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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Measurement of Poly-Si Film Thickness on Textured Surfaces by X-Ray Diffraction in Poly-Si/SiOx Passivating Contacts for Monocrystalline Si Solar Cells

Polycrystalline Silicon on tunneling silicon oxide (poly-Si/SiOx) passivating contacts have shown great potential for the next-generation monocrystalline Si (c-Si) industrial photovoltaic technology. However, these cells typically suffer from strong parasitic absorption in the thick front poly-Si layer, which is designed to reduce metal-induced recombination. In previous work, we demonstrated an improved short-circuit current density, Jsc, by thinning the front poly-Si film in an SF6 plasma using the front metal grids as a self-aligned mask, but the sub - 100 nm thick poly-Si film is difficult to measure on an alkaline textured surface. Conventional optical techniques such as spectroscopic ellipsometry cannot be used due to the high scattering nature of the random pyramids. At poly-Si thicknesses below 50 nm, secondary electron microscopy (SEM) has difficulty distinguishing the poly-Si from the underlying c-Si substrate. Here, we demonstrate X-ray diffraction as an effective method to quantitatively measure the front poly-Si thickness. The thickness calculated from the diffraction peak height of the Si(111) crystallographic plane agrees well with the cross-section SEM analysis and simulations using SunSolve. We show that by thinning the front poly-Si from 200 to 60 nm, Jsc increased by 2.4 mA/cm2, while maintaining the same Voc. This led to an absolute efficiency gain of 1.73%. In addition, we also discuss possible reasons for the premature loss of passivation before the removal of all poly-Si, which prevented an even higher gain in Jsc.

light/electron beam induced current↗
DOE OSTI2025

BaCu 4/3 Si 2/3 P 2 and BaCu 2–( x + y ) Zn x Si y P 2 : Expanding the Semiconducting Landscape in the ThCr 2 Si 2 -Type Family

ThCr 2 Si 2 -type layered materials are a large family of compounds with applications ranging from thermoelectricity to magnetism, with the vast majority of the members exhibiting metallic behavior. Here, in this study, we synthesized a new group of materials with Cu-Si and Cu-Zn-Si square nets with the general formula BaCu 1.33 Si 0.67 P 2 and BaCu 2–(x+y) Zn x Si y P 2 (0 ≤ x ≤ 0.9; 0.3 ≤ y ≤ 0.7). Several synthesized compounds are charge-balanced semiconductors, which are rare in the ThCr 2 Si 2 family. All the reported compounds crystallize in the ThCr 2 Si 2 -type tetragonal I4/mmm space group, with Cu/Zn/Si jointly occupying the same 4d crystallographic site. In the Zn-free composition, BaCu 1.33 Si 0.67 P 2 , Ba, and P each occupy a single crystallographic site. The introduction of Zn results in the expansion of the unit cell and splitting the Ba atomic sites along the [001] direction. Such structural displacement of the Ba atoms was confirmed by the heat capacity measurements. Band structure and density-of-states calculations on ordered hypothetical structural models reveal either a small bandgap (∼0.2 eV) or semimetallic band structures. The compounds reported here exhibit high Seebeck coefficients and ultralow thermal conductivity, making them promising candidates for the development of thermoelectric materials.

crystal structure↗
DOE OSTI2022

Dopant Compensation within the Intrinsic Poly-Si Isolation Region in Poly-Si/SiOx Passivated IBC Si Solar Cells

We report on the effect of dopant compensation within intrinsic poly-Si regions between p- and n-type fingers of poly-Si/SiOx passivated interdigitated back contact (IBC) solar cells using intrinsic poly-Si as the isolation region between the doped poly-Si fingers. First, we show that dopants from the doped fingers contaminate the intrinsic gap, resulting in doping of the entire intrinsic gap and overlap of the dopant tails from each finger. Next, we show that despite this doping across the gap, shunting between the doped fingers does not occur. We show that this is a result of trap-assisted compensation creating a highly resistive intrinsic region, preventing shunt. We simulate shunt resistance across the gap based on local carrier concentration and deep trap density. We show that trap defects within the poly-Si enhance compensation between the dopant tails. We experimentally confirm these predictions by scanning spreading resistance microscopy of the gap showing ~20 um domain with resistivity ~10^7 ..omega.. cm. Additionally, Kelvin probe force microscopy are compared to finite element simulations which result in the same approximate shape for potential profile, indicating diode behavior across the isolation region. These results demonstrate the powerful effect that trap defects have within the poly-Si isolation region and suggest that precision patterning is not as essential as once thought.

