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Stationary magnetic media stores information at densities up to 6.5 Gb/cm(Sup 2). High-density memory devices combine features of advanced rotating-disk magnetic recording and playback systems with compact two-axis high-acceleration linear actuators. New devices weigh less, occupy less space, and consume less power than disk and tape recorders.
Magnetic memory circuitry using metal oxide semiconductor field effect transistors interfaced with plated wire memory
Interface problems between plated wire magnetic memory and MOS
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Writing currents reduced to practical levels. Improved conceptual designs for writing conductors in micromagnet/Hall-effect random-access integrated-circuit memory reduces electrical current needed to magnetize micromagnet in each memory cell. Basic concept of micromagnet/Hall-effect random-access memory presented in "Magnetic Analog Random-Access Memory" (NPO-17999).
Nondestructive interrogating and state changing circuit for binary magnetic storage elements
Rare earth iron garnets were used in experiments to determine the feasibility of optically pumping a magnetic material to effect the switching process. It was found that rare earth garnets are limited by an absorption edge, only terbium and dysprosium offer a possibility of pumping at energies below the conduction band edge.
The fluctuations in the angular velocity of individual assemblies of a precision mechanical system were analyzed. The system was composed of an electric motor and a magnetic drum which were connected by a flexible coupling. A dynamic model was constructed which took into account the absence of torsion in the rigid shafts of the electric motor drive rotor and the magnetic drum. The motion was described by Lagrange differential equations of the second kind. Curves are developed to show the nature of amplitude fluctuation of the magnetic drum angular velocity at a specific excitation frequency. Additional curves show the amplitudes of fluctuation of the magnetic drum angular velocity compared to the quantity of damping at specific frequencies.
High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.
Proposed magnetic-bubble memory system includes stack of two-dimensional memory modules. Design enables overall storage density of system to be greater than prior magnetic-bubble memories. Provides nonvolatile storage, with readout access times in millisecond range. Has partly parallel input/output configuration supporting high-performance computing. Also relatively invulnerable to damage by ionizing radiation. Binary data, as represented by direction of magnetization of magnetic bubbles, reads out via Faraday effect.
A compact memory uses magnetic bubble technology for providing data storage. A three-dimensional arrangement, in the form of stacks of magnetic bubble layers, is used to achieve high volumetric storage density. Output tracks are used within each layer to allow data to be accessed uniquely and unambiguously. Storage can be achieved using either current access or field access magnetic bubble technology. Optical sensing via the Faraday effect is used to detect data. Optical sensing facilitates the accessing of data from within the three-dimensional package and lends itself to parallel operation for supporting high data rates and vector and parallel processing.
Magnetic matrix memory system for nondestructive reading of information contained in matrix
Magnetic core, destructive and nondestructive readout memories, plated wire film, ferrites, and other component characteristics of guidance computer main memories
Self-contained magnetic bubble memory overlay is fabricated by process that employs epitaxial deposition to form multi-layered complex of magnetically active components on single chip. Overlay fabrication comprises three metal deposition steps followed by subtractive etch.
Theory and design techniques for magnetic core memories for special purpose digital computers and control systems
Pulsed magnetic core memory element with blocking oscillator feedback for interrogation without loss of digital information
In proposed magnetic memory system without moving parts, data is stored in stack of two-dimensional vertical-Bloch-line (VBL) memory chips or modules. System similar to one described in "Three-Dimensional Magnetic-Bubble Memory System" (NPO-18533). Each VBL module in this memory system silimar to module described in "Vertical-Bloch-Line Memory" (NPO-18467). Advantages include high storage density, high speed, nonvolatility, and insensitivity to ionizing radiation.
This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.