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At least 19 records

Optimization of Indium Bump Morphology for Improved Flip Chip Devices

Flip-chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices that directly connects an active element or detector to a substrate readout face-to-face, eliminating the need for wire bonding. In order to make conductive links between the two parts, a solder material is used between the bond pads on each side. Solder bumps, composed of indium metal, are typically deposited by thermal evaporation onto the active regions of the device and substrate. While indium bump technology has been a part of the electronic interconnect process field for many years and has been extensively employed in the infrared imager industry, obtaining a reliable, high-yield process for high-density patterns of bumps can be quite difficult. Under the right conditions, a moderate hydrogen plasma exposure can raise the temperature of the indium bump to the point where it can flow. This flow can result in a desirable shape where indium will efficiently wet the metal contact pad to provide good electrical contact to the underlying readout or imager circuit. However, it is extremely important to carefully control this process as the intensity of the hydrogen plasma treatment dramatically affects the indium bump morphology. To ensure the fine-tuning of this reflow process, it is necessary to have realtime feedback on the status of the bumps. With an appropriately placed viewport in a plasma chamber, one can image a small field (a square of approximately 5 millimeters on each side) of the bumps (10-20 microns in size) during the hydrogen plasma reflow process. By monitoring the shape of the bumps in real time using a video camera mounted to a telescoping 12 magnifying zoom lens and associated optical elements, an engineer can precisely determine when the reflow of the bumps has occurred, and can shut off the plasma before evaporation or de-wetting takes place.

Jones, Todd J.

Organic flip chip reliability study for space applications

The current state-of-the-art flip chip packages for space applications are the class-Y non-hermetic ceramic packages, whereas for commercial applications, organic packages have been the mainstream technology for about two decades. The high reliability of the class-Y parts suggests that the hermeticity is not critical for the reliability of flip chip devices and that organic flip chip packages could be reliable enough for space applications. The current report summarizes the result of collaboration between JPL and Cobham semiconductor space solutions to study the reliability of the organic flip chip packages.

Measmer, Rich

Study of bonding methods for flip chip and beam leaded devices

The results are presented of a comprehensive study and evaluation for the bonding of flip chip and beam leaded devices onto hybrid microcircuit substrates used in high reliability space applications. The program included the evaluation of aluminum flip chips, solder (silver/tin) bump chips, gold beam leaded devices, and aluminum beam leaded devices.

Rudd, H. C.

