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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Different Damp-Heat-Induced Series Resistance Degradation Behaviors in Fielded Crystalline Silicon Photovoltaic Modules Due to Difference in Bill of Materials

This case study investigates mono-crystalline silicon modules from underperforming portions of a utility-scale photovoltaic power plant. Field-collected I-V curves and electroluminescence imaging suggested that increased series resistance was a primary factor driving module degradation. Selected modules were removed from the field for further analysis, including incremental damp heat accelerated testing, which confirmed a progression in series resistance degradation. Two distinct cell degradation behaviors became apparent during the investigation. Cross-sectional scanning electron microscopy (with elemental analysis) and scanning spreading resistance microscopy identified key differences between the two degradation mechanisms, primarily grid finger width and contact resistance. Additionally, the study highlights the reliability implications of retest requirements in International Electrotechnical Commission 61215 for material changes and how they may have mitigated the degradation observed at this site.

14 SOLAR ENERGY↗
DOE OSTI2025

High-Intensity UV Exposure for the Rapid Screening of Silicon Photovoltaic Architectures

Advanced Si photovoltaic architectures incorporate different materials and processing pathways that influence degradation modes. Ultraviolet-induced degradation (UVID) is an understudied degradation mode for advanced cell architectures and is of increasing concern to industry due to growing adoption of UV-transparent encapsulation and bifacial technologies. In order to adopt new and evolving technologies confidently, novel component materials and processing techniques must be evaluated and designed for long-term stability, in addition to the conventional design focus on efficiency. In this work, a study protocol framework is presented for the rapid screening of unencapsulated devices against UVID. Unencapsulated passivated emitter rear contact (PERC) and tunnel oxide passivated contact (TOPCon) devices were aged under different UV irradiance intensities and measured via conventional nondestructive electrical characterization methods to assess performance degradation. Based on the results, protocol efficacy and recommendations for further study are discussed. As a result, this work is part of a broader effort to develop rapid screening processes that cut across architectures and exposure conditions to aid module manufacturers in vetting new materials choices for long-term stability.

Accelerated exposure↗
DOE OSTI2025

Aqueous-based recycling of perovskite photovoltaics

Abstract Cumulative silicon photovoltaic (PV) waste highlights the importance of considering waste recycling before the commercialization of emerging PV technologies 1,2 . Perovskite PVs are a promising next-generation technology 3 , in which recycling their end-of-life waste can reduce the toxic waste and retain resources 4,5 . Here we report a low-cost, green-solvent-based holistic recycling strategy to restore all valuable components from perovskite PV waste. We develop an efficient aqueous-based perovskite recycling approach that can also rejuvenate degraded perovskites. We further extend the scope of recycling to charge-transport layers, substrates, cover glasses and metal electrodes. After repeated degradation–recycling processes, the recycled devices show similar efficiency and stability compared with the fresh devices. Our holistic recycling strategy reduces by 96.6% resource depletion and by 68.8% human toxicity (cancer effects) impacts associated with perovskite PVs compared with the landfill treatment. With recycling, the levelized cost of electricity also decreases for both utility-scale and residential systems. This study highlights unique opportunities of perovskite PVs for holistic recycling and paves the way for a sustainable perovskite solar economy.

Science & Technology - Other Topics↗
DOE OSTI2025

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗
DOE OSTI2026

UV-Induced Degradation and Associated Metastability in TOPCon Photovoltaic Modules: Understanding Kinetics and Cell Variance

Tunnel oxide passivated contact (TOPCon) silicon photovoltaic (PV) modules are dominating the PV market, but they may be susceptible to degradation under ultraviolet (UV)-containing light. Quantifying the impacts of UV-induced degradation (UVID) is complicated by an associated metastability causing further degradation under dark storage and rapid recovery under sunlight. Here, we study modules that have -2.3% to -3.2% nonrecoverable UVID loss after 60 kWh/m2 dose of 340 nm light and additional recoverable loss under dark storage. We use in situ electroluminescence (EL) imaging to characterize the post-UVID metastability at the module level. The cell-by-cell dark degradation and recovery kinetics span a wide range from +6% to -70% changes in EL intensity after 520 h of dark storage, which returns to +- 4% of the initial post-UVID EL intensity after illumination. The kinetics follow double exponential rates with dark storage degradation time constants of 345 and 45 h, and UV light recovery time constants of 5 min and 36 s. We propose that this is consistent with prior reports of kinetics for light-soaking metastability in Al2O3 passivation. Finally, we further show that cells having high UVID also have injection-dependent effective carrier lifetimes and significant intra-cell variance, suggesting possible origins of processing inconsistency.

