DOE OSTI · 3028769
Unraveling In-Situ Formation of Surface Nickel Nitride Structures in Plasma-Assisted Catalytic Ammonia Synthesis
Abstract
We report the in situ formation of Ni nitride for plasma-assisted ammonia synthesis. Both the surface nitrogen concentration and the ammonia formation rate exhibit dependence on the N 2 :H 2 feed ratio. The maximum surface nitrogen concentration occurs at a N 2 :H 2 ratio of 4:1, and the maximum catalytic activity occurs at 2:1. In contrast, the formation of gas phase radicals is less sensitive to feed composition, indicating that Ni nitride is more kinetically relevant to ammonia production than gas-phase radicals. The plasma-induced formation of Ni nitride is therefore proposed to be a critical contributor to the synergistic effects in plasma-assisted catalytic ammonia synthesis. Additionally, Ni nitride alters the surface reaction mechanism of plasma-assisted ammonia synthesis, with the rate-determining-step (RDS) shifting to surface-bound NH 3 formation rather than N 2 activation at temperatures below 373 K. These findings provide mechanistic insight that opens opportunities for optimizing the performance of plasma-assisted catalytic ammonia synthesis
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Kondratowicz, Christopher [Princeton University, NJ (United States)], Zheng, Yiteng [Princeton University, NJ (United States)] (ORCID:0000000165463012), Liu, Ning [Princeton University, NJ (United States)], Chang, Ziqiao [Princeton University, NJ (United States)] (ORCID:0000000342019714), Xu, Yijie [Princeton University, NJ (United States)] (ORCID:0000000208078262), Trettin, James L. [Princeton University, NJ (United States)] (ORCID:0000000217518223), Mei, Bowen [Princeton University, NJ (United States)] (ORCID:0000000286515464), Koel, Bruce E. [Princeton University, NJ (United States)] (ORCID:0000000200324991), Ju, Yiguang [Princeton University, NJ (United States)] (ORCID:0000000256562075). 2026-02-17. Unraveling In-Situ Formation of Surface Nickel Nitride Structures in Plasma-Assisted Catalytic Ammonia Synthesis. https://doi.org/10.1021/acs.jpclett.5c03923
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