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Progress Toward a Bulk Micromachined Tunneling Tip Microaccelerometer

Ultrasensitive accelerometers are needed for microgravity measurement of orbital drag and active isolation systems. We have designed an accelerometer capable of measuring accelerations of the order of 10(i) g. A tunneling tip sensor can be used as a position sensor with a potential performance advantage of two orders of magnitude over capacitive sensors. In this paper, we disclose our progress in the fabrication and measurement of a bulk microaccelerometer which employs a tunneling tip. Fully assembled accelerometers consisting of four separate die have been fabricated. The device employs a unique folded spring system with a low spring constant. To protect the tunneling tip, we have employed electrostatic clamping. Stiction has not been observed, but the required clamping voltage is greater than expected. We have developed a simple model to analyze our results.

micromachining, microaccelerometer↗

Silicon micromachined accelerometer/seismometer and method of making the same

A silicon-based microaccelerometer for seismic application is provided using a low-resonant frequency (10 Hz), large proof mass (1 gram), and high Q suspension to achieve high sensitivity of less than 1 ng with a bandwidth a 0.05 to 50 Hz. The proof mass is cut away from a planar substrate in the form of a disk using abrasive cutting, which disk closely fits but does not touch a surrounding angular frame. The spring of the microaccelerometer between the angular frame and the proof mass is provided from two continuous, 3 microns thick membranes. The fixed capacitive electrodes are provided on separate, subsequently bonded substrates, and movable capacitive plates are provided on the membranes. By fabricating capacitive plates on the separate substrates, the gap between the fixed and movable capacitive plates in the differential capacitive sensor is closely controlled. The use of continuous membranes for the spring produces a shock resistant, robust sensor.

Martin, Richard D.↗

A silicon micromachined piezoresistive accelerometer for health and condition monitoring

Silicon micromachining etching techniques were utilized to batch-fabricate hundreds of general purpose microaccelerometers on a single silicon substrate. Piezoresistive sensing elements were aligned to the back-side patterns using an IR mask aligner and then diffused into the areas of maximum stress. Capping of the two-arm cantilever beam structure was achieved using a combination of electrostatic bonding and low temperature glass films. Overrange protection, critical damping, and overall protection from the outside environment are achieved by controlling the cavity depths of the top and bottom covers. Temperature compensation, amplification, and filtering are performed by a companion LSI chip that is interfaced to the accelerometer by conventional wire-bonding techniques.

Walsh, Kevin M.↗

An all-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process

This paper reports an all-silicon fully symmetrical z-axis micro-g accelerometer that is fabricated on a single-silicon wafer using a combined surface and bulk fabrication process. The microaccelerometer has high device sensitivity, low noise, and low/controllable damping that are the key factors for attaining micro g and sub-micro g resolution in capacitive accelerometers. The microfabrication process produces a large proof mass by using the whole wafer thickness and a large sense capacitance by utilizing a thin sacrificial layer. The sense/feedback electrodes are formed by a deposited 2-3 microns polysilicon film with embedded 25-35 microns-thick vertical stiffeners. These electrodes, while thin, are made very stiff by the thick embedded stiffeners so that force rebalancing of the proof mass becomes possible. The polysilicon electrodes are patterned to create damping holes. The microaccelerometers are batch-fabricated, packaged, and tested successfully. A device with a 2-mm x 1-mm proof mass and a full bridge support has a measured sensitivity of 2 pF/g. The measured sensitivity of a 4-mm x 1-mm accelerometer with a cantilever support is 19.4 pF/g. The calculated noise floor of these devices at atmosphere are 0.23 micro g/sqrt(Hz) and 0.16 micro g/sqrt(Hz), respectively.

Non-NASA Center↗