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Implementing Connected Component Labeling as a User Defined Operator for SciDB

We have implemented a flexible User Defined Operator (UDO) for labeling connected components of a binary mask expressed as an array in SciDB, a parallel distributed database management system based on the array data model. This UDO is able to process very large multidimensional arrays by exploiting SciDB's memory management mechanism that efficiently manipulates arrays whose memory requirements far exceed available physical memory. The UDO takes as primary inputs a binary mask array and a binary stencil array that specifies the connectivity of a given cell to its neighbors. The UDO returns an array of the same shape as the input mask array with each foreground cell containing the label of the component it belongs to. By default, dimensions are treated as non-periodic, but the UDO also accepts optional input parameters to specify periodicity in any of the array dimensions. The UDO requires four stages to completely label connected components. In the first stage, labels are computed for each subarray or chunk of the mask array in parallel across SciDB instances using the weighted quick union (WQU) with half-path compression algorithm. In the second stage, labels around chunk boundaries from the first stage are stored in a temporary SciDB array that is then replicated across all SciDB instances. Equivalences are resolved by again applying the WQU algorithm to these boundary labels. In the third stage, relabeling is done for each chunk using the resolved equivalences. In the fourth stage, the resolved labels, which so far are "flattened" coordinates of the original binary mask array, are renamed with sequential integers for legibility. The UDO is demonstrated on a 3-D mask of O(1011) elements, with O(108) foreground cells and O(106) connected components. The operator completes in 19 minutes using 84 SciDB instances.

UDO

New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

Lieneweg, Udo

Formula Gives Better Contact-Resistance Values

Lateral currents in contact strips taken into account. Four-terminal test structures added to intergrated circuits to enable measurement of interfacial resistivities of contacts between thin conducting layers. Thin-film model simplified quasi-two-dimensional potential model that accounts adequately for complicated three-dimensional, nonuniform current densitites. Effects of nonuniformity caused by lateral current flow in strips summarized in equivalent resistance Rs and voltage Vs.

Lieneweg, Udo

DEDIX 87 - A supervisory system for design diversity experiments at UCLA

To establish a long-term research facility for further experimental investigations of design diversity as a means of achieving fault-tolerant systems, the DEDIX (Design Diversity Experiment) system, a distributed supervisor and testbed for multiversion software, was designed and implemented by researchers at the UCLA Dependable Computing and Fault-Tolerant Systems Laboratory. DEDIX is available on the Olympus local network, which utilizes the Locus distributed operating system to operate a set of several VAX 11/750 computers at the UCLA Center for Experimental Computer Science. DEDIX is portable to any machine which runs a Unix operating system. The DEDIX system is described and its applications are discussed in this paper. A review of current research is also presented.

Avizienis, Algirdas

Chain Of Test Contacts For Integrated Circuits

Test structure forms chain of "cross" contacts fabricated together with large-scale integrated circuits. If necessary, number of such chains incorporated at suitable locations in integrated-circuit wafer for determination of fabrication yield of contacts. In new structure, resistances of individual contacts determined: In addition to making it possible to identify local defects, enables generation of statistical distributions of contact resistances for prediction of "parametric" contact yield of fabrication process.

Lieneweg, Udo

Experiences in extraction of contact parameters from process-evaluation test-structures

Six-terminal-contact test structures are introduced for characterizing ohmic contacts between a metal and a heavily doped semiconductor layer. Specifically, the six-terminal test structure supplies the additional information needed in order to calculate the transmission length and eventual corrections to the characteristic resistance per unit width due to finite contact length. The essential feature of this test structure is a square contact with four taps in the lower (semiconductor) layer. Every other one of these taps is used for current injection ('front'). From the voltage drop at the opposite tap and the side taps, the 'end' resistance and the 'side' resistances are calculated. The test structures are shown to give valuable information complementary to the common front resistance measurements. The interfacial resistivity is obtained directly after proper correction for flange effects.

Lieneweg, Udo

Systematic generation of multibody equations of motion suitable for recursive and parallel manipulation

The formulation of a method known as the joint coordinate method for automatic generation of the equations of motion for multibody systems is summarized. For systems containing open or closed kinematic loops, the equations of motion can be reduced systematically to a minimum number of second order differential equations. The application of recursive and nonrecursive algorithms to this formulation, computational considerations and the feasibility of implementing this formulation on multiprocessor computers are discussed.

Nikravesh, Parviz E.

Comparison between analytical models and finite-difference simulations in transmission-line tap resistors and L-type cross-Kelvin resistors

Approximate analytical models of the transmission-line tap resistor and the cross-Kelvin resistor are compared with computer-simulated pseudo-three-dimensional resistor network models. The analytical formulas are in good agreement with the simulations over a useful range of parameters and are readily applied to the extraction of the contact resistivity and the sheet resistances of the semiconducting layer under and outside the contacts. The extraction procedure, which is easily implemented on a personal computer, is carried out for the case of alloyed AuGeNi/GaAs contacts, illustrating the importance of (1) distinguishing between layer sheet resistance under and outside the contacts and (2) considering two-dimensional current flow in the semiconducting layer.

Scorzoni, Andrea

Flange Correction For Metal-To-Metal Contacts

Improved mathematical model provides correction for flange effect in estimating resistance of square contact between two metal layers from standard four-terminal measurements. Extended version of one developed previously for contact between metal layer and semiconductor layer, wherein flange effect important in semiconductor layer only. Here flange effect in both metal layers significant. Interfacial resistances extracted more accurately.

Lieneweg, Udo

Cross-Quint-Bridge Resistor

Integrated-circuit conductive test pattern intended to provide data on effects of design widths and design spacings upon actual widths of conductive lines. Provides for electrical measurements both on lines of unknown width and on features having known dimensions. Data from measurements on five bridges used to determine four parameters of mathematical model describing system. In principle, pattern determines effects of width and spacing and interaction between them.

Hannaman, David J.

Barrier/n/n+ Varactor Frequency Multipliers

Barrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).

Lieneweg, Udo

Modeling of planar varactor frequency multiplier devices with blocking barriers

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Lieneweg, Udo

SRAM As An Array Of Energetic-Ion Detectors

Static random-access memory (SRAM) designed for use as array of energetic-ion detectors. Exploits well-known tendency of incident energetic ions to cause bit flips in cells of electronic memories. Design of ion-detector SRAM involves modifications of standard SRAM design to increase sensitivity to ions. Device fabricated by use of conventional complementary metal oxide/semiconductor (CMOS) processes. Potential uses include gas densimetry, position sensing, and measurement of cosmic-ray spectrum.

Buehler, Martin G.

Computing Misalignments From Measured Contact Resistances

Misalignments of contacts in integrated circuits computed, and measured contact resistances corrected for effects of misalignments by use of method based on relatively simple mathematical model of measured contact resistance. Flange resistance of aligned contact multiplied by semiempirical factor. Method particularly useful in estimating effects of misalignments on four- and six-terminal (Kelvin-tap) contact-resistance measurements taken with L-shaped test structures.

Lieneweg, Udo

Planar varactor frequency multiplier devices with blocking barrier

The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.

Lieneweg, Udo

Global precipitation estimates based on a technique for combining satellite-based estimates, rain gauge analysis, and NWP model precipitation information

The 'satellite-gauge model' (SGM) technique is described for combining precipitation estimates from microwave satellite data, infrared satellite data, rain gauge analyses, and numerical weather prediction models into improved estimates of global precipitation. Throughout, monthly estimates on a 2.5 degrees x 2.5 degrees lat-long grid are employed. First, a multisatellite product is developed using a combination of low-orbit microwave and geosynchronous-orbit infrared data in the latitude range 40 degrees N - 40 degrees S (the adjusted geosynchronous precipitation index) and low-orbit microwave data alone at higher latitudes. Then the rain gauge analysis is brougth in, weighting each field by its inverse relative error variance to produce a nearly global, observationally based precipitation estimate. To produce a complete global estimate, the numerical model results are used to fill data voids in the combined satellite-gauge estimate. Our sequential approach to combining estimates allows a user to select the multisatellite estimate, the satellite-gauge estimate, or the full SGM estimate (observationally based estimates plus the model information). The primary limitation in the method is imperfections in the estimation of relative error for the individual fields. The SGM results for one year of data (July 1987 to June 1988) show important differences from the individual estimates, including model estimates as well as climatological estimates. In general, the SGM results are drier in the subtropics than the model and climatological results, reflecting the relatively dry microwave estimates that dominate the SGM in oceanic regions.

Huffman, George J.

The Global Precipitation Climatology Project (GPCP) Combined Precipitation Dataset

The Global Precipitation Climatology Project (GPCP) has released the GPCP Version 1 Combined Precipitation Data Set, a global, monthly precipitation dataset covering the period July 1987 through December 1995. The primary product in the dataset is a merged analysis incorporating precipitation estimates from low-orbit-satellite microwave data, geosynchronous-orbit -satellite infrared data, and rain gauge observations. The dataset also contains the individual input fields, a combination of the microwave and infrared satellite estimates, and error estimates for each field. The data are provided on 2.5 deg x 2.5 deg latitude-longitude global grids. Preliminary analyses show general agreement with prior studies of global precipitation and extends prior studies of El Nino-Southern Oscillation precipitation patterns. At the regional scale there are systematic differences with standard climatologies.

Huffman, George J.