SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Irradiation of refractory uranium dioxide and uranium carbide fuels at high specific powers to high burnups
Postirradiation growth of cultured Chinese hamster cells exposed to UV light, including comparison with X irradiation
Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.
Eight month old C57BL6 mice were exposed (head only) to 0.5 rad or 50 rads of Argon particles at the Lawrence Berkeley Radiation Facility, CA. Neuromotor performance was assessed monthly for six months beginning twelve weeks post-irradiation using a 'string test'. The decline in motor performance was dose-related and none of the animals was able to complete the task after four months of testing. Morphological changes were monitored six and twelve months post-irradiation by light and electron microscopy. The synaptic density in the CA-1 area of the hippocampus decreased six and twelve months after irradiation. The decrease after twelve months was less than after six months. The width of the outer nuclear layer (ONL) of the retina increased with increasing dose. The number of blood vessels between the ONL and the ganglion layer decreased twelve months after irradiation and this area did not show significant accumulation of age pigment.
A polyimide was exposed to 1.0 MeV electron radiation. The radiation-induced radical density and dc conductivity were measured at various post-irradiation times. The radiation-induced radical density was found to be correlated to the increased dc conductivity through a hopping model of conductivity. The post-irradiation radical species were identified.
Hydrazine and 1,1-dimethylhydrazine were radiolyzed at room temperature by using about 1 gram of liquid or 1/2 to 2 liters of vapor at room-temperature vapor pressure. A tungsten-target X-ray source operating at 300 kilovolts and 6 to 8 milliamperes (0.1 to 1.0 A) was used at intensities of 1 times 10 (sup 2) to 1 times 10 (sup 3) roentgens per minute to give total doses of 4.1 rads to 2.3 times 10 (sup 6) rads. The amounts of decomposition were dependent on total dose and independent of dose rate. In the case of hydrazine vapor, the decomposition was also directly related to surface area. There was a lesser surface effect with liquid hydrazine, but this variable was not studied for 1,1-dimethylhydrazine. The order of decreasing sensitivity to X-radiation is as follows: hydrazine vapor, 1,1-dimethylhydrazine vapor, 1,1-dimethylhydrazine liquid, and hydrazine liquid. The decomposition products of hydrazine were nitrogen, hydrogen, ammonia, and unidentified products. The same products plus methylamine, dimethylamine, and hydrazine were found from the decomposition of 1,1-dimethylhydrazine. In addition, the 1,1-dimethylhydrazine underwent post-irradiation changes. Values for G (number of molecules of sample decomposed per 100 electronvolts of absorbed energy) of the order of 10 (sup 6) suggest that the vapor-phase decompositions are chain reactions.
Evidence is given for photorecovery of Anacystis nidulans after exposures to Co 60 gamma radiation. After irradiation the levels of viable cells were higher in cultures kept in white light than in cultures kept dark for 24 hr. The post-irradiation survival rate increase after 30-min exposures to visible light is demonstrated in cultures irradiated with 35 krad. An increase in survival rates was not observed after exposures to ?red' light.
Lithium-doped solar cells have been fabricated with initial lot efficiencies averaging 11.9 percent in an air mass zero (AMO) solar simulator and a maximum observed efficiency of 12.8 percent. The best lithium-doped solar cells are approximately 15 percent higher in maximum power than state-of-the-art n-p cells after moderate to high fluences of 1-MeV electrons and after 6-7 months exposure to low flux irradiation by a Sr-90 beta source, which approximates the electron spectrum and flux associated with near Earth space. Furthermore, lithium-doped cells were found to degrade at a rate only one tenth that of state-of-the-art n-p cells under 28-MeV electron irradiation. Excellent progress has been made in quantitative predictions of post-irradiation current-voltage characteristics as a function of cell design by means of capacitance-voltage measurements, and this information has been used to achieve further improvements in lithium-doped cell design.
Infrared (IR) spectroscopy and tensile modulus testing were used to evaluate the importance of experimental procedure on changes in properties of pyromellitic dianhydride-p,p prime-oxydianiline film exposed to electron radiation. The radiation exposures were accelerated, approximate equivalents to the total dose expected for a 30 year mission in geosynchronous Earth orbit. The change in the tensile modulus depends more on the dose rate and the time interval between exposure and testing than on total dose. The IR data vary with both total dose and dose rate. A threshold dose rate exists below which reversible radiation effects on the IR spectra occur. Above the threshold dose rate, irreversible effects occur with the appearance of a new band. Post-irradiation and in situ IR absorption bands are significantly different. It is suggested that the electron radiation induced metastable, excites molecular states.
