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At least 19 records

Towards a Deeper Fundamental Understanding of (Al,Sc)N Ferroelectric Nitrides

Density functional theory (DFT) calculations, within the virtual crystal alloy approximation, are performed, along with the development of a Landau-type model employing a symmetry-allowed analytical expression of the internal energy and having parameters determined from first principles, to investigate properties and energetics of Al1-xScxN ferroelectric nitrides in their hexagonal forms. These DFT computations and this model predict the existence of two different types of minima, namely, the fourfold-coordinated wurtzite (WZ) polar structure and a five-fold coordinated paraelectric hexagonal phase (denoted as H5), for any Sc composition up to 40%. The H5 minimum progressively becomes the lowest-energy state within hexagonal symmetry as the Sc concentration increases from 0 to 0.4. Furthermore, the model points to several key findings. Examples include the crucial role of the coupling between polarization and strains to create the WZ minimum, in addition to polar and elastic energies, and that the origin of the H5 state overcoming the WZ phase as the global minimum within hexagonal symmetry when increasing the Sc composition mostly lies in the compositional dependency of only two parameters-one linked to the polarization and another one being purely elastic in nature. Other examples are that forcing Al1-xScxN systems to have no or a weak change in lattice parameters when heating them allows us to reproduce their finite-temperature polar properties well and that a value of the axial ratio close to that of the ideal WZ structure implies a large polarization at low temperatures but not necessarily at high temperatures because of the ordered-disordered character of the temperature-induced formation of the WZ state. Such findings should allow for a better fundamental understanding of (Al,Sc)N ferroelectric nitrides, which may be used to design efficient devices having, e.g., low operating voltages.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Porous reaction-bonded silicon nitride: Size effects for pressureless nitriding of binder jet additively manufactured silicon

The direct nitridation of binder jet additively manufactured silicon to produce porous reaction-bonded silicon nitride was explored to determine the maximum thickness of the sample that could be converted to >99% silicon nitride. The maximum thickness that could be nitrided was investigated by nitriding cubes of increasing physical size on the millimeter scale. Highly porous samples with high conversion ( > 99%) to silicon nitride were achieved in cubes with 35 mm edge length. It was shown that the silicon nitride phase content changes with increasing sample size.

Aguirre, Trevor [ORNL] (ORCID:0000000281469630)

Strength and thermal shock resistance of porous reaction-bonded silicon nitride by direct nitriding of binder jet additively manufactured silicon

The direct nitridation of binder jet additively manufactured silicon to produce porous silicon nitride was explored. The Taguchi Design of Experiments method was used to systematically study the effect of time, temperature, and nitrogen flow rate on the direct nitriding of binder jet additively manufactured silicon to produce porous reaction-bonded silicon nitride (RBSN). Highly porous (61%) samples with high conversion (99%) to silicon nitride were achieved using a thermal profile that utilized two isothermal holds. Further, it was shown that these samples exhibited thermal shock resistance and a low coefficient of thermal expansion. These results indicate that RBSN is readily achievable through additive manufacturing.

Ceramics

NSUF RTE completion report for 23-4780: Microstructural Defect Induced Thermal Conductivity Reduction in Uranium Nitride and Thorium Nitride

Uranium nitride (UN) is known to have a higher thermal conductivity than traditional oxide fuels, which could lead to a more efficient energy transport and lower local temperature during its lifetime. But the thermal transport performance of UN in extreme environments has not been systematic studied. This study investigated the irradiation induced microstructural defects in UN and the impacts on thermal conductivity. The samples were produced by spark plasma sintering at University of Texas-San Antonio (UTSA), Los Alamos National Laboratory (LANL), and Idaho National Laboratory (INL). Thermal conductivity of UN before and after 2MeV proton irradiation were measured by using laser metrology at INL in a temperature range of 77-295K. Thermal conductivity measurements in this wide, cryogenic temperature range is critical to understand the phonon scattering mechanisms between the thermal energy carrier, phonons, and different types of irradiation-induced defects. In order to ensure the measurements were conducted in the same grains and minimize the impact of the local heterogeneities, the measurement locations were highlighted by fiducial marks using the focused ion beam (FIB) with grain orientation identified using the electron backscatter diffraction (EBSD) at the Center of Advanced Energy Studies (CAES). Irradiation experiment was conducted at the Ion Beam Laboratory at Texas A&M University (TAMU). A total of 6 samples were irradiated with different irradiation doses and temperatures. After irradiation, the microstructure was characterized by using Transmission Electron Microscope (TEM) at CAES (also in the FIB marks).

