NASA NTRS · 19760000176
Low-threshold light-emitting-diode laser
Abstract
Technique, which consists of reducing bandgap change at heterojunction to 0.1 eV and avoiding deep-level impurities such as Si and Ge, produces low-threshold laser diodes which are made from (AlGa)As and emit in visible spectrum.
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Hawrylo, F. Z., Kressel, H.. 1976-08-01. Low-threshold light-emitting-diode laser. https://ntrs.nasa.gov/citations/19760000176
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