dopant compensation↗
DOE OSTI2025

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗
DOE OSTI2026

First-principles insights into Si substitution effects in Sm 2 (Fe,Si) 17 C x magnet

The partial substitution of Fe by Si enhances the phase stability of Sm 2 Fe 17 C x magnets with x > 1.0. Here, we elucidate the Si-substitution scheme and its impact on phase stability and magnetic properties in Sm 2 (Fe,Si) 17 C 3 from first-principles calculations and chemical bonding analysis. The calculated substitution energies for Si at various Fe sites are negative, indicating improved phase stability. Si preferentially substitutes Fe atoms at the 9d site in Sm 2 (Fe,Si) 17 C 3 while it tends to enter the Fe 18h site in Sm 2 (Fe,Si) 17 . This difference in site preference is attributed to the distinct chemical environments surrounding the Fe (Si) sites in the two compounds. Si substitution favors the formation of Sm–Si bonds while minimizing the Si–C and Si–Si interactions. Crystal orbital Hamilton populations and crystal orbital bond index calculations indicate that the partial replacement of Fe with Si strengthens the chemical bonding of Sm–Fe 3 (18f) and Sm–Fe 4 (18h) and improves overall phase stability in Sm 2 (Fe,Si) 17 C 3 . Beyond the dilution effect, Si substitution also reduces the magnetic moments of neighboring Fe atoms, a phenomenon linked to the strong Fe–Si bonding. These findings highlight the dual role of Si in modifying both the structural and magnetic characteristics of Sm 2 Fe 17 -based magnetic compounds.

Chemical bonding↗
DOE OSTI2025

Flux-Assisted Boron Chalcogen Mixture (BCM) Method for Synthesizing Mixed Chalcogenide Semiconductors (AkRE 2 Si 2 Se x S 8– x and CaRE 2 Si 2 Se 8 ) ( Ak = Ca and Sr; RE = La, Ce, Pr, Nd, and Sm): Investigation of Their Magnetic and Optical Properties

We report a detailed structural analysis of a series of ten quaternary rare-earth-containing seleno-thiosilicates AkRE 2 Si 2 Se x S 8-x and selenosilicates, CaRE 2 Si 2 Se 8 (Ak = Ca and Sr; RE = La, Ce, Pr, Nd, and Sm). Single crystals were obtained by using the flux-assisted boron chalcogen mixture (BCM) method and single crystal X-ray diffraction was used to determine their structures. All members of the AkRE 2 Si 2 Se x S 8-x and CaRE 2 Si 2 Se 8 series crystallize in the space group R$\bar{3}$c (space group number 167) of the trigonal crystal system. The single-crystal X-ray diffraction analysis revealed a strong preference for Se/S atoms to occupy one vs. the other of the two available sites. Polycrystalline samples were used for magnetic susceptibility and UV–visible diffuse reflectance measurements. Magnetic measurements show that CaCe₂Si₂Se₁.₇₃S₆.₂₇ and CaNd₂Si₂Se₂.₅S₅.₅ are paramagnetic with negative Weiss constants (θ = –60.1 and –26.2). Diffuse reflectance analysis gives optical band gaps of 2.7(1) eV (CaLa₂Si₂Se₂.₃₈S₅.₆₂), 2.2(1) eV (CaCe₂Si₂Se₁.₇₃S₆.₂₇), 2.5(1) eV (CaNd₂Si₂Se₂.₅S₅.₅), and 2.0(1) eV (CaCe₂Si₂Se₈), consistent with density functional theory calculations. By partially or fully replacing S sites with Se it was possible to achieve band gap tuning. Photoluminescence behavior was also investigated for CaCe 2 Si 2 Se 1.73 S 6.27 via irradiation with 375 nm ultraviolet light.