36 - MATERIALS SCIENCE

Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/Oxidation Attack

Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine applications. Protective coatings and/or inlet air filtration may be required to achieve required ceramic component lives in more aggressive environments.

Nitride

Investigating the effects of local environment on nitrogen vacancies in high-entropy metal nitrides

High-entropy metal nitrides are an important material class in a variety of applications, and the role of nitrogen vacancies is of great importance for understanding their stability and mechanical properties. Here, we study six different high-entropy nitrides with eight different metal species to build a predictive model of the nitrogen-vacancy formation energy. We construct sets of supercells that maximize the number of unique nitrogen environments for a given chemistry, and then use density-functional theory to calculate the energy density for all nitrogen sites, and the vacancy formation energies for the highest, lowest, and a median subset based on the energy densities. The energy density of nitrogen sites correlates with the vacancy formation energies, for binary, ternary, and high-entropy nitrides. A linear regression model predicts the vacancy formation energies using only the nearest-neighbor composition; across our eight metals, we find the largest vacancy formation energies next to Hf, then Zr, Ti, V, Cr, Ta, Nb, and the lowest near Mo. Additionally, we see that binary nitride data show qualitatively similar vacancy formation energy trends for high-entropy nitrides; however, the binary data alone are insufficient to predict the complex nitride behavior. Our model is both predictive and easily interpretable, and correlates with experimental data.

DeSilva, Charith R. [Univ. of Illinois at Urbana-C

Thin-Film Stabilization and Magnetism of η -Carbide-Type Iron Nitrides

Transition-metal nitrides in ..eta..-carbide-type structures exhibit unusual bonding motifs and proximity to magnetic instabilities. Yet they remain unexplored in thin-film form due to the difficulty of stabilizing nitrogen-poor ternaries among competing phases. Here, we report the thin-film synthesis and phase-stability mapping of the ..eta..-nitride systems Fe-W-N and Fe-Mo-N. Amorphous Fe-M-N (M = W, Mo) combinatorial libraries deposited by reactive cosputtering crystallize upon rapid thermal annealing, enabling systematic identification of synthesis windows as a function of composition and annealing temperature. Using laboratory powder X-ray diffraction and synchrotron grazing incidence wide-angle X-ray scattering, we establish that Fe 3 Mo 3 N-based ..eta..-carbide phases form over a substantially broader compositional and thermal range than W-based compositions, where ..eta.. structures are stabilized only when the films are Fe-rich. These trends are rationalized using mixed chemical-potential vs composition phase diagrams that capture the narrow nitrogen chemical-potential stability of ..eta..-nitrides. Magnetic measurements reveal that ferromagnetism is induced in Fe-rich Fe 3.54 Mo 2.46 N with a small exchange-bias-like response that is absent in Fe 3 W 3 N-based compositions, highlighting the sensitivity of magnetic behavior to modest deviations from stoichiometry. This work establishes practical thin-film synthesis routes for ..eta..-nitride materials and demonstrates how composition can be tuned to access emergent magnetic phenomena in these complex nitrides.