NASA Tech Briefs, May 2011

Topics covered include: 1) Method to Estimate the Dissolved Air Content in Hydraulic Fluid; 2) Method for Measuring Collimator-Pointing Sensitivity to Temperature Changes; 3) High-Temperature Thermometer Using Cr-Doped GdAlO3 Broadband Luminescence; 4)Metrology Arrangement for Measuring the Positions of Mirrors of a Submillimeter Telescope; 5) On-Wafer S-Parameter Measurements in the 325-508-GHz Band; 6) Reconfigurable Microwave Phase Delay Element for Frequency Reference and Phase-Shifter Applications; 7) High-Speed Isolation Board for Flight Hardware Testing; 8) High-Throughput, Adaptive FFT Architecture for FPGA-Based Spaceborne Data Processors; 9) 3D Orbit Visualization for Earth-Observing Missions; 10) MaROS: Web Visualization of Mars Orbiting and Landed Assets; 11) RAPID: Collaborative Commanding and Monitoring of Lunar Assets; 12) Image Segmentation, Registration, Compression, and Matching; 13) Image Calibration; 14) Rapid ISS Power Availability Simulator; 15) A Method of Strengthening Composite/Metal Joints; 16) Pre-Finishing of SiC for Optical Applications; 17) Optimization of Indium Bump Morphology for Improved Flip Chip Devices; 18) Measuring Moisture Levels in Graphite Epoxy Composite Sandwich Structures; 19) Marshall Convergent Spray Formulation Improvement for High Temperatures; 20) Real-Time Deposition Monitor for Ultrathin Conductive Films; 21) Optimized Li-Ion Electrolytes Containing Triphenyl Phosphate as a Flame-Retardant Additive; 22) Radiation-Resistant Hybrid Lotus Effect for Achieving Photoelectrocatalytic Self-Cleaning Anticontamination Coatings; 23) Improved, Low-Stress Economical Submerged Pipeline; 24) Optical Fiber Array Assemblies for Space Flight on the Lunar Reconnaissance Orbiter; 25) Local Leak Detection and Health Monitoring of Pressurized Tanks; 26) Dielectric Covered Planar Antennas at Submillimeter Wavelengths for Terahertz Imaging; 27) Automated Cryocooler Monitor and Control System; 28) Broadband Achromatic Phase Shifter for a Nulling Interferometer; 29) Super Dwarf Wheat for Growth in Confined Spaces; 30) Fine Guidance Sensing for Coronagraphic Observatories; 31) Single-Antenna Temperature- and Humidity-Sounding Microwave Receiver; 32) Multi-Wavelength, Multi-Beam, and Polarization-Sensitive Laser Transmitter for Surface Mapping; 33) Optical Communications Link to Airborne Transceiver; 34) Ascent Heating Thermal Analysis on Spacecraft Adaptor Fairings; 35) Entanglement in Self-Supervised Dynamics; 36) Prioritized LT Codes; 37) Fast Image Texture Classification Using Decision Trees; 38) Constraint Embedding Technique for Multibody System Dynamics; 39) Improved Systematic Pointing Error Model for the DSN Antennas; 40) Observability and Estimation of Distributed Space Systems via Local Information-Exchange Networks; 41) More-Accurate Model of Flows in Rocket Injectors; 42) In-Orbit Instrument-Pointing Calibration Using the Moon as a Target; 43) Reliability of Ceramic Column Grid Array Interconnect Packages Under Extreme Temperatures; 44) Six Degrees-of-Freedom Ascent Control for Small-Body Touch and Go; and 45) Optical-Path-Difference Linear Mechanism for the Panchromatic Fourier Transform Spectrometer.

Source record

Ultra-Thin, Flexible Electronics

Thinned die can be used to realize ultra-thin flexible electronics for applications such as conformal and wearable electronics. Three techniques have been developed to achieve this goal using thinned die: die flip chip bonded onto flexible substrates, die laminated onto LCP films, and die embedded in polyimide. A key to achieving each of these techniques is the thinning of die to a thickness of 50 microns or thinner. Conventional CMP processing can be used to thin to 50 microns. At 50 microns, the active die become flexible and must be handled by temporarily bonding them to a holder die, for further processing. Once bonded face down to the holder die, the active die can be further thinned by DRIE etching the exposed backside. The thinned die can then been packaged in or on the flexible substrate.

electronics packaging

System Miniaturization Via Heterogeneous Integration of Electronic Devices for Deep Space Missions

The scientific devices designed for each of the Outer Planets Program Focuses will likely be groundbreaking not only with respect to their scientific role but also regarding the electronics required to perform such investigations. In the past, the performance of packaged electronics was limited by the components themselves, with minimal influence of the packaging technology. The rapid development of integrated circuit technology, however, has drastically increased the importance of packaging technology in the ultimate performance of devices. If not carefully considered in the overall design, the packaging may become the limiting factor in the operation of the system. Although industry is responsible for several significant accomplishments in the field of electronics packaging, deep space/outer planet missions must take into account additional requirements such as extremely low temperatures, high radiation levels, hermetic sealing, and severe size and weight limitations. Therefore, the present investigation has been designed to meet the needs of NASA's sensor intensive outer planets program by combining (using flip chip technology) an array of devices (including analog, digital, power volt-age, passives, and MEMS) into a miniaturized heterogeneous system and utilizing optical buses to enable autonomy. Additional information is contained in the original extended abstract.

DelCastillo, L.

A 90 GHz Amplifier Assembled Using Flip-Chip Technology

This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.