14 SOLAR ENERGY↗
DOE OSTI2025

Low embodied energy and carbon, high lifetime silicon boules via a combined chemical vapor deposition/float zone process

This work evaluates a new process route to making float zone (Fz)-quality silicon wafers using a combination of computational fluid dynamics (CFD) modeling and technoeconomic analysis. Our analysis finds that the new process competes with Czochralski (Cz)-grown wafers on a levelized cost of energy system level. The new process also decreases embodied energy and carbon of silicon photovoltaics (PV) by ~6x circumventing the energy-costly Siemens process used in polycrystalline silicon (poly-Si) production plants to generate feedstock for Fz and Cz boules. Instead of using poly-Si from the Siemens process to feed crystallization, the new process uses the high-purity, trichlorosilane (TCS) precursor gas to grow a poly-Si feed rod in-situ during a modified Fz1,2 boule growth process. The gas-to-boule float zone process enables opportunity to produce high-purity (low metals and oxygen content), uniformly doped single crystal silicon boules and wafers with high bulk lifetimes (τ bulk > 15 ms) to enable higher efficiency cells (>27 %) with fewer known degradation mechanisms than Czochralski (Cz)-grown wafers. These benefits reduce the levelized cost of electricity (LCOE) of PV-produced electricity. Here we show the results of our CFD and chemical modeling of the process to prove feasibility and economic viability.

14 SOLAR ENERGY↗
DOE OSTI2025

Field Aging of Photovoltaic Module Packaging Materials: DuraMAT Field Module Library

To understand and develop models for silicon photovoltaic module degradation, accelerated testing is often used, however, outdoor field testing is necessary for validation. Outdoor field testing publications are often limited by the lack of a pristine, control module to compare the fielded module to. In this work, commercially available modules were purchased from seven different manufacturers for outdoor fielding then destructive characterization to investigate packaging material degradation on

14 SOLAR ENERGY↗
DOE OSTI2025

Passivation and Degradation of Sulfur-Treated Silicon Surfaces for Photovoltaics

Sulfur-based passivation for silicon surfaces using H2S gas is an alternative passivation method to reduce the thermal budget for Si photovoltaics. To understand the impact of the high-quality passivation and an observed passivation efficiency decrease after air exposure, we have studied the chemical surface structure by X-ray photoelectron spectroscopy (XPS), X-ray Auger electron spectroscopy (XAES), and S and Si L2,3 X-ray emission spectroscopy (XES). On the S-passivated silicon surfaces, we find the formation of S–Si bonds, in addition to some Si–O bonds. Upon air exposure, sulfur partially desorbs from the Si surface and an increased presence of Si–O and S–O bonds is observed. We identify that well-defined S–Si bonds are crucial to maintain high-quality surface passivation for Si photovoltaics, which allows further optimization of the fabrication process for S-based passivation on silicon.

Hua, Amandee↗
DOE OSTI2025

Experimental Validation of a Module Cell Cracking Model

The What's Cracking app can predict how changes in crystalline silicon photovoltaic (PV) module materials, design, and mounting affect its susceptibility for cell fracture under uniform loading. This work has experimentally validated the app. A set of commercial crystalline silicon PV modules was obtained for this study. The modules were uniformly loaded at three different mounting points, and their subsequent cell fractures were recorded. A large sample size allowed for the development of an experimental statistical model for cell fracture. Here, the comparison of the experiment to predictions from the app is in excellent agreement. Both experimental and modeling results also elucidate how moving the module mounting points toward the center of the module increases the probability of cell fracture.

14 SOLAR ENERGY↗
DOE OSTI2024

Enhanced performance of Bi 2 S 3 /TiO 2 heterostructure composite films for solar cell applications

Day to day energy production is shifting towards renewable energy sources as these sources become more economically viable while being less polluting to operate; solar energy has become one of the major sources of renewable energy. However, it currently relies on ultra-pure silicon ingots to produce commercial silicon photovoltaics, which prevents the cost of electricity being produced to compete with non-renewable energy production. A viable low-cost alternative for silicon based cells would be dye-sensitized solar cells (DSSCs), which are easier and cheaper to manufacture as they do not require expensive and delicate raw materials to make. Moreover, they could be made semi-flexible which allows for a greater variety of applications. A DSSC consists of three components, a photo-electrode, an electrolyte and a counter-electrode. When exposed to incident light, the complex photosensitizers in the photoelectrode release electrons which are transported to the external load, leaving the photoelectrode in an oxidized state. The electrons are collected by the counter electrode and used to reduce the electrolyte. This charged electrolyte then reduces the positively charged photoelectrode, allowing the process to begin again. To improve the efficiency of this process, we explore the use of bismuth sulfide (Bi 2 S 3 ) and titanium oxide (TiO 2 ) composite as photoelectrode material and investigate their impact on the efficiency of DSSC.

