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Existing and future solid state nonvolatile memory technologies are described and evaluated in this report. Solid state memory technologies can offer size, speed, power, weight, and ruggedness advantages over conventional moving media storage technologoies such as disk or tape. This technology list is a broad sampling of past, present, emerging, and future solid state memory technologies.
An interleaved, solid state expanded memory for a 100 MHz bandwidth waveform recorder is described. The memory development resulted in a significant increase in the storage capacity of a commercially available recorder. The motivation for the memory expansion of the waveform recorder, which is used to support in-flight measurement of the electromagnetic characteristics of lightning discharges, was the need for a significantly longer data window than that provided by the commercially available unit. The expanded recorder provides a data window that is 128 times longer than the commercial unit, while maintaining the same time resolution, by increasing the storage capacity from 1024 to 131 072 data samples. The expanded unit operates at sample periods as small as 10 ns. Sampling once every 10 ns, the commercial unit records for about 10 microseconds before the memory is filled, whereas, the expanded unit records for about 1300 microseconds. A photo of the expanded waveform recorder is shown.
A modular concept with three separate modules roughly separating bubble domain technology, control logic technology, and power supply technology was employed. These modules were respectively the standard memory module (SMM), the data control unit (DCU), and power supply module (PSM). The storage medium was provided by bubble domain chips organized into memory cells. These cells and the circuitry for parallel data access to the cells make up the SMM. The DCU provides a flexible serial data interface to the SMM. The PSM provides adequate power to enable one DCU and one SMM to operate simultaneously at the maximum data rate. The SSM was designed to handle asynchronous data rates from dc to 1.024 Mbs with a bit error rate less than 1 error in 10 to the eight power bits. Two versions of the SSM, a serial data memory and a dual parallel data memory were specified using the standard modules. The SSM specification includes requirements for radiation hardness, temperature and mechanical environments, dc magnetic field emission and susceptibility, electromagnetic compatibility, and reliability.
Persistent data storage is provided by a computer program product that includes computer program code configured for receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.
Conceptual solid-state memory device nonvolatile and erasable and has only two terminals. Proposed device based on two effects: thermal phase transition and reversible intercalation of ions. Transfer of sodium ions between source of ions and electrical switching element increases or decreases electrical conductance of element, turning switch "on" or "off". Used in digital computers and neural-network computers. In neural networks, many small, densely packed switches function as erasable, nonvolatile synaptic elements.
Proposed devices with nondestructive readout offer attractive alternatives for rugged, solid-state memories suitable for contactless optical addressing and parallel processing and for nonvolatile analog memories. Pulses of light from lasers induce photoresponses in ferroelectric capacitors. Magnitude and polarity of response of each capacitor indicates magnitude and polarity of remanent polarization which, in turn, represents datum stored in that memory cell.
Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) – which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO 2 or Al 2 O 3 )/inert cathode device – possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. In this paper, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO 2 , we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. Finally, the time to threshold is shown to be a function of both the voltage stress (V stress ) as well as the initial leakage current (I 0 ) through the device.
Oxide–based resistive–switching devices hold promise for solid–state memory technology. Information encoding is accomplished by electrically switching the device between two nonvolatile states with low and high resistance states (LRS/HRS). It is generally accepted that the change between these states is due to the motion of oxygen vacancies forming a continuous (LRS) or gapped (HRS) filament between the electrodes. Direct assessments of filaments are rare due to their small size and the difficulty of locating the filament. Electron microscopy experiments reveal the filament structure and chemistry in TaO 2.0 ± 0.2 –based 150 × 150 nm 2 devices with cross–sectional geometry after forming with power dissipation lower than 1 mW. The filaments appear to be roughly hourglass–shaped with a diameter of less than 10 nm and are composed of Ta–rich and O–poor mostly amorphous material with local compositions as Ta–rich as TaO 0.4 . The as–formed HRS has a gap up to 10 nm wide located next to the anode and composed of nearly stoichiometric TaO 2.5 . The tantalum and oxygen distribution is consistent with filaments formed by the motion of both Ta and O driven by temperature gradients (Soret effect) and an electric field. As a result, this interpretation points towards a new compact model of resistive–switching devices.
GeSb 6 Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb 6 Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s –1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measured growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.
Device employs sensitive photoelectric electrodes and solid-state memory, can be used at visible UV and X ray wavelengths, includes nonmagnetic proximity focusing, and is immune to high energy charged-particle background.
Voice (analog) signal is converted to its digital equivalent and stored in solid state memory. Upon command, memory becomes part of annunciator system which includes other digital logic, digital-to-analog converter, and audio amplifier.
The feasibility study of detection of lightning discharges from a geosynchronous satellite requires adequate ground-based information regarding emission characteristics. In this investigation, a measurement system for collection of S-band emission data is set up and calibrated, and the operations procedures for rapid data collection during a storm activity developed. The system collects emission data in two modes; a digitized, high-resolution, short duration record stored in solid-state memory, and a continuous long-duration record on magnetic tape. Representative lightning flash data are shown. Preliminary results indicate appreciable RF emissions at 2 gHz from both the leader and return strokes portions of the cloud-to-ground discharge with strong peaks associated with the return strokes.