The Power Extension Package (PEP) is the prime focus of a development program to produce low cost solar cells. The PEP is a 32 kilowatt flexible substrate, retrievable, solar array system for use on the Space Shuttle. Solar cell cost will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The cost goal is to produce cells below $30 per watt. Two and ten ohm-cm silicon cells were investigated. This paper describes a unique radiation damage test and side-by-side comparison of candidate cell types with pre-and post-irradiation airplane calibration of outer space short-circuit current.
The nature of postirradiation repair in the livers of rats irradiated during hypokinesia is investigated. Hepatocyte population counts, mitotic activity, binuclear cell content, and karyometric studies were done to ascertain the effects of combined hypokinesia and radiation. Hypokinesia is shown to change the nature and rate of post-irradiation changes in the liver, the effect varying with the timing of irradiation relative to the length of hypokinesia. It is concluded that the changes in the compensatory and restorative processes are caused by stress developed in response to isolation and restricted mobility. By changing neuroendocrine system activity, the stress stimulates cell and tissue repair mechanisms at a certain stage essential to the body's reaction of subsequent irradiation.
The PEP is a 32 kilowatt flexible substrate, retrievable, solar array system for use on the Space Shuttle. Solar cell costs will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The cost goal is to produce cells below $30 per watt. Two and ten ohm-cm silicon cells were investigated. In phase I of the cell development program a few thousand candidate cells will be produced and evaluated for utility and quality. In phase II a large number of cells will be fabricated to verify production readiness and cell yields and costs. This schedule is compatible with PEP initial operational capability in 1984. Approximately 140,000 large area (5.9 x 5.9 cm) cells will be required for two PEP solar arrays. The status of the cell development and testing, including a radiation damage test and side-by-side comparison of candidate cell types with pre- and post-irradiation airplane calibration of outer space short-circuit current, is reported.
The Power Extension Package (PEP), a 32-kilowatt, flexible-substrate, retrievable solar array system for use on the Space Shuttle, is described. It is noted that solar cell costs will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The tests that have been carried out on the cells are described, among them a unique radiation damage test and a side-by-side comparison of candidate cell types with pre- and post-irradiation airplane calibration of outer space short-circuit current
Gallium and boron doped silicon solar cells, processed by ion implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their postirradiation recovery by thermal annealing was determined. During the postirradiation anneal, gallium doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures after irradiation. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature is attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.
Three read/write random access memories, AM91L24, HM1-6514, and MWS 5114, were subjected to total dose irradiation at three dose rates, with electrical testing after each increment of dosage. Annealing measurements were performed after the radiation tests were completed. The AM91L24 showed a strong dose rate effect and substantial post-irradiation annealing of radiation-induced damage. The dose rate effect was that a lower dose rate produced less net damage than an eqivalent total dose applied at a higher rate. The HM1-6514 showed essentially no dose rate effect and no annealing damage, and the MWS 5114 exhibited a moderate effect with some annealing. It was concluded that dose rate is an important parameter in radiation test procedures for MOS microcircuits and that annealing measurements may be important evaluation aids for such tests.
The D60T, D62T, and D75T transistors in the nuclear reactor were irradiated with bias voltage and high current I sub c vs. V sub ec curves were obtained to evaluate gain degradation at high power levels. Pre- and post-irradiation high current switching tests were performed to evaluate the response. The gamma ray damage work done at Sandia was correlated with the neutron work done at the O.S.U. reactor with the above specified transistors. Theoretical analyses of damage and electrical performance were conducted in terms of semiconductor physics. The experimental high current pulser was improved in order to measure switching time changes which are less than one microsecond at currents of 100 to 200 amperes for in-situ testing.
The effects of gigarad-level total absorbed doses from 1-MeV electrons on the post-irradiation alternating-current (ac) and direct-current (dc) electrical properties and the unpaired electron densities have been studied for Kapton, Ultem, and Mylar. The unpaired electron densities (determined from electron paramagnetic resonance spectroscopy) and the dc electrical conductivities of the irradiated materials were monitored as functions of time following the exposures to determine their decay characteristics at room temperature. The elevated-temperature ac electrical dissipations of the Ultem and Mylar were affected by the radiation. The dc conductivity of the Kapton increased by five orders of magnitude, while the dc conductivities of the Ultem and Mylar increased by less than an order of magnitude, due to the radiation. The observed radiation-generated changes in the ac electrical dissipations are explained in terms of known radiation-generated changes in the molecular structures of the three materials. A preliminary model relating the dc electrical conductivity and the unpaired electron density in the Kapton is proposed.