Radiation effects on power transistor performance

Abstract

The D60T, D62T, and D75T transistors in the nuclear reactor were irradiated with bias voltage and high current I sub c vs. V sub ec curves were obtained to evaluate gain degradation at high power levels. Pre- and post-irradiation high current switching tests were performed to evaluate the response. The gamma ray damage work done at Sandia was correlated with the neutron work done at the O.S.U. reactor with the above specified transistors. Theoretical analyses of damage and electrical performance were conducted in terms of semiconductor physics. The experimental high current pulser was improved in order to measure switching time changes which are less than one microsecond at currents of 100 to 200 amperes for in-situ testing.