36 MATERIALS SCIENCE

Synthesis of Chromium(IV) Nitrides Through High-Spin Tetrahedral Chromium(I) Intermediates

Reduction of (depe) 2 CrCl 2 (depe = 1,2-bis- (diethylphosphino)ethane) and (dep-benz) 2 CrCl 2 (dep-benz = 1,2-bis(diethylphosphino)benzene) under 1 atm of N 2 furnished the dinitrogen complexes (depe) 2 Cr(N 2 ) 2 and (dep-benz) 2 Cr(N 2 ) 2 , respectively. One-electron oxidation of these products with FcBAr F 4 (Fc = ferrocenium, BAr F 4 = B(3,5-(CF 3 ) 2 C 6 H 3 ) 4 ) yielded the unusual, high-spin tetrahedral complexes [(depe) 2 Cr][BAr F 4 ] and [(dep-benz) 2 Cr][BAr F 4 ] with concomitant loss of dinitrogen. Reaction of the chromium(I) derivatives with Ph 3 CN 3 furnished rare examples of chromium(IV) nitrides as confirmed spectroscopically and by X-ray crystallography. While [(depe) 2 Cr(≡N)][BAr F 4 ] underwent association of isocyanides accompanied by partial ligand dissociation, neither chromium nitride was reactive toward H 2 or diphenylsilane under thermal or photochemical conditions. These results distinguish the unique properties of the chromium(IV) nitrides as compared to heavier group 6 congeners and demonstrate both the feasibility of nitride synthesis and the limitations of dinitrogen cleavage and subsequent N−H bond formation.

Chromium

Reactive flash sintering and characterization of bulk high entropy nitrides

Over the past decade, numerous high-entropy ceramics have been synthesized, often displaying attractive properties. However, the study on facile preparation of bulk high entropy nitrides (HEN) are limited, despite its broad potential applications. This research demonstrates for the first time rapid fabrication (within ∼6 min) of bulk high-entropy nitrides, especially (Al 0.17 Nb 0.17 Ta 0.17 Ti 0.32 Zr 0.17 )N, from binary nitride powder mixtures using a highly efficient reactive flash sintering (RFS) technique. X-ray diffraction (XRD) shows the HENs from RFS are near single-phase solid solutions with a rock salt crystal structure, while in situ synchrotron study carried out during RFS captured in real time the formation of HEN, which was preserved upon cooling, suggesting thermodynamic stability of the HEN phase, even up to extreme pressure (∼35.6 GPa). Microscopic analyses using SEM, STEM, and EDS reveal decent uniformity for HEN with no obvious segregation of elements, even to submicron scale. Some properties of the obtained bulk HENs are consistent with expectations. For example, their hardness and bulk modulus are close to estimates based on rule-of-mixture (ROM) values from the constituent binary nitrides. Meanwhile, some other measured properties seem to show surprises. For example, the fracture toughness for the HENs (e.g., 7.81 ± 1.40 MPa•m 1/2 or higher) turns out to be more than double of the expected ROM estimates. The significantly improved fracture toughness is attributed to the observed nano-layered structure of the HENs, despite the HEN’s cubic crystal structure and high hardness. In addition, the oxidation resistance shows improvement up till ∼800°C, possibly due to Ta doping that suppress oxygen vacancy formation in the oxide shell, while the 5-metal HEN of (Al 0.17 Nb 0.17 Ta 0.17 Ti 0.32 Zr 0.17 )N displays superconductivity (T c of ∼5–7 K from magnetism and resistivity measurements, slightly lower than ROM estimate), despite insulating property of starting AlN. Furthermore, future study combining experimental investigation using larger samples to confirm the observed increase in fracture toughness and oxidation resistance, theoretical modeling at different length scale, and more detailed structural/chemical characterization, especially at the atomic scale, are all needed to fully understand the inter-relationships between composition, processing, structure, and novel properties for these HENs and the development of related new materials for different applications.

