NASA NTRS · 19940000367
Three-Dimensional Vertical-Bloch-Line Memory System
Abstract
In proposed magnetic memory system without moving parts, data is stored in stack of two-dimensional vertical-Bloch-line (VBL) memory chips or modules. System similar to one described in "Three-Dimensional Magnetic-Bubble Memory System" (NPO-18533). Each VBL module in this memory system silimar to module described in "Vertical-Bloch-Line Memory" (NPO-18467). Advantages include high storage density, high speed, nonvolatility, and insensitivity to ionizing radiation.
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Katti, Romney R., Wu, Jiin-Chuan, Stadler, Henry L.. 1994-07-01. Three-Dimensional Vertical-Bloch-Line Memory System. https://ntrs.nasa.gov/citations/19940000367
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