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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗
NASA NTRS1976

Low-threshold light-emitting-diode laser

Technique, which consists of reducing bandgap change at heterojunction to 0.1 eV and avoiding deep-level impurities such as Si and Ge, produces low-threshold laser diodes which are made from (AlGa)As and emit in visible spectrum.

Hawrylo, F. Z.↗
NASA NTRS1988

High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.

Kim, Jae-Hoon↗
NASA NTRS1980

Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers

Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.

Botez, D.↗
NASA NTRS1986

Low-threshold solar-pumped laser using C2F5I

Solar-pumped lasing was achieved with pentafluoroethyl iodide, C2F5I, a new alkyl-iodide. Output power and energy of 350 mW and 45 mJ were achieved. This lasant was found to have the lowest lasing threshold of any solar-pumped gas laser to date at approximately 100 solar constants. Such low threshold enables the use in space of simple, trough solar collectors.

De Young, R. J.↗
NASA NTRS1988

Low-Threshold, Solar-Pumped C2F5I Laser

Laser threshold of 100 solar constants achieved. Using two xenon-arc solar simulators, lasing achieved with pentafluoroethyl iodide, a new alkyl iodide, at laser threshold of only 100 solar constants. Solar laser had lowest threshold observed to date. Output power and energy 350 mW and 45 mJ.

Deyoung, Russell J.↗
NASA NTRS1991

Low-threshold, CW, all-solid-state Ti:Al2O3 laser

A CW Ti:Al2O3 ring laser with a threshold power of 119 mW is demonstrated. It provides a tunable source of single-frequency, diffraction-limited radiation that is suitable for injection seeding. The Ti:Al2O3 laser is operated with a diode-laser-pumped, frequency-doubled, Nd:YAG laser as the sole pump source.

Harrison, James↗
NASA NTRS2004

A Resonator for Low-Threshold Frequency Conversion

A proposed toroidal or disklike dielectric optical resonator (dielectric optical cavity) would be made of an optically nonlinear material and would be optimized for use in parametric frequency conversion by imposition of a spatially periodic permanent electric polarization. The poling (see figure) would suppress dispersions caused by both the material and the geometry of the optical cavity, thereby effecting quasi-matching of the phases of high-resonance-quality (high-Q) whispering-gallery electromagnetic modes. The quasi-phase-matching of the modes would serve to maximize the interactions among them. Such a resonator might be a prototype of a family of compact, efficient nonlinear devices for operation over a broad range of optical wavelengths. A little background information is prerequisite to a meaningful description of this proposal: (1) Described in several prior NASA Tech Briefs articles, the whispering-gallery modes in a component of spheroidal, disklike, or toroidal shape are waveguide modes that propagate circumferentially and are concentrated in a narrow toroidal region centered on the equatorial plane and located near the outermost edge. (2) For the sake of completeness, it must be stated that even though optical resonators of the type considered here are solid dielectric objects and light is confined within them by total internal reflection at dielectric interfaces without need for mirrors, such components are sometimes traditionally called cavities because their effects upon the light propagating within them are similar to those of true cavities bounded by mirrors. (3) For a given set of electromagnetic modes interacting with each other in an optically nonlinear material (e.g., modes associated with the frequencies involved in a frequency-conversion scheme), the threshold power for oscillation depends on the mode volumes and the mode-overlap integral. (4) Whispering-gallery modes are attractive in nonlinear optics because they maximize the effects of nonlinearities by occupying small volumes and affording high Q values

Iltchenko, Vladimir↗
NASA NTRS2002

Low-threshold photonic crystal laser

We have fabricated photonic crystal nanocavity lasers, based on a new high-quality factor design that incorporates fractional edge dislocations.

photonic↗
NASA NTRS1973

A laser head for simultaneous optical pumping of several dye lasers

Device accomplishes simultaneous optical pumping using single flashlamp and electrical driver. Dye lasers require relatively low energy to operate (low-threshold pumping requirement) and provide simple method for producing simultaneous independent laser output at number of different wavelengths.

Mumola, P. B.↗
NASA NTRS1976

Interfacial recombination at /AlGa/As/GaAs heterojunction structures

Experiments were conducted to determine the interfacial recombination velocity at Al0.25Ga0.75As/GaAs and Al0.5Ga0.5As/GaAs heterojunctions. The recombination velocity was derived from a study of the injected minority-carrier lifetime as a function of the junction spacing. It is found that for heterojunction spacings in excess of about 1 micron, the interfacial recombination can be characterized by a surface recombination velocity of 4,000 and 8,000 cm/sec for the two types of heterojunctions, respectively. For double-heterojunction spacings below 1 micron, the constancy of the minority-carrier lifetime suggests that the interfacial recombination velocity decreases effectively. This effect is technologically very important since it makes it possible to construct very low-threshold injection lasers. No such effect is observed in single-heterojunction diodes.