Flash sintering

Unraveling In-Situ Formation of Surface Nickel Nitride Structures in Plasma-Assisted Catalytic Ammonia Synthesis

We report the in situ formation of Ni nitride for plasma-assisted ammonia synthesis. Both the surface nitrogen concentration and the ammonia formation rate exhibit dependence on the N 2 :H 2 feed ratio. The maximum surface nitrogen concentration occurs at a N 2 :H 2 ratio of 4:1, and the maximum catalytic activity occurs at 2:1. In contrast, the formation of gas phase radicals is less sensitive to feed composition, indicating that Ni nitride is more kinetically relevant to ammonia production than gas-phase radicals. The plasma-induced formation of Ni nitride is therefore proposed to be a critical contributor to the synergistic effects in plasma-assisted catalytic ammonia synthesis. Additionally, Ni nitride alters the surface reaction mechanism of plasma-assisted ammonia synthesis, with the rate-determining-step (RDS) shifting to surface-bound NH 3 formation rather than N 2 activation at temperatures below 373 K. These findings provide mechanistic insight that opens opportunities for optimizing the performance of plasma-assisted catalytic ammonia synthesis

Ammonia

Ammonia Synthesis by a Supported Iron-Lithium Hydride Precatalyst: Silicon Nitride Support Enabled Synthesis and Nitrogen Reservoir Dynamics

Amorphous silicon nitride (Si 3 N 4 ) is an unconventional support for the chemisorption of organometallic complexes and offers potential improvements in active site stability and reactivity through enhanced metal-nitrogen covalency and orbital overlap in bonding interactions with the nitride framework. Here, we show that silicon nitride-supported iron mesityl complexes display divergent reactivity compared to their silica-supported homologues, resisting metallic particle formation under reducing pretreatment conditions (exposure to excess organolithium reagents) and maintaining active iron/lithium speciation under ammonia synthesis conditions that is absent on the oxide support. When the organometallic iron complex on silicon nitride is exposed to excess n-butyllithium, iron remains isolated, catalyzing the conversion of butyllithium to lithium hydride, resulting in a divalent iron site in a polyhydride environment. In contrast, the silica-supported complex is converted to reduced iron clusters without forming persistent isolated hydrides. These structural differences lead to markedly different catalytic behaviors under ammonia synthesis conditions. The Li/Fe/Si 3 N 4 catalyst is highly active (7.5 mol NH 3 /mol Fe/h at 300 °C, 10 bar, or 46 mol NH 3 /mol Fe/h at 400 °C, 10 bar), while both the silica-supported analog and the nonlithiated Si 3 N 4 -supported species are inactive. Notably, this activity is enhanced relative to previously reported iron-lithium hydride composite catalysts (0.43–4.1 mol NH 3 /mol Fe/h at 300 °C, 10 bar) and relative to the industrial benchmark promoted iron catalyst KM1 (3.0 mol NH 3 /mol Fe/h at 400 °C, 10 bar). The catalyst activation and LiH/LiNH x nitrogen reservoir dynamics for Li/Fe/Si 3 N 4 are studied by X-ray Absorption, Mössbauer, and in situ DRIFT spectroscopies and isotopic exchange kinetics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Epitaxial integration of superconducting nitrides with cubic GaN

Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics.

Condensed matter physics

Synthesis and Physical Properties of Manganese Chromium Nitride Thin Films Grown via Molecular Beam Epitaxy

Here, we demonstrate the ability to grow epitaxial thin films of manganese–chromium nitride (Mn x Cr 1–x N) across the entire composition range on magnesium oxide (MgO) (1 0 0) surfaces by molecular beam epitaxy. By independently controlling the ratio of the atomic fluxes of manganese and chromium, the compositional dependence of structural and electrical transport properties is determined. Soft X-ray absorption shows that the valence states of Cr( 3+ ) and Mn( 3+ ) remain identical among these MnCrN epitaxial films. The metallic transport behavior of binary manganese nitride (MnN) and chromium nitride (CrN) is suppressed in the ternary alloys. Changes in room temperature electrical resistivity of up to 100 times and 5 orders of magnitude at cryogenic temperatures are observed. This work expands the variety of nitride compounds available for epitaxial integration and could provide additional flexibility for the development of metal–semiconductor–insulator junctions for spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Computational discovery of a novel double transition metal nitride MXene and its applications as an anchoring and catalytic material in Li–Se batteries

