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To contribute to the U.S. Department of Energy's involvement with the U.S. photovoltaic (PV) industry's efforts to meet very competitive PV efficiency, cost, and reliability goals, NREL's Silicon PV program focuses on next-generation, high-efficiency silicon (Si) PV.
Photovoltaic (PV) technology offers an economic and sustainable solution to the challenge of increasing energy demand in times of global warming. The world PV market is currently dominated by the homo-junction crystalline silicon (c-Si) PV technology based on high temperature diffused p-n junctions, featuring a low power conversion efficiency (PCE). Recent years have seen the successful development of Si heterojunction technologies, boosting the PCE of c-Si solar cells over 26%. This article reviews the development status of high-efficiency c-Si heterojunction solar cells, from the materials to devices, mainly including hydrogenated amorphous silicon (a-Si:H) based silicon heterojunction technology, polycrystalline silicon (poly-Si) based carrier selective passivating contact technology, metal compounds and organic materials based dopant-free passivating contact technology. The application of silicon heterojunction solar cells for ultra-high efficiency perovskite/c-Si and III-V/c-Si tandem devices is also reviewed. In the last, the perspective, challenge and potential solutions of silicon heterojunction solar cells, as well as the tandem solar cells are discussed.
Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.
In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO 2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 10 3 bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 10 8 cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations and domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO 2 -based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.
Advanced packaging technologies are currently being designed and developed by the power electronics industry however, the maximum operating temperature is still limited to 175 degrees Celsius for the silicon carbide devices. Bonded materials such as sintered copper and polymeric materials are potential candidates for high temperature operation, but it is critical to characterize and evaluate its reliability under harsh operating conditions. In this project, we discuss the results of the accelerated experiments conducted on sintered copper and polymeric materials. Additionally, a novel framework to develop the lifetime prediction model of bonded interfaces through employing statistical and machine learning models are described. In this task, scanning acoustic microscope images of bonded interfaces obtained under thermal cycling experiments are used as the data.
A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.
Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge 2 Sb 2 Te 5 ), GeTe-Sb 2 Te 3 , GSST (Ge 2 Sb 2 Se 4 Te 1 ), Sb 2 S 3 /Sb 2 Se 3 , Sc 0.2 Sb 2 Te 3 (SST), and In 2 Se 3 , highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.
Wide-Band Gap (WBG) power devices have become a promising option for high-power applications due to the superior material properties over traditional Silicon. To not limit WBG devices’ mother nature, a rugged and high-performance power device packaging solution is necessary. This study proposes a Double-Side Cooled (DSC) 1.2 kV half-bridge power module having dual epoxy resin insulated metal substrate (eIMS) for solving convectional power module challenges and providing a cost-effective solution. The thermal performance outperforms traditional Alumina (Al2O3) Direct Bonded Copper (DBC) DSC power module due to moderate thermal conductivity (10 W/mK) and thin (120 mm) epoxy resin composite dielectric working as the IMS insulation layer. This novel organic dielectric can withstand high voltage (5 kVAC @ 120 μm) and has a Glass Transition Temperature (Tg) of 300°C, which is suitable for high-power applications. In the thermal-mechanical modeling, the organic DSC power module can pass the thermal cycling test over 1,000 cycles by optimizing the mechanical properties of the encapsulant material. In conclusion, this article not only proposes a competitive organic-based power module but also a methodology of evaluation for thermal and mechanical performance.
Amorphous silicon nitride is a common material in microelectronics devices, which acts as an insulating barrier. Extended annealing times at elevated temperature can initiate crystallization of α-Si 3 N 4 , which does not possess the same barrier properties. Molecular dynamics can resolve the fundamental mechanism for α-Si 3 N 4 crystallization and the influence of local environments. Here, we compare two interatomic potentials and conclude that these models predict structural features (e.g., angular distributions and densities) which span the range of experimental measurements. We confirmed these models reproduce experimental estimates of activation energy and leveraged these models to identify crystallization drivers. We conclude that near-T g , facet-dependent silicon nitride crystal growth rates can be predicted directly by either bulk or interfacial diffusion properties.
Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.
Abstract Silicon-Carbide (SiC) power devices have become a promising option for traditional Silicon (Si) due to the superior material properties. To fully take advantage of the SiC devices, a high-performance power device packaging solution is necessary. This study proposes a cost-effective double-sided cooled (DSC) 1.2 kV SiC half-bridge power module using organic epoxy-resin composite dielectric (ERCD) substrates. The high mechanical and thermal performance of the power module is achieved by the low-modulus, moderate thermal conductivity, and relatively thin (120 μm) layer of ERCD material compared with traditional metal-clad ceramic approaches. This novel organic dielectric can withstand high voltage (5 kV @ 120 μm) and operate up to 250°C continuously, which is indispensable for high power applications. The thermal modeling results show that the equivalent thermal resistance junction-to-case (Rjc_eq) of the DSC power module using dual direct bonded copper (DBC) is 17% higher than the dual ERCD configuration. Furthermore, a non-insulated DSC power module concept is proposed for maximizing thermal performance by considering thermal vias in the ERCD substrate and direct-soldered heat sink. A thought process for optimization of thermal via design is demonstrated and it shows up to 24% of improvement on thermal performance compared with the insulated DSC power module.