Ettenberg, M.↗
NASA NTRS1977

Visible GaAs/0.7/P/0.3/ CW heterojunction lasers

The paper reports the first low-threshold red-light-emitting heterojunction laser diodes consisting of lattice-matched Ga(As,P)/(In,Ga)P heteroepitaxial layers. A room-temperature threshold current of 3400 A/sq cm was obtained at a wavelength of about 7000 A; this value is substantially lower than those achieved at this wavelength with (Al,Ga)As lasers. For the first time, continuous-wave laser operation at temperatures as high as 10 C has been obtained for GaAs(1-x)P(x).

Kressel, H.↗
NASA NTRS1991

AlGaAs-GaAs quantum-well lasers for direct solar photopumping

The paper theoretically examines the solar power requirements for low-threshold AlGaAs-GaAs quantum-well lasers directly photopumped by focused sunlight. A model of separate-confinement quantum-well-heterostructure (SCQWH) lasers was developed, which explicitly treats absorption and transport phenomena relevant to solar pumping. The model was used to identify separate-confinement single-quantum-well laser structures which should operate at photoexcitation intensities of less than 10,000 suns.

Unnikrishnan, Sreenath↗
NASA NTRS1998

Skeletal muscle afferent regulation of bioassayable growth hormone in the rat pituitary

There are forms of growth hormone (GH) in the plasma and pituitary of the rat and in the plasma of humans that are undetected by presently available immunoassays (iGH) but can be measured by bioassay (bGH). Although the regulation of iGH release is well documented, the mechanism(s) of bGH release is unclear. On the basis of changes in bGH and iGH secretion in rats that had been exposed to microgravity conditions, we hypothesized that neural afferents play a role in regulating the release of these hormones. To examine whether bGH secretion can be modulated by afferent input from skeletal muscle, the proximal or distal ends of severed hindlimb fast muscle nerves were stimulated ( approximately 2 times threshold) in anesthetized rats. Plasma bGH increased approximately 250%, and pituitary bGH decreased approximately 60% after proximal nerve trunk stimulation. The bGH response was independent of muscle mass or whether the muscles were flexors or extensors. Distal nerve stimulation had little or no effect on plasma or pituitary bGH. Plasma iGH concentrations were unchanged after proximal nerve stimulation. Although there may be multiple regulatory mechanisms of bGH, the present results demonstrate that the activation of low-threshold afferents from fast skeletal muscles can play a regulatory role in the release of bGH, but not iGH, from the pituitary in anesthetized rats.

Non-NASA Center↗
NASA NTRS1992

Electrophysiology of the mammillary complex in vitro. II. Medial mammillary neurons

1. The electrophysiological properties of guinea pig medial mammillary body (MMB) neurons were studied using an in vitro slice preparation. 2. The neurons (n = 80) had an average resting potential of -57 +/- 5.5 (SD) mV, an input resistance of 176 +/- 83 M omega, and a spike amplitude of 58 +/- 15.7 mV. Most of the neurons were silent at rest (n = 52), but some fired spontaneous single spikes (n = 16) or spike bursts (n = 14). 3. The main electrophysiological characteristic of MMB neurons was the ability to generate Ca(2+)-dependent regenerative events, which resulted in very robust burst responses. However, this regenerative event was not the same for all neurons, ranging from typical low-threshold Ca2+ spikes (LTSs) to intermediate-threshold plateau potentials (ITPs). 4. The ITPs were distinct from the LTSs in that they lasted > or = 100 ms and were not inactivated at membrane potentials at or positive to -55 mV. 5. Some cells with a prominent ITP and no LTS (n = 36) displayed repetitive, usually rhythmic, bursting (n = 14). This ITP could be powerful enough to maintain rhythmic membrane potential oscillations after pharmacological block of Na+ conductances. 6. A group of 32 MMB neurons displayed complex bursting that was generated by activation of both LTSs and ITPs. This was established on the basis of their distinct time- and voltage-dependent characteristics. In a group of neurons (n = 14), the burst responses were exclusively generated by an LTS; however, a Ca(2+)-dependent plateau potential contributed to the generation of rebound-triggered oscillatory firing. 7. In addition to the Ca(2+)-dependent LTS and/or ITP, MMB neurons always displayed high-threshold Ca2+ spikes after reduction of K+ conductances with tetraethylammonium. 8. MMB neurons display one of the richer varieties of voltage-dependent Ca2+ conductances so far encountered in mammalian CNS. We propose that the very prominent endogenous bursting and oscillatory properties of MB neurons allow this nuclear complex to function as an oscillatory relay for the transmission of low-frequency rhythmic activities throughout the limbic circuit.