FET amplifiers Millimeter wave FETs bump-bonding m

Advanced Embedded Active Assemblies for Extreme Space Applications

This work describes the development and evaluation of advanced technologies for the integration of electronic die within membrane polymers. Specifically, investigators thinned silicon die, electrically connecting them with circuits on flexible liquid crystal polymer (LCP), using gold thermo-compression flip chip bonding, and embedding them within the material. Daisy chain LCP assemblies were thermal cycled from -135 to +85degC (Mars surface conditions for motor control electronics). The LCP assembly method was further utilized to embed an operational amplifier designed for operation within the Mars surface ambient. The embedded op-amp assembly was evaluated with respect to the influence of temperature on the operational characteristics of the device. Applications for this technology range from multifunctional, large area, flexible membrane structures to small-scale, flexible circuits that can be fit into tight spaces for flex to fit applications.

lead bonding

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the design and construction of a test setup for the experiment and then appropriate characterization of the test system. Specifically, I am involved in the characterization of a commercially available 1550nm wavelength, 5mW diode laser and a study of its modulation bandwidth. Commercially produced photodetectors as well as the incorporation of microwave technology, in the form of RF input and output, are used in the characterization procedure. The next stage involves the use of a probe station and network analyzer to characterize and test a series of photodetectors fabricated on a 2 inch, Indium Gallium Arsenide (InGaAs) wafer in the Branch s microlithography lab. Other project responsibilities include, but are not limited to the incorporation of a transimpedance amplifier to the photodetector circuit; a study of VCSEL technology; bit error rate analysis of an optical interconnect system; and analysis of free space divergence of the VCSEL, optical path length of the interconnect; and any other pertinent optical properties of the one gigabit per second interconnect for fabrication and testing.

Savich, Gregory R.

New Technology for Microfabrication and Testing of a Thermoelectric Device for Generating Mobile Electrical Power

We report the results of fabrication and testing of a thermoelectric power generation module. The module was fabricated using a new "flip-chip" module assembly technique that is scalable and modular. This technique results in a low value of contact resistivity ( < or = 10(exp 5) Ohms-sq cm). It can be used to leverage new advances in thin-film and nanostructured materials for the fabrication of new miniature thermoelectric devices. It may also enable monolithic integration of large devices or tandem arrays of devices on flexible or curved surfaces. Under mild testing, a power of 22 mW/sq cm was obtained from small (<100 K) temperature differences. At higher, more realistic temperature differences, approx.500 K, where the efficiency of these materials greatly improves, this power density would scale to between 0.5 and 1 Watt/cm2. These results highlight the excellent potential for the generation and scavenging of electrical power of practical and usable magnitude for remote applications using thermoelectric power generation technologies.

Prasad, Narashimha S.

SEU In An Advanced Bipolar Integrated Circuit

Report summarizes investigation of single-event upsets (SEU) in bipolar integrated-circuit set of flip-flops (memory cells). Device tested made by advanced digital bipolar silicon process of Honeywell, Inc. Circuit chip contained 4 cells. Construction enabled study of effect of size on SEU behavior. Each cell externally biased so effect of bias current on SEU behavior. Results of study provides important information for optimal design of devices fabricated using buried-layer bipolar process operating in heavy-ion SEU environments. Designers use information to provide required levels of suppression of SEU in specific applications via combinations of size and/or cell-current scaling.

Zoutendyk, John A.

Development of chip passivated monolithic complementary MISFET circuits with beam leads

The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.

Ragonese, L. J.

Noncontact excitation of multi-GHz lithium niobate electromechanical resonators

Abstract The demand for high-performance electromechanical resonators is ever-growing across diverse applications, ranging from sensing and time-keeping to advanced communication devices. Among the electromechanical materials being explored, thin-film lithium niobate stands out due to its strong piezoelectric properties and low acoustic loss. However, in nearly all existing lithium niobate electromechanical devices, the configuration is such that the electrodes are in direct contact with the mechanical resonator. This configuration introduces an undesirable mass-loading effect, producing spurious modes and additional damping. Here, we present an electromechanical platform that mitigates this challenge by leveraging a flip-chip bonding technique to separate the electrodes from the mechanical resonator. By offloading the electrodes from the resonator, our approach yields a substantial increase in the quality factor of these resonators, paving the way for enhanced performance and reliability for their device applications.