Along with advanced generations of reactors quickly becoming reality, the need for instrumentation to provide reliable information for their safety and operation is also becoming relevant. Instrumentation-wise, molten salt reactors (MSRs) represent an especially challenging case in which detectors must survive extreme temperatures, high amounts of radiation, and a highly corrosive coolant. Adding to the complexity, tight material control and accounting must be maintained with any special nuclear material (SNM), a practice made more difficult by the nature of a loop of flowing fuel. Alpha spectroscopy offers a unique window into investigating the isotopic concentrations of actinides within just such a molten salt environment. The characteristic α emissions of specific actinide isotopes in the salt enable quantification of their concentrations. Semiconductor devices based on wide bandgap materials such as silicon carbide and gallium oxide can withstand the extreme temperatures within MSRs and offer good chemical stability with the corrosive salt. Collaborators at The Ohio State University are fabricating and testing a β gallium oxide α particle sensor that could identify actinide concentrations within the fuel salt to help improve the material control and accounting required for complicated system inherent to MSRs.
The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.
Abstract Ultra‐wide bandgap (UWBG) materials are poised to play an important role in the future of power electronics. Devices made from UWBG materials are expected to operate at higher voltages, frequencies, and temperatures than current silicon and silicon‐carbide‐based devices and can even lead to significant miniaturization of such devices. In the UWBG field, aluminum nitride and boron nitride have attracted great interest; however, the B x Al 1− x N alloys are much less studied. In this work, using first‐principles simulations combining density‐functional theory and the cluster expansion method, the crystal structure of B x Al 1− x N alloys is predicted. Seventeen ground state structures of B x Al 1− x N with formation energies between 0.11 and 0.25 eV atom ‐1 are found. All of these structures are found to be dynamically stable. The B x Al 1− x N structures are found to have predominantly a tetrahedral bonding environment; however, some structures exhibit sp 2 bonds similar to hexagonal BN. This work expands knowledge of the structures, energies, and bonding in B x Al 1− x N which aids their synthesis, the innovation of lateral or vertical devices, and discovery of compatible dielectric and Ohmic contact materials.
We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger–Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two holes and one electron is suppressed by 38% under tensile strain. We further analyze the specific phonon contributions that mediate the phonon-assisted AMR mechanism, demonstrating the increased anisotropy under strain. In conclusion, our results indicate that the application of tensile strain increases the lifetime of minority electron carriers in p-type silicon and can be leveraged to improve the efficiency of silicon devices.
Two-dimensional (2D) van der Waals (vdW) materials hold the potential for ultrascaled ferroelectric (FE) devices due to their silicon compatibility and robust polarization down to atomic scale. However, the inherently weak vdW interactions enable facile sliding between layers, introducing complexities beyond those encountered in conventional ferroelectric materials and presenting substantial challenges in uncovering intricate switching pathways. Here, we combine atomic-resolution imaging under in situ electrical biasing conditions with first-principles calculations to unravel the atomic-scale switching mechanisms in SnSe, a vdW group IV monochalcogenide. Our results uncover the coexistence of a consecutive 90° switching pathway and a direct 180° switching pathway from antiferroelectric (AFE) to FE order in this vdW system. Atomic-scale investigations and strain analysis reveal that the switching processes simultaneously induce interlayer sliding and compressive strain, while the lattice remains coherent despite the presence of multidomain structures. These findings elucidate vdW ferroelectric switching dynamics at atomic scale and lay the foundation for the rational design of 2D ferroelectric nanodevices.
High-performance room-temperature radiation detectors (high energy resolution for spectrometers, high spatial resolution for imaging devices, and low defect-density for high flux applications) are needed for photon energies (>20 keV) that are not well suited for silicon detectors. Applications for such radiation detectors include nonproliferation, synchrotron, medical, astrophysics, and homeland security. Material- and device- characterization to understand and solve the limiting factors of radiation detection materials and devices is a core element of a radiation detector development R&D program. This presentation will give an overview on the two main synchrotron-based characterization techniques that have been employed by the authors in the last ~20 years: (1) White Beam X-ray Diffraction Topography and (2) Micron-scale detector mapping. A perfect (one domain) crystal (radiation detection material) is a requirement to achieve a highperformance radiation detector. White Beam X-ray Diffraction Topography (WBXDT) allows the rapid screening of the crystallinity of the detector material. With WBXDT we can quickly screen CZT and other crystals to make sure they have only one domain, and to see the presence of extended defects and strain fields.
Organic semiconducting polymers are exciting materials for electronic applications because of their good mechanical and optoelectronic properties. A major advantage of organic semiconductors is their solution processability. This allows access to a variety of simple and cost-effective device fabrication methods compared to the expensive, high-temperature processing methods required for silicon-based electronics. However, these materials often have low solubility, which limits their processing to toxic halogenated solvents. Also, their limited solubility often leads to interfacial mixing during device fabrication. Herein, this work explores the incorporation of environmentally friendly carbohydrate side chains in conjugated polymers to enhance processability in eco-friendly solvents. Moreover, a mild postprocessing treatment was designed to enable solvent resistance. Isoindigo-based polymers with varied ratios of acetyl-protected galactose side chains were synthesized to improve solubility in o-anisole in the protected state, while inducing solvent resistance through intramolecular hydrogen bonding in the deprotected state. Solvent resistance was confirmed both visually upon submersion in various solvents and using UV–visible spectroscopy. Importantly, the mild basic treatment to achieve solvent resistance has no negative impact on the electronic performance of these materials in organic field-effect transistors, even after subsequent submersion in various solvents, making them a valuable platform for the production of green processable multilayer electronics.