 3 , suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