Instruments & Instrumentation

Aeroflex Technology as Class-Y Demonstrator

Modern space field programmable gate array (FPGA) devices with increased functional density and operational frequency, such as Xilinx Virtex 4 (V4) and S (V5), are packaged in non-hermetic ceramic flip chip forms. These next generation space parts were not qualified to the MIL-PRF-38535 Qualified Manufacturer Listing (QML) class-V when they were released because class-V was only intended for hermetic parts. In order to bring Xilinx V5 type packages into the QML system, it was suggested that class-Y be set up as a new category. From 2010 through 2014, a JEDEC G12 task group developed screening and qualification requirements for Class-Y products. The Document Standardization Division of the Defense Logistics Agency (DLA) has completed an engineering practice study. In parallel with the class-Y efforts, the NASA Electronic Parts and Packaging (NEPP) program has funded JPL to study potential reliability issues of the class-Y products. The major hurdle of this task was the absence of adequate research samples. Figure 1-1 shows schematic diagrams of typical structures of class-Y type products. Typically, class-Y products are either in ceramic flip chip column grid array (CGA) or land grid array (LGA) form. In class-Y packages, underfill and heat spread adhesive materials are directly exposed to the spacecraft environment due to their non-hermeticity. One of the concerns originally raised was that the underfill material could degrade due to the spacecraft environment and negatively impact the reliability of the package. In order to study such issues, it was necessary to use ceramic daisy chain flip chip package samples so that continuity of flip chip solder bumps could be monitored during the reliability tests. However, none of the commercially available class-Y daisy chain parts had electrical connections through flip chip solder bumps; only solder columns were daisy chained, which made it impossible to test continuity of flip chip solder bumps without using extremely costly functional parts. Among space parts manufacturers who were interested in producing class-Y products, Aeroflex Microelectronic Solutions-HiRel had been developing assembly processes using their internal R&D classy type samples. In early 2012, JPL and Aeroflex initiated a collaboration to study reliability of the Aeroflex technology as a class-Y demonstrator.

Suh, Jong-ook

Process development of beam-lead silicon-gate COS/MOS integrated circuits

Two processes for the fabrication of beam-leaded COS/MOS integrated circuits are described. The first process utilizes a composite gate dielectric of 800 A of silicon dioxide and 450 A of pyrolytically deposited A12O3 as an impurity barrier. The second process utilizes polysilicon gate metallization over which a sealing layer of 1000 A of pyrolytic Si3N4 is deposited. Three beam-lead integrated circuits have been implemented with the first process: (1) CD4000BL - three-input NOR gate; (2) CD4007BL - triple inverter; and (3) CD4013BL - dual D flip flop. An arithmetic and logic unit (ALU) integrated circuit was designed and implemented with the second process. The ALU chip allows addition with four bit accuracy. Processing details, device design and device characterization, circuit performance and life data are presented.

Baptiste, B.

C-MOS array design techniques

The entire complement of standard cells and components, except for the set-reset flip-flop, was completed. Two levels of checking were performed on each device. Logic cells and topological layout are described. All the related computer programs were coded and one level of debugging was completed. The logic for the test chip was modified and updated. This test chip served as the first test vehicle to exercise the standard cell complementary MOS(C-MOS) automatic artwork generation capability.

Feller, A.

Increasing Radon Daughter Plate-out onto Superconducting Qubits

Radon daughter plate-out may pose a fundamental limitation to realizing large-scale superconducting quantum computers. Radon daughters plated-out onto a superconducting qubit chip can decay, releasing energy into the substrate, producing phonons. Phonon induced quasiparticles generate bit flip errors and reduce coherence times. We seek to increase plate-out on chips to enable future study of the impact of Radon on coherence times. In this project, we utilize COMSOL Multiphysics simulations to finalize design for a device to increase radon plate-out.

Kay, Dax [Northwestern U.]