14 SOLAR ENERGY↗
DOE OSTI2025

Resistivity distribution and donor properties of antimony-doped n -type Czochralski silicon ingots

We investigate antimony (Sb)-doped Czochralski-grown silicon as an alternative n-type substrate for photovoltaic applications, and characterize their axial resistivity distribution, donor properties, and mechanical strength. We find that Sb-doped ingots can achieve a more uniform resistivity distribution along the axial direction compared to P-doped counterparts. Dopant concentration profiles in P-doped ingots can be accurately modelled using the standard Scheil's equation, accounting only for dopant segregation during solidification. In contrast, modelling Sb-doped ingots requires consideration of both dopant segregation and evaporation effects to fit the dopant distribution accurately. Using electron paramagnetic resonance spectroscopy at 9 K, we observe two hyperfine lines in P-doped samples, and six hyperfine lines for Sb 121 and eight for Sb 123 isotopes, with the number of hyperfine lines governed by the nuclear spins. We further identify two-atom Sb clustering in the Sb-doped wafers, confirmed through simulations of the additional weak electron paramagnetic resonance peaks. Finally, we find that 140 μm as-cut planar Sb-doped wafers exhibit slightly higher mechanical strength compared to P-doped wafers.

14 SOLAR ENERGY↗
DOE OSTI2025

Measurement of Contact Resistivity In Symmetric Polycrystalline Si/SiO x /Monocrystalline Si Test Structures Using Variable Light Illumination

While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.

14 SOLAR ENERGY↗
DOE OSTI2025

Characterization of dangling bond defects at the crystalline Si/SiO x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO x /polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm 2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm 2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J o , values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P b0 and P b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO x interface. The EDMR signals were lower for the cell with a lower value of J o , while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.

14 SOLAR ENERGY↗
DOE OSTI2025

A Combined Computational and Mathematical Analysis of Interconnect Fatigue Potential in Photovoltaic Modules

A finite element model of a 60-cell monocrystalline silicon glass-polymer photovoltaic module was simulated with ±1.0 kPa and ±2.4 kPa loads applied to the glass to calculate the deformation under load. Cell-to-cell displacements were used to approximate interconnect strain and stress. A mathematical fatigue cycle life relation was fitted to data for the interconnect material (copper), to generate a life prediction at each interconnect location based on the local stress means, reversal extents, and amplitudes. Interconnect stress was found to be significantly asymmetric about zero despite symmetric positive and negative module loads due to laminate thickness offsets about the neutral plane and the effects of module framing. Cycle life results indicated that interconnect fatigue failure was unlikely to occur over a 30-year lifetime of conservative wind and snow load cycles since the typical cell design feature of leaving some unconstrained length between the cell edge and first solder pad increases the effective gauge length and decreases the stress levels below the material endurance limit. Follow-up analyses found that 3.6 mm and 6.4 mm were the minimum unconstrained lengths required to survive the assumed lifetime of wind and snow cycles, respectively, confirming that typical industrial module constructions with 8–15 mm unconstrained lengths should survive conservatively. Notably, large magnitude, low-cycle snow loading was consistently the limiting factor requiring a longer unconstrained interconnect length. Finally, insights and workflows from this study inform module interconnection design limits for survival against mechanical fatigue in deployment environments.

14 SOLAR ENERGY↗
DOE OSTI2025

Exciton fission enhanced silicon solar cell

While silicon solar cells dominate global photovoltaic energy production, their continued improvement is hindered by the single-junction limit. One possible solution is to use molecular singlet exciton fission to generate two electrons from each absorbed high-energy photon. We demonstrate that the long-standing challenge of coupling molecular excited states to silicon solar cells can be overcome using sequential charge transfer. Combining zinc phthalocyanine, aluminum oxide, and a shallow junction crystalline silicon microwire solar cell, the peak charge generation efficiency per photon absorbed in tetracene is (138% ± 6%), comfortably surpassing the quantum efficiency limit for conventional silicon solar cells and establishing a new, scalable approach to low-cost, high-efficiency photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2025

Solar Cell Metallization Wear is Sensitive to Loading Frequency

Here, we performed cyclic loading of photovoltaic laminates with precracked silicon cells to explore if and how loading frequency and contact pressure influence the ensuing gridline wear-out process. A measurement of parallel resistance across cracked gridlines on a laminated cell coupon was used as the metric for gridline electrical contact degradation. A statistical analysis of variance (ANOVA) analysis of the experimental results discerned that loading frequency is a more significant factor than contact pressure for gridline degradation.

