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Optimization of X-ray Absorbers for High-Resolution TES Detectors in NewATHENA X-IFU

NewATHENA’s X-ray Integral Field Unit (X-IFU) uses a large-format array of Transition Edge Sensor (TES) microcalorimeters coupled with absorbers made of gold and bismuth providing 4 eV FWHM resolution up to 7 keV in the 0.2- 12 keV band. X-ray absorbers must be thick enough for photon absorption, maintain low heat capacity for energy resolution, and have good thermalization properties. The X-IFU requires total Quantum Efficiency (QE) of 96%, 87%, and 63% at 1, 7, and 9.5 keV, respectively. Optimal thicknesses are 1.05 µm gold and 5.5 µm bismuth to achieve 0.731 pJ/K at 90 mK and 87% QE at 7 keV. While typical TES absorbers are 3-4 µm thick, producing the required 5.5 µm Bi absorbers via standard electroplating creates enlarged grains and surface roughness. The increased roughness and grain size variability produced with our standard recipe have resulted in instances of 1) low energy spectral tails 2) spectral broadening of the energy resolution and 3) thermal shorts between pixels when a large grain bridges the gap between absorbers. In this study, we have introduced a new fabrication process and altered the morphology of the thick Bi through changes in the electroplating process. The process changes are intended to address all three issues as well as reduce particulate contamination observed on the finished detector arrays.

Absorber

Combinatorial deposition of Au–Bi alloys via high-rate magnetron sputtering

Gold–bismuth (Au–Bi) alloy films are promising candidate materials for inertial confinement fusion (ICF) hohlraums due to their high laser-to-x-ray conversion efficiency, particularly compared with Au, Ta–Au, and Bi hohlraums. However, the fabrication of uniform and dense Au–Bi alloy films remains a challenge. Here, we use a combination of Monte-Carlo modeling and experiments to demonstrate that the microstructure and properties of Au–Bi alloy films can be greatly improved when direct-current magnetron sputtering with high deposition rates of ⩾5 μm h -1 is used. Resultant films are ~90% of their maximum theoretical densities and have low O content of <1 at.%. Films with Bi content above 40 at. % exhibit high electrical resistivity >100μΩ cm, making them suitable for both magnetized and non-magnetized ICF schemes.

Materials science