Double transition metal (DTM) nitride MXenes offer enhanced electrical conductivity and tunable catalytic properties compared to conventional carbide-based MXenes. In this study, we employed first-principles density functional theory (DFT) calculations to discover and computationally validate a novel DTM nitride MXene, Nb 2 TiN 2 , derived from its MAX phase precursor and investigated its potential as an anchoring material (AM) for Li–Se batteries. This newly proposed MXene expands the compositional landscape of DTM nitrides and opens new avenues for functional material design. We performed a comprehensive analysis of the thermodynamic and electronic properties of Nb 2 TiAlN 2 , and the MAX phase precursor to Nb 2 TiN 2 to assess its structural stability and exfoliation potential. Exfoliation energy calculations confirmed the feasibility of synthesizing Nb 2 TiN 2 from Nb 2 TiAlN 2 . We then explored the functionalized form, Nb 2 TiN 2 S 2 , evaluating its capability to serve as an effective anchoring material (AM) in Li–Se batteries by analyzing the reaction mechanisms and kinetics of the selenium reduction reaction (SeRR). Our results indicate that Nb 2 TiN 2 S 2 exhibits a strong binding affinity for lithium polyselenides (Li 2 Se n ), effectively suppressing the shuttle effect. Gibbs free energy calculations for the rate-limiting step of the SeRR reveal favorable kinetics and reduced reaction barriers. Overall, this study provides a detailed evaluation of the structural and electronic properties of a newly proposed DTM nitride MXene and its S-functionalized derivative and the catalyzing effect of Nb 2 TiN 2 S 2 in accelerating the reaction kinetics in Li–Se batteries. These findings underscore the potential importance of the further exploration of MXenes to address current challenges in high-performance Li–Se batteries.

25 ENERGY STORAGE

Synthesis and Photodriven Hydrogenation of Tungsten Nitride Complexes Prepared from Dinitrogen Cleavage

Oxidation of the Chatt-type tungsten dinitrogen compound, trans-(depe) 2 W(N 2 ) 2 (depe = Et 2 PCH 2 CH 2 PEt 2 ), with [(η 5 -C 5 H 5 ) 2 Fe][BAr F 4 ] (BAr F 4 = B(3,5-(CF 3 ) 2 C 6 H 3 ) 4 ) resulted in isolation of [(depe) 2 WN][BAr F 4 ], a rare example of a tungsten(IV) nitride prepared from N 2 cleavage. A bimetallic μ-N 2 ditungsten intermediate supported by terminal N 2 ligands was identified, and irradiation with visible light promoted dinitrogen cleavage and formation of [(depe) 2 WN][BAr F 4 ]. Performing the analogous one-electron oxidation of the related tungsten dinitrogen compound, trans-(dppe) 2 W(N 2 ) 2 (dppe = Ph 2 PCH 2 CH 2 PPh 2 ), furnished the corresponding cationic, 17-electron tungsten dinitrogen complex, [(dppe) 2 W(N 2 ) 2 ][BAr F 4 ], that was characterized by X-ray diffraction and vibrational and EPR spectroscopies. The generation of [(dppe) 2 W(N)][BAr F 4 ] was observed in low yield from the in situ formed mixed N 2 -bridged compound, [(N 2 )(depe) 2 W(μ-N 2 )W(dppe) 2 (N 2 )][BAr F 4 ] 2 , and was confirmed by independent synthesis using 1-azidoadamantane. Addition of ammonia or water to [(depe) 2 WN][BAr F 4 ] resulted in formation of the cationic imide and hydroxide complexes, [(depe) 2 W(NH)(X)][BAr F 4 ] (X = NH 2 , OH). Irradiation of [(depe) 2 WN][BAr F 4 ] with 440 nm visible light in the presence of Ir(ppy) 3 (ppy = 2-phenylpyridine) under 4 atm of dihydrogen resulted in hydrogenation of the tungsten nitride to the cationic tungsten pentahydride, [(depe) 2 WH 5 ][BAr F 4 ], with the release of free ammonia in 21% yield, a rare example of ammonia generation from dinitrogen and dihydrogen from a well-defined tungsten nitride.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Nanometer Resolution Structure‐Emission Correlation of Individual Quantum Emitters via Enhanced Cathodoluminescence in Twisted Hexagonal Boron Nitride