NASA Discipline Neuroscience↗
NASA NTRS1992

Electrophysiology of the mammillary complex in vitro. I. Tuberomammillary and lateral mammillary neurons

1. The electrophysiological properties of the tuberomammillary and lateral mammillary neurons in the guinea pig mammillary body were studied using an in vitro brain slice preparation. 2. Tuberomammillary (n = 79) neurons were recorded mainly ventral to the lateral mammillary body as well as ventromedially to the fornix within the rostral part of the medial mammillary nucleus. Intracellular staining with horseradish peroxidase (n = 9) and Lucifer yellow (n = 3) revealed that these cells have several thick, long, spiny dendrites emerging from large (20-35 microns) fusiform somata. 3. Most tuberomammillary neurons (66%) fired spontaneously at a relatively low frequency (0.5-10 Hz) at the resting membrane potential. The action potentials were broad (2.3 ms) with a prominent Ca(2+)-dependent shoulder on the falling phase. Deep (17.8 mV), long-lasting spike afterhyperpolarizations were largely Ca(2+)-independent. 4. All tuberomammillary neurons recorded displayed pronounced delayed firing when the cells were activated from a potential negative to the resting level. The cells also displayed a delayed return to the baseline at the break of hyperpolarizing pulses applied from a membrane potential level close to firing threshold. Analysis of the voltage- and time dependence of this delayed rectification suggested the presence of a transient outward current similar to the A current (IA). These were not completely blocked by high concentrations of 4-aminopyridine, whereas the delayed onset of firing was always abolished when voltage-dependent Ca2+ conductances were blocked by superfusion with Cd2+. 5. Tuberomammillary neurons also displayed inward rectification in the hyperpolarizing and, primarily, depolarizing range. Block of voltage-gated Na(+)-dependent conductances with tetrodotoxin (TTX) selectively abolished inward rectification in the depolarizing range, indicating the presence of a persistent low-threshold sodium-dependent conductance (gNap). In fact, persistent TTX-sensitive, plateau potentials were always elicited following Ca2+ block with Cd2+ when K+ currents were reduced by superfusion with tetraethylammonium. 6. The gNap in tuberomammillary neurons may subserve the pacemaker current underlying the spontaneous firing of these cells. The large-amplitude spike afterhyperpolarization of these neurons sets the availability of the transient outward rectifier, which, in conjunction with the pacemaker current, establishes the rate at which membrane potential approaches spike threshold. 7. Repetitive firing elicited by direct depolarization enhanced the spike shoulder of tuberomammillary neurons. Spike trains were followed by a Ca(2+)-dependent, apamine-sensitive, slow afterhyperpolarization. 8. Lateral mammillary neurons were morphologically and electrophysiologically different from tuberomammillary neurons. All lateral mammillary neurons neurons recorded (n = 44) were silent at rest (-60 mV).(ABSTRACT TRUNCATED AT 400 WORDS).

Non-NASA Center↗
NASA NTRS2008

Tailored Asymmetry for Enhanced Coupling to WGM Resonators

Coupling of light into and out of whispering- gallery-mode (WGM) optical resonators can be enhanced by designing and fabricating the resonators to have certain non-axisymmetric shapes (see figure). Such WGM resonators also exhibit the same ultrahigh values of the resonance quality factor (Q) as do prior WGM resonators. These WGM resonators are potentially useful as tunable narrow-band optical filters having throughput levels near unity, high-speed optical switches, and low-threshold laser resonators. These WGM resonators could also be used in experiments to investigate coupling between high-Q and chaotic modes within the resonators. For a WGM resonator made of an optically nonlinear material (e.g., lithium niobate) or another material having a high index of refraction, a prism made of a material having a higher index of refraction (e.g., diamond) must be used as part of the coupling optics. For coupling of a beam of light into (or out of) the high-Q resonator modes, the beam must be made to approach (or recede from) the resonator at a critical angle determined by the indices of refraction of the resonator and prism materials. In the case of a lithium niobate/diamond interface, this angle is approximately 22 .

Mohageg, Makan↗