NASA NTRS · 19930000495
Rapid, Nondestructive Readout From Ferroelectric Memory
Abstract
Proposed devices with nondestructive readout offer attractive alternatives for rugged, solid-state memories suitable for contactless optical addressing and parallel processing and for nonvolatile analog memories. Pulses of light from lasers induce photoresponses in ferroelectric capacitors. Magnitude and polarity of response of each capacitor indicates magnitude and polarity of remanent polarization which, in turn, represents datum stored in that memory cell.
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Thakoor, Sarita. 1993-09-01. Rapid, Nondestructive Readout From Ferroelectric Memory. https://ntrs.nasa.gov/citations/19930000495
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