BCM method↗
DOE OSTI2023

Influence of cation species on thermal expansion of Y 2 Si 2 O 7 –Gd 2 Si 2 O 7 solid solutions

Mixtures of Y 2 Si 2 O 7 and Gd 2 Si 2 O 7 were synthesized by solid-state reaction at 1600°C and characterized via in situ x-ray diffraction (XRD) to determine their coefficients of thermal expansion (CTE). All solid solutions within the system exhibited the orthorhombic δ-RE 2 Si 2 O 7 (Pna2 1 ) structure. Thermal expansion measurements of Y 2 Si 2 O 7 and Gd 2 Si 2 O 7 correlated well with reported values in literature, and all synthesized solid solutions exhibited CTEs between Y 2 Si 2 O 7 and Gd 2 Si 2 O 7 . Generally, there was a slight decrease in CTE exhibited by the materials with increasing Gd 2 Si 2 O 7 content, with Gd 2 Si 2 O 7 having the lowest CTEs and Y 2 Si 2 O 7 the highest CTEs. Here, the decrease in CTE was attributed to stronger bonds of Gd-O over Y-O, as determined by calculated crystal orbital Hamilton populations using density functional theory. However, such differences were very small and crystal structure was the dominating factor in CTE trends.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Nontrivial nanostructure, stress relaxation mechanisms, and crystallography for pressure-induced Si-I → Si-II phase transformation

Crystallographic theory based on energy minimization suggests austenite-twinned martensite interfaces with specific orientation, which are confirmed experimentally for various materials. Pressure-induced phase transformation (PT) from semiconducting Si-I to metallic Si-II, due to very large and anisotropic transformation strain, may challenge this theory. Here, unexpected nanostructure evolution during Si-I → Si-II PT is revealed by combining molecular dynamics (MD), crystallographic theory, generalized for strained crystals, and in situ real-time Laue X-ray diffraction (XRD). Twinned Si-II, consisting of two martensitic variants, and unexpected nanobands, consisting of alternating strongly deformed and rotated residual Si-I and third variant of Si-II, form {111} interface with Si-I and produce almost self-accommodated nanostructure despite the large transformation volumetric strain of -0.237. The interfacial bands arrest the {111} interfaces, leading to repeating nucleation-growth-arrest process and to growth by propagating {110} interface, which (as well as {111} interface) do not appear in traditional crystallographic theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Understanding the Origin of the Nonpassivating Behavior of Si-Based Anodes during the Initial Cycles

In this contribution, we combined electrochemical cycling and X-ray photoelectron spectroscopy (XPS) to understand the nonpassivating behavior of the solid electrolyte interphase (SEI) on Si anodes during the first cycles. Based on galvanostatic measurements, we show that the irreversible capacity loss is reduced after the first cycle, and it stays almost constant from the second cycle onwards. XPS was used to determine the root causes of the Coulombic inefficiency, showing that the rate of decomposition of the organic solvents strongly decreased after the first cycle, whereas the rate of salt decomposition is almost unchanged between cycles. We determine that the inhibition of the decomposition reaction of the organic solvent is responsible for the lower Coulombic loss during the second electrochemical cycle in comparison to the first, whereas the nonpassivating behavior toward the salt decomposition is one of the main causes of capacity loss upon cycling. Here, we further revisit the role of cracking in contributing to capacity loss. Whereas high volumetric expansion remains an issue plaguing the performance of Si anodes, our chronoamperometry studies reveal that the SEI formed on Si anodes does not passivate even when the electrode is fully expanded, and no additional surface is exposed. Overall, our work establishes the need to address the chemical and electrochemical instability of the SEI on the Si anode in addition to the more notorious issue of cracking.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.

14 SOLAR ENERGY↗
DOE OSTI2022

A New Recycled Al–Si–Mg Alloy for Sustainable Structural Die Casting Applications

The use of secondary aluminum for structural components in the automotive industry is limited by the high Fe contents in recycled alloys which often result in the formation of brittle β-Al 5 FeSi phase which reduces the ductility of aluminum castings. In this study, a new secondary Al-Si-Mg alloy with high Fe content (about 0.44 wt.%) was developed for die casting applications. Based on thermodynamic modeling, manganese was added to obtain a designed Fe-to-Mn ratio of 2 which successfully suppressed the formation of β-Al 5 FeSi phase, by forming α-Al 15 (Fe,Mn) 3 Si 2 phase with rounded or hexagonal morphology. Additionally, a fine needle-like π-Al 8 FeMg 3 Si 2 phase was also formed within the eutectic regions. The new recycled alloy showed comparable mechanical properties in as-cast and heat treated (T5 and T6) conditions to three major primary die cast alloys (≤ 0.2 wt.% Fe) with similar composition. Ductility up to 7.4% from tensile elongation was achieved in as-cast recycled alloy due to the modification and refinement of α-Al 15 (Fe,Mn) 3 Si 2 by Mn and Sr additions. Tensile elongation was further improved to 9.1% after T6 treatment as a result of dissolution of π-Al 8 FeMg 3 Si 2 phase, defragmentation of α-Al 15 (Fe,Mn) 3 Si 2 and the spheroidization of Si phase. This new alloy provides a promising path for increasing usage of recycled aluminum with high Fe content in structural die castings for automotive and other applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Restored Passivation after Complete Removal of Front Poly-Si Between the Grid in Poly-Si/SiO2 Front/Back Cells