Understanding the atomic structure of quantum emitters, often originating from point defects or impuritie, is essential for designing and optimizing materials for quantum technologies such as quantum computing, communication, and sensing. Despite the availability of atomic-resolution scanning transmission electron microscopy and nanoscale cathodoluminescence microscopy, experimentally determining the atomic structure of individual emitters is challenging due to the conflicting needs for thick samples to generate strong cathodoluminescence signals and thin samples for structural analysis. To overcome this challenge, significantly enhanced cathodoluminescence at twisted interfaces is leveraged to achieve sub-nanometer localization precision for the first time in mapping individual quantum emitters in carbon-implanted hexagonal boron nitride. This unprecedent spatial sensitivity, together with correlative electron energy loss spectroscopy quantitative scanning transmission electron microscopy imaging, and first principles density functional theory calculations, enables the identification of the atomic structure of the 440 nm blue emitter in hexagonal boron nitride as a substituted vertical carbon dimer. Building on the atomic structure insights, nanoscale spatially precise creation of blue emitters is demonstrated by electron beam irradiation of carbon-coated hexagonal boron nitride. This advancement in correlating atomic structures with optical properties lays the foundation for a deeper understanding and precise engineering of quantum emitters, significantly advancing the development of cutting-edge quantum information technologies.

2D material

Assessing metal nitrides and metal carbides as supports for thermally stable single-atom catalysts

Single-atom catalysts supported on metal oxides have been demonstrated to exhibit exceptional activity while also maintaining single-atom stability. However, alternative supports such as metal nitrides and carbides have received far less attention. Herein, we use density functional theory to systematically investigate the relative thermal stability of single-atom catalysts over a host of transition metal nitride and carbide supports. By considering the binding and dimerization energies of isolated transition metal atoms across various surface facets, we identify transition metal/support pairs that show the most promise for high-density single-atom catalysts. We find that transition metal atoms can be stabilized on both defect sites and pristine surfaces over transition metal nitrides and carbides. Furthermore, we identify promising metal/support pairings that may be suitable for achieving both stable and high-density single-atom catalysts. Furthermore, these results provide valuable insights to guide synthesis efforts towards achieving stable single-atom transition metal catalysts.

Density functional theory

Earth-Abundant Manganese Nitride Catalysts for Mild-Condition Ammonia Synthesis

Developing advanced catalytic materials for mild-condition ammonia (NH 3 ) synthesis is essential for improving the energy efficiency of the industrial Haber-Bosch process. Here, in this study, we report a ζ-phase manganese nitride (MnN 0.43 ) catalyst for low-temperature NH 3 synthesis. The as-synthesized MnN 0.43 catalyst is protected by a carbon shell, allowing for the storage and processing of the air-sensitive metal nitride under ambient conditions. After activation in situ, the MnN 0.43 catalyst exhibits high activity for NH 3 synthesis at 250–350 °C, surpassing the conventional noble metal based Ru/MgO catalyst. A combination of kinetic, chemisorption, isotope labeling and computational studies indicate that a nitrogen vacancy-mediated associative mechanism accounts for the catalytic enhancements. Our work highlights the great potential of earth-abundant transition metal nitrides for catalyzing mild-condition NH 3 synthesis.

36 MATERIALS SCIENCE