Instrument measures rapidly changing knee of V-I curve with extra care. Portable data logger runs on own batteries. Includes microcomputer, which controls voltage-, current-measurement increment, and solid state memory, which stores data until transferred to EPROM module. Data logger is light, compact and easily caried to remote field locations.
Microprocessor-based system originally developed for anthropometric research merges digital data with video images for storage on video cassette recorder. Combined signals later retrieved and displayed simultaneously on television monitor. System also extracts digital portion of stored information and transfers it to solid-state memory.
NASA's Fast Auroral Snapshot, or 'FAST' satellite, scheduled for launch in 1993, will investigate the plasma physics of the low altitude auroral zone from a 3500-km apogee polar orbit. FAST will give attention to wave, double-layer, and soliton production processes due to electrons and ions, as well as to wave-wave interactions, and the acceleration of electrons and ions by waves and electric fields. FAST will employ an intelligent data-handling system capacle of data acquisition at rates of up to 1 Mb/sec, in addition to a 1-Gbit solid-state memory. The data need be gathered for only a few minutes during passes through the auroral zone, since the most interesting auroral phenomena occur in such narrow regions as auroral arcs, electrostatic shocks, and superthermal electron bursts.
The scientific objective of the NASA Small-class Explorer Mission SAMPEX is summarized. A brief history of the Small Explorer program is provided along with a description of the SAMPEX project development and structure. The spacecraft and scientific instrument configuration is presented. The orbit of SAMPEX has an altitude of 520 by 670 km and an 82 deg inclination. Maximum possible power is provided by articulated solar arrays that point continuously toward the sun. Highly sensitive science instruments point generally toward the local zenith, especially over the terrestrial poles, in order to measure optimally the galactic and solar cosmic ray flux. Energetic magnetospheric particle precipitation is monitored at lower geomagnetic latitudes. The spacecraft uses several innovative approaches including an optical fiber bus, powerful onboard computers, and large solid state memories (instead of tape recorders). Spacecraft communication and data acquisition are discussed, and the space- and ground-segment data flows are summarized. A mission lifetime of 3 years is sought with the goal of extending data acquisition over an even longer portion of the 11-year solar activity cycle.
Two SEASIS experiment objectives are key: take images that allow three axis attitude determination and take multi-spectral images of the earth. During the tether mission it is also desirable to capture images for the recoiling tether from the endmass perspective (which has never been observed). SEASIS must store all its imagery taken during the tether mission until the earth downlink can be established. SEASIS determines attitude with a panoramic camera and performs earth observation with a telephoto lens camera. Camera video is digitized, compressed, and stored in solid state memory. These objectives are addressed through the following architectural choices: (1) A camera system using a Panoramic Annular Lens (PAL). This lens has a 360 deg. azimuthal field of view by a +45 degree vertical field measured from a plan normal to the lens boresight axis. It has been shown in Mr. Mark Steadham's UAH M.S. thesis that his camera can determine three axis attitude anytime the earth and one other recognizable celestial object (for example, the sun) is in the field of view. This will be essentially all the time during tether deployment. (2) A second camera system using telephoto lens and filter wheel. The camera is a black and white standard video camera. The filters are chosen to cover the visible spectral bands of remote sensing interest. (3) A processor and mass memory arrangement linked to the cameras. Video signals from the cameras are digitized, compressed in the processor, and stored in a large static RAM bank. The processor is a multi-chip module consisting of a T800 Transputer and three Zoran floating point Digital Signal Processors. This processor module was supplied under ARPA contract by the Space Computer Corporation to demonstrate its use in space.
All International Space Station (ISS) Ku-band telemetry transmits through the High-Rate Communications Outage Recorder (HCOR). The HCOR provides the recording and playback capability for all payload, science, and International Partner data streams transmitting through NASA's Ku-band antenna system. The HCOR is a solid-state memory recorder that provides recording capability to record all eight ISS high-rate data during ISS Loss-of-Signal periods. NASA payloads in the Destiny module are prime users of the HCOR; however, NASDA and ESA will also utilize the HCOR for data capture and playback of their high data rate links from the Kibo and Columbus modules. Marshall Space Flight Center's Payload Operations Integration Center manages the HCOR for nominal functions, including system configurations and playback operations. The purpose of this paper is to present the nominal operations plan for the HCOR and the plans for handling contingency operations affecting payload operations. In addition, the paper will address HCOR operation limitations and the expected effects on payload operations. The HCOR is manifested for ISS delivery on flight 9A with the HCOR backup manifested on flight 11A. The HCOR replaces the Medium-Rate Communications Outage Recorder (MCOR), which has supported payloads since flight 5A.1.