14 SOLAR ENERGY↗
DOE OSTI2025

Self‐Assembled Monolayer Templating for Engineered Nanopinholes in Passivated Contact Solar Cells

We present a novel self-assembled monolayer (SAM)-based technique to make nanopinhole-enabled passivated contacts on silicon solar cells by tuning the SAM coverage area and etch selectivity. We deposit trimethyl-silyl Si(CH 3 ) 3 groups using hexamethyldisilazane (HMDS) as the precursor over passivating dielectric layers and their stacks (SiO 2 , SiN x , SiO 2 /SiN x ) and interrupt the HMDS attachment chemistry shortly before a full monolayer is formed on its surface. Subsequent etching in dilute HF produces pinholes through the dielectric layers due to the higher etch resistance of the SAM to HF etching. The pinhole areal density (10 4 –10 8 /cm 2 ) and size (10–1000 nm) can be tuned both by duration of HMDS attachment and HF etch time. Pinholes were characterized by atomic force microscopy, tetramethylammonium hydroxide (TMAH) selective etch, and Ag decoration by electroless plating. Polysilicon (poly-Si) passivated contacts enabled by pinholes were formed by subsequent deposition of doped amorphous silicon (a-Si:H) followed by thermal crystallization and dopant drive-in. At optimal areal pinhole density ≈10 7 /cm 2 , contacts exhibit both passivation and carrier transport via pinholes as evidenced by electron beam induced current, transmission line measurements, and carrier lifetime measurements. Solar cells based with these pinhole contacts show V oc = 723 mV and FF = 80.3%. The remaining SAM layer does not affect device performance.

14 SOLAR ENERGY↗
DOE OSTI2025

UV + Damp Heat Induced Power Losses in Fielded Utility N-Type Si PV Modules

A recent trend in commercial PV modules is a transition to n-type silicon cells, including passivated emitter rear totally diffused (n-PERT), tunnel oxide passivated contact (TOPCon), and silicon heterojunction (SHJ). There is evidence via lab studies that some of these cells are more susceptible to UV induced degradation (UVID), yet there is a lack of confirmation that such degradation occurs in the field. Current IEC standards designed to screen for early module failures require only minimal UV exposure (15 kWh/m2 280-400 nm, ~2-3 months equivalent outdoor exposure). Here, we investigate fielded n-PERT silicon (Si) modules from a commercial utility that show power losses of ~2%/year. We present a comprehensive picture of the physics and chemistry of degradation supported by both module and cell electronic characterization (EL, PL, IV, EQE, and DLIT) and materials-level morphological and chemical analysis (SEM, EDS, XPS, FTIR, and HPLC). All sampled site modules show short circuit current (Isc) and open circuit voltage (Voc) losses when compared to unfielded spares, with the most severely degraded also having losses in fill factor (FF). We identify two different degradation modes contributing to overall power loss: (1) external quantum efficiency (EQE) measurements show losses in the blue range of the spectra, indicative of cell surface recombination losses, and (2) variations in high series resistance (Rs) at the cell level that are correlated with compositional differences in cell metallization. Using unfielded spares, we were able to reproduce Voc, Isc, and EQE losses via a minimum UV stress of 67.5 kWh/m2 (280-400 nm), 4.5x the exposure currently required in IEC 61215-2 (MQT 10). Degradation continued with additional UV dosage equivalent to the fielded modules (405 kWh/m2 total), with power loss leveling out at an average of 6.1%. Subsequent 1000 h of 85% RH/85degrees C damp heat testing showed that cells exposed to UV underwent additional severe series resistance degradation, even those without the susceptible paste composition seen in the field, whereas non-UV exposed cells saw little change. We attribute this to higher concentrations of acetic acid generated on the UV exposed area of the module, leading to degradation of the gridline/cell interface and high Rs. This study is unique in that it reproduces field observed utility scale UVID with an accelerated test and supports the need for standards development for longer UV exposure combined with other stress factors to catch materials interplay within a module package.

14 SOLAR ENERGY↗