NASA NTRS · 19780000004
Gate-assisted turn-off thyristor
Abstract
1,000-volt, 200-ampere gate-assisted turn-off thyristor has been developed for power circuits requiring high efficiency, small size, and low weight. Design features include shunted cathode for high dV/dt capability. Cathode in interdigitated with dynamic gate for fast, low-loss switching. Operating frequency exceeds 20 kHz with overall energy dissipation of less that 12 mJ per pulse for typical 20-microsecond half-sine waveform. Device has turn-on time of 2 microseconds and turn-off time as short as 3 microseconds with only 2 amperes of gate drive.
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Lowry, L. R., Page, D. J., Schlegel, E. S.. 1978-06-01. Gate-assisted turn-off thyristor. https://ntrs.nasa.gov/citations/19780000004
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