This work explores the use of wet chemical etching to completely remove the front poly-Si layer between grid lines of a front/back poly-Si/SiO2 passivated contact device. The purpose of the work is to provide excellent passivation under the metal grid, but to also maximize Jsc by eliminating optical absorption in the front poly-Si. We show that after a high temperature anneal to distribute carriers in the poly-Si/SiO2/c-Si interface all of the poly-Si can be removed selectively with TMAH, using the SiO2 as an etch-stop layer. The etched surface can be repassivated back to its original level with the addition of a SiNx/Al2O3 stack grown on the preserved tunnelling oxide layer followed by a short forming gas anneal. Using symmetric 100 - 200 nm intrinsically doped poly-Si/SiO2 on textured n-type wafer templates we show absolute device efficiency enhancement from 15% to 21% by increasing the Jsc by 12 mA/cm2 after removing the front poly-Si and repassivating while effectively preserving the Voc, and FF of the device. IQE values are similar to PERC devices in the short wavelength range.

etching↗
DOE OSTI2022

A new mechanism of stabilizing SEI of Si anode driven by crosstalk behavior and its potential for developing high performance Si-based batteries

Stabilizing solid electrolyte interphase (SEI) is a key factor for determining cell performance of Silicon (Si) anode, such as safety, cycle lifetime, and calendar lifetime. Here, we found a new potential for stabilizing SEI of the Si anode, driven by crosstalk with cathode material. Here we investigated the effect of crosstalk on the chemistry of SEI of the Si anode as a function of three different, representative cathode materials: LiNi 0.5 Mn 0.3 Co 0.2 O 2 (NMC532), LiNi 0.8 Mn 0.1 Co 0.1 O 2 (NMC811), and LiFePO 4 (LFP). Specifically, we observed that crosstalk significantly affected the formation and growth mechanism of SEI layer on the Si anodes. Unexpectedly, dissolved Fe ions from the LFP cathode has a positive impact on the chemistry and electrochemical stability of the SEI layer of Si anode compared to the other cathodes, resulting in better electrochemical performance in terms of initial coulombic efficiency and capacity fade.

25 ENERGY STORAGE↗
DOE OSTI2022

High-resolution laser-induced fluorescence spectroscopy of 28 Si 16 O + and 29 Si 16 O + in a cryogenic buffer-gas cell

Here, the electronic, laser-induced fluorescence spectrum of the B 2 Σ + ← X 2 Σ + transition in 28 Si 16 O + and 29 Si 16 O + has been recorded in a cryogenic buffer gas cell at K. Molecular constants are extracted for both 28 Si 16 O + and 29 Si 16 O + , including the Fermi contact hyperfine constant for both the B and X states of 29 Si 16 O + , and used in a discussion of the suitability of SiO in future quantum information experiments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Quantifying the Reactivity of Isolated Li x Si Domains in Si Anodes Using Operando NMR

The use of Si anodes can greatly improve the energy density of Li-ion batteries. However, understanding and mitigation of calendar aging remains a barrier to commercialization. Here, in this short report, we utilize operando Nuclear Magnetic Resonance (NMR) spectroscopy to detect and quantify lithium silicides (Li x Si) as they form and react within Si anodes in pouch cells during calendar aging. We provide direct experimental evidence of complex aging phenomena in the Si anodes, including both SEI growth and dissolution during storage. Formation of electrochemically isolated Li x Si is also observed, as indicated by the partial persistence of highly lithiated phases after the cell is discharged. Remarkably, we show that these isolated domains can themselves self-discharge over time, suggesting that their detection can be challenging in post-mortem studies. Finally, we show that aging outcomes depend heavily on the type of silicon particles contained within the electrode, and that certain surface coatings can help decrease the reactivity between lithium silicides and the electrolyte.

Li-ion battery↗