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At least 19 records

Sub-10 nm Probing of Ferroelectricity in Heterogeneous Materials by Machine Learning Enabled Contact Kelvin Probe Force Microscopy

Reducing the dimensions of ferroelectric materials down to the nanoscale has strong implications on the ferroelectric polarization pattern and on the ability to switch the polarization. As the size of ferroelectric domains shrinks to the nanometer scale, the heterogeneity of the polarization pattern becomes increasingly pronounced, enabling a large variety of possible polar textures in nanocrystalline and nanocomposite materials. Critical to the understanding of fundamental physics of such materials and hence their applications in electronic nanodevices is the ability to investigate their ferroelectric polarization at the nanoscale in a nondestructive way. We show that contact Kelvin probe force microscopy (cKPFM) combined with a k-means response clustering algorithm enables to measure the ferroelectric response at a mapping resolution of 8 nm. In a BaTiO 3 thin film on silicon composed of tetragonal and hexagonal nanocrystals, we determine a nanoscale lateral distribution of discrete ferroelectric response clusters, fully consistent with the nanostructure determined by transmission electron microscopy. Moreover, we apply this data clustering method to the cKPFM responses measured at different temperatures, which allows us to follow the corresponding change in the polarization pattern as the Curie temperature is approached and across the phase transition. This work opens up perspectives for mapping complex ferroelectric polarization textures such as curled/swirled polar textures that can be stabilized in epitaxial heterostructures and more generally for mapping the polar domain distribution of any spatially highly heterogeneous ferroelectric materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Surface Dynamics of Charge Transport in LaAlO 3 /SrTiO 3 with Time-Resolved Kelvin Probe Force Microscopy

Time-resolved Kelvin probe force microscopy (tr-KPFM) was used to map surface potential dynamics in LAO/STO under its critical thickness, where it acts as an insulator, as polarizing and depolarizing electric fields were applied to planar electrodes in ambient conditions. Two time constants, for polarization and relaxation (i.e., depolarization) each, were derived and were shown to be independent of the direction of electrical field, revealing the reproducibility and recovery of the surfaces. Ambient aging or recent electrical history did not change the surface kinetics as determined by tr-KPFM. During polarization, the faster time constant (~3–6 s) is likely associated with the transport of H+ ions through the full length of the channel. The slower time constant (~40–50 s), on the other hand, is observed across only half the channel width near the higher-potential–more positive–electrode, which is likely associated with an electrochemical reaction such as the dissociation of water. This slower time constant drops to ~10–20 s toward the middle of the channel which could represent the transport of OH– ions. Furthermore, during relaxation, the fast time constant is consistent with polarization and is correlated to the same mechanism while the slower time constant is higher than it was during polarization and may represent the reabsorption of moisture from the atmosphere.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Kelvin probe force microscopy under ambient conditions

Kelvin probe force microscopy (KPFM) is a technique derived from atomic force microscopy that provides maps of surface potential or work function differences across material systems, with nanometre-scale resolution. KPFM is a useful tool for investigating electrical phenomena such as dipole orientation, interfacial charge transfer, charge accumulation, band bending and doping levels. This Primer aims to provide an overview of typical ambient-condition KPFM measurements, covering their underlying principles, experimental implementations and wide-ranging applications. Key KPFM variants, including amplitude and frequency modulation, heterodyne detection schemes and innovative open loop and pulsed force techniques, are discussed, with practical guidance on optimizing signal acquisition and reducing errors. Specialized approaches, such as time-resolved KPFM and multimodal KPFM, are discussed for their ability to capture dynamic charge processes and chemical information, respectively. Here, we highlight recent advances in KPFM applications, spanning metal alloys, soft matter, ferroelectrics, photovoltaics and 2D materials, showcasing its versatility across research domains. By addressing current limitations and identifying future opportunities, this Primer underscores the transformative potential of KPFM in advancing the understanding of nanoscale electrical phenomena.

Zahmatkeshsaredorahi, Amirhossein [Lehigh Univ., B↗

Visualizing Charge Transport and Nanoscale Electrochemistry by Hyperspectral Kelvin Probe Force Microscopy

Charge-transport and electrochemical processes are heavily influenced by the local microstructure. Kelvin probe force microscopy (KPFM) is a widely used technique to map electrochemical potentials at the nanometer scale; however, it offers little information on local charge dynamics. In this study, we implement a hyperspectral KPFM approach for spatially mapping bias-dependent charge dynamics in timescales ranging from the sub-millisecond to the second regime. As a proof of principle, we investigate the role mobile surface charges play in a three-unit-cell LaAlO 3 /SrTiO 3 oxide heterostructure. We explore machine learning approaches to assist with visualization, pattern recognition, and interpretation of the information-rich data sets. Linear unmixing methods reveal hidden bias-dependent interfacial processes, most likely water splitting, which are essentially unnoticed by functional fitting of the dynamic response alone. Hyperspectral KPFM will be beneficial for investigating nanoscale charge transport and local reactivity in systems involving a possible combination of electronic, ionic, and electrochemical phenomena.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy

Unraveling local dynamic charge processes is vital for progress in diverse fields, from microelectronics to energy storage. This relies on the ability to map charge carrier motion across multiple length- and timescales and understanding how these processes interact with the inherent material heterogeneities. Towards addressing this challenge, we introduce high-speed sparse scanning Kelvin probe force microscopy, which combines sparse scanning and image reconstruction. This approach is shown to enable sub-second imaging (>3 frames per second) of nanoscale charge dynamics, representing several orders of magnitude improvement over traditional Kelvin probe force microscopy imaging rates. Bridging this improved spatiotemporal resolution with macroscale device measurements, we successfully visualize electrochemically mediated diffusion of mobile surface ions on a LaAlO 3 /SrTiO 3 planar device. Such processes are known to impact band-alignment and charge-transfer dynamics at these heterointerfaces. Furthermore, we monitor the diffusion of oxygen vacancies at the single grain level in polycrystalline TiO 2 . Through temperature-dependent measurements, we identify a charge diffusion activation energy of 0.18 eV, in good agreement with previously reported values and confirmed by DFT calculations. Together, these findings highlight the effectiveness and versatility of our method in understanding ionic charge carrier motion in microelectronics or nanoscale material systems.

25 ENERGY STORAGE↗

Ultraviolet Photoemission Spectroscopy and Kelvin Probe Measurements on Metal Halide Perovskites: Advantages and Pitfalls

In this essay, a case study is presented on the electronic structure of several metal halide perovskites (MHP) using Kelvin probe (KP)-based surface photovoltage (SPV) measurements and ultraviolet photoemission spectroscopy (UPS) to demonstrate the advantages, but also the pitfalls, of using these techniques to characterize the surfaces of these materials. The first part addresses the loss of halide species from perovskite surfaces upon supragap illumination in vacuum. This has the potential to cause both a long-term alteration of the sample work function and a modification of the KP tip during SPV measurements. If undetected, this leads to a misinterpretation of the MHP surface potential. The second part illustrates the difficulties in determining the valence band maximum (VBM) of MHP surfaces with UPS and stresses the importance of taking into account the low density of states at the VBM edge. Given this circumstance, specific care must be taken to eliminate measurement artifacts in order to ascertain the presence or absence of low densities of electronic gap states above the VBM. This essay also highlights issues such as film degradation, nonequilibrium situations (e.g., SPV), and satellite emissions, which occur during photoemission spectroscopy.

36 MATERIALS SCIENCE↗

Super-resolution and signal separation in contact Kelvin probe force microscopy of electrochemically active ferroelectric materials

In this work, imaging mechanisms in contact Kelvin probe force microscopy (cKPFM) are explored via information theory-based methods. Gaussian processes are used to achieve super-resolution in the cKPFM signal, effectively extrapolating across the spatial and parameter space. Tensor factorization is applied to reduce the multidimensional signal to the tensor convolution of the scalar functions that show a clear trending behavior with the imaging parameters. These methods establish a workflow for the analysis of the multidimensional datasets that can then be related to the relevant physical mechanisms. We also provide an interactive Google Colab notebook that goes through all the analyses discussed in the paper.

36 MATERIALS SCIENCE↗

Resolving surface potential variation in Ge/MoS 2 heterostructures with Kelvin probe force microscopy

In this work, we employ an atomic force microscopy-based technique, Kelvin probe force microscopy, to analyze heterogeneities of four different 2D/3D Ge/MoS 2 heterostructures with Ge chemical vapor deposition (CVD) time. High-contrast spatially resolved contact potential difference (CPD) maps reveal the evolution of the samples by Ge deposition. The CPD map in an as-prepared sample does not display any heterogeneity, but CPD contrasts along the grain boundaries are obviously noticed as Ge is deposited on MoS 2 . With a sufficiently long Ge CVD deposition time, strong grain-to-grain CPD variations over the 2D/3D heterostructures are observed. The results show the variations of the work function from grain to grain that are attributed to the strain induced by the Ge island formation on the cracked MoS2 initiated by sulfur vacancies.

36 MATERIALS SCIENCE↗

Advanced Modes of Electrostatic and Kelvin Probe Force Microscopy for Energy Applications

Since their invention over three decades ago, electrostatic and Kelvin probe force microscopies (EFM and KPFM) have become primary tools for the characterization of electrical phenomena on the nanometer scale, with multiple applications for ferroelectrics, photovoltaics, batteries, and fuel cells among a myriad of other energy-related materials. Meanwhile, the techniques have undergone remarkable advances in terms of resolution, sensitivity, and informational content (e.g., dynamic information). In this chapter, we review the operational principles behind classical EFM/KPFM, including the various excitation/detection schemes, while also highlighting potential cross-talk and instrumental issues. Beyond classical approaches, we will describe more recent advances involving open loop detection, multifrequency/multidimensional excitation, and time-resolved methods. Finally, potential pathways for the further development of EFM/KPFM at the solid-liquid interface are discussed.

Checa, Marti↗

Kelvin Probe Force Microscopy Imaging of Plasticity in Hydrogenated Perovskite Nickelate Multilevel Neuromorphic Devices

Ion drift in nanoscale electronically inhomogeneous semiconductors is among the most important mechanisms being studied for designing neuromorphic computing hardware. However, nondestructive imaging of the ion drift in operando devices directly responsible for multiresistance states and synaptic memory represents a formidable challenge. Here, we present Kelvin probe force microscopy imaging of hydrogen-doped perovskite nickelate device channels subject to high-speed electric field pulses to directly visualize proton distribution by monitoring surface potential changes spatially, which is also supported with finite element-based electric field distribution studies. First-principles calculations provide mechanistic insights into the origin of surface potential changes as a function of hydrogen donor doping that serves as the contrast mechanism. We demonstrate 128 (7-bit) nonvolatile conductance levels in such devices relevant to in-memory computing applications. The synaptic plasticity measurements are implemented in spiking neural networks and show promising results for classification (SciKit Learn’s Iris and Wine data sets) and control (OpenAI’s CartPole-v1 and BipedalWalker-v3) simulation tasks.

Kelvin probe force microscopy↗

Scanning Kelvin Probe Microscopy Reveals That Ion Motion Varies with Dimensionality in 2D Halide Perovskites

We study ion migration in 2D lead halide perovskites of varying dimensionality using scanning Kelvin probe microscopy (SKPM). We perform potentiometry on micrometer-scale lateral junctions in the absence of injected charge, and we compare how ion motion varies between prototypical two-dimensional n-butylammonium lead iodide perovskites (BA 2 PbI 4 , n = 1), and methylammonium-incorporated quasi-2D perovskites (BA 2 MA 3 Pb 4 I 13 , ~ < n > = 4) under the effects of illumination and temperature. We attribute the observed slow dynamics to relaxation of the bias-induced ionic charge distributions at different temperatures, and we extract the activation energies associated with the ionic motion in each case. Lastly, we propose an explanation for these phenomena by hypothesizing that ion motion in purely-2D BA 2 PbI 4 perovskite films is dominated by paired halide and halide vacancy, whereas for quasi-2D BA 2 MA 3 Pb 4 I 13 perovskites, the ion motion is a combination of both halide and methylammonium (vacancy) migration. These data show that dimensionality in these systems plays a critical role in ion dynamics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

Epitaxial regrowth of GaN pn junctions is a key technology for realization of a variety of high-performance GaN power electronic devices. However, the regrowth process can introduce impurities and defects that degrade a device’s performance. Here, we show that scanning Kelvin probe force microscopy and scanning capacitance microscopy can be used in a cross-sectional geometry to probe dopant distributions and an electronic structure in epitaxially grown GaN pn junctions. These measurements enable profiling of potential and dopant distributions across GaN pn junctions produced by uninterrupted epitaxial growth and by regrowth on an etched surface. Clear differences are observed in comparisons to the electronic structure of these two types of junctions that can be correlated with results of complementary characterization of dopant distributions reported for similarly grown structures. These measurements also suggest the presence of defects in etch-and-regrow pn junction structures that extend nearly 1 μm below the regrown interface.

Kim, Tae-Hyeon (ORCID:0000000341530617)↗

Exploring Responses of Contact Kelvin Probe Force Microscopy in Triple-Cation Double-Halide Perovskites

Hybrid organic–inorganic perovskite (HOIP) solar cells have undergone unprecedentedly rapid improvement in power conversion efficiencies during the last decade, but controversy remains regarding the role of local phenomena and heterogeneity in grain by grain. These challenges in turn necessitate understanding the fundamental mechanisms operating at individual grains and exploring how these mechanisms give rise to the collective behaviors of the films. Although numerous efforts have targeted local phenomena in these materials using classical scanning probe microscopy modalities, the measurements remain difficult to interpret due to intrinsic coupling between possible ferroelectric, ion migration, bulk and surface electrochemical phenomