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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

Lock, K.↗
NASA NTRS1972

Development of high speed power thyristor: The gate assisted turn-off thyristor

A high speed power switch with unique turn-off capability was developed. This gate-assisted turn-off thyristor was rated at 609 V and 50 A with turn-off times of 2 microsec. Twenty-two units were delivered for evaluation in a series inverter circuit. In addition, test circuits designed to relate to the series inverter application were built and demonstrated.

Hamilton, D. R.↗
NASA NTRS1982

Voltage reapplication rate control for commutation of thyristors

A circuit for commutating a thyristor (21) by shunting its current for a minimum interval, thereby removing sustaining voltage to said thyristor, then subsequently restoring voltage to said thyristor at a predetermined rate, utilizes a series combination of a commutation electronic switch (22) and an isolated dc voltage supply (23) connected in parallel with the thyristor. The voltage supply is arranged with a polarity that permits the current flowing through the thyristor in one direction to be bypassed through the series combination while the commutation switch is turned on and to reverse bias the thyristor when the commutation switch is fully on. A dv/dt control circuit (24) limits the rate of rise of voltage across the commutation switch (22) as it is turned off in response to a command input signal. The dv/dt control circuit is comprised of a constant current drive (31) and a capacitor (32) connected between the output terminal of the commutation switch and the control input terminal of the commutation switch. The thyristor may be a triac (40) with two commutation switches (42, 43), one for current of each polarity, or with a single commutation switch (55) and a bridge circuit (52-55) for selecting the polarity of the switch (56).

Rippel, Wally E.↗
NASA NTRS1975

Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor

Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, and turns on in little more than 2 microsec with only 2A of gate drive. Its features include a turn-off time of 3 microsec achieved with 2A of gate assist current of a few microseconds duration and an energy dissipation of only 12 mJ per pulse for a 20 microsec half sine wave, 200A pulse. Extensive theoretical and experimental study of the electrical behavior of thyristors having a fast turn-off time have significantly improved the understanding of the physics of turning thyristor off. Thyristors of two new designs were fabricated and evaluated. The high speed and low power were achieved by a combination of gate amplification, cathode shunting, and gate-assisted turn-off. Two techniques for making this combination practical are described.

Schlegel, E. S.↗
NASA NTRS1984

Pulsed thyristor trigger control circuit

A trigger control circuit is provided for producing firing pulses for the thyristor of a thyristor control system such as a power factor controller. The control circuit overcomes thyristor triggering problems involved with the current lag associated with controlling inductive loads and utilizes a phase difference signal, already present in the power factor controller, in deriving a signal for inhibiting generation of a firing pulse until no load current is flowing from the preceding half cycle and thereby ensuring that the thyristor is triggered on during each half cycle.

Nola, F. J.↗
NASA NTRS1977

Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor

The results of a program to develop a fast high power thyristor that can operate in switching circuits at frequencies of 10 to 20 kHz with very low power loss are given. Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, turns on in little more than 2 more microseconds with only 2A of gate drive, turns off in 3 microseconds with 2A of gate assist current and has an energy dissipation of only 12 mJ per pulse for a 20 microsecond half sine wave 200A pulse. Data were generated that clearly showed the tradeoffs that can be made between the turn off time and forward drop. The understanding of this relationship is necessary in the selection of deliverable thyristors with turn off times up to 7 microseconds to give improved efficiency in a series resonant dc to dc inverter application.

Schlegel, E. S.↗
NASA NTRS2006

Fast Turn-Off Times Observed in Experimental 4H SiC Thyristors

Room temperature measurements of the turn-off time (t(sub q)) are reported for several packaged, npnp developmental power thyristors based on 4H-type SiC and rated 400 V, 2 A. Turn-off is effected by a 50 V pulse of applied reverse voltage, from a state of a steady 1 A forward current. Plots of t(sub q) against the ramp rate (dV(sub AK)/dt) of reapplied forward voltage are presented for preset values of limiting anode-to-cathode voltage (V(sub AK,max)). The lowest t(sub q) measured was about 180 ns. A rapid rise of these t(sub q) curves was observed for values of V(sub AK,max) that are only about a fifth of the rated voltage, whereas comparative t(sub q) plots for a commercial, fast turn-off, Si-based thyristor at a proportionately reduced V(sub AK,max) showed no such behavior. Hence these SiC thyristors may have problems arising from material defects or surface passivation. The influence the R-C-D gate bypass circuit that was used is briefly discussed.

Niedra, Janis M.↗
NASA NTRS1972

High voltage and current, gate assisted, turn-off thyristor development

An improved high speed power switch with unique turn-off capability was developed. This gate assisted turn-off thyristor (GATT) was rated 1000 volts and 100 amperes with turn-off times of 2 microseconds. Fifty units were delivered for evaluation. In addition, test circuits designed to relate to the series inverter application were built and demonstrated. In the course of this work it was determined that the basic device design is adequate to meet the static characteristics and dynamic turn-off specification. It was further determined that the turn-on specification is critically dependent on the gate drive circuit due to the distributive nature of the cathode-gate geometry. Future work should emphasize design modifications which reduce the gate current required for fast turn-on, thereby opening the way to higher power (current) devices.

Nowalk, T. P.↗
NASA NTRS1975

Two dimensional thermal and charge mapping of power thyristors

The two dimensional static and dynamic current density distributions within the junction of semiconductor power switching devices and in particular the thyristors were obtained. A method for mapping the thermal profile of the device junctions with fine resolution using an infrared beam and measuring the attenuation through the device as a function of temperature were developed. The results obtained are useful in the design and quality control of high power semiconductor switching devices.

Hu, S. P.↗
NASA NTRS1976

Gate-assisted turnoff thyristors

A study of the turnoff physics in gate-assisted turnoff thyristors (GATT's) leads to a proposed mechanism involving the gate bias acting to prevent a forward voltage from appearing on the cathode rather than, as was previously thought, to sweep out excess carriers. It is shown that cathode shunting can be used in GATT's to virtually eliminate an important failure mode and to decrease the gate voltage needed to produce the desired improvement in turnoff time. Implications for designing GATT's are given, one being that a change in the lateral resistance of the p-base will have opposite effects depending on whether the cathode is shunted or not.

Schlegel, E. S.↗
NASA NTRS1976

Gate assisted turn-off thyristor with cathode shunts and dynamic gate

A 1,000-V, 200-A gate-assisted turn-off thyristor (GATT) is described, whose design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The device physics of gate-assisted turn-off are reviewed. Based on this, improvements in the design are described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 microsec are obtained. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.

Schlegel, E. S.↗
NASA NTRS1978

Gate-assisted turn-off thyristor

1,000-volt, 200-ampere gate-assisted turn-off thyristor has been developed for power circuits requiring high efficiency, small size, and low weight. Design features include shunted cathode for high dV/dt capability. Cathode in interdigitated with dynamic gate for fast, low-loss switching. Operating frequency exceeds 20 kHz with overall energy dissipation of less that 12 mJ per pulse for typical 20-microsecond half-sine waveform. Device has turn-on time of 2 microseconds and turn-off time as short as 3 microseconds with only 2 amperes of gate drive.

Lowry, L. R.↗
NASA NTRS2006

A Current Source Method For t(sub q) Measurement of Fast Switching Thyristors

A current source driven circuit has been constructed to measure the turn-off time (t(sub q)) of fast-switching SiC thyristors. This circuit operates from a single power supply and a dual channel pulse generator to provide adjustment of forward current, magnitude and duration of reverse applied voltage, and rate of rise of reapplied forward voltage. Values of t(sub q) down to 100 ns can be resolved.

Niedra, Janis M.↗
NASA NTRS1996

Silicon carbide thyristor

The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

Edmond, John A.↗
NASA NTRS1986

Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

Edwards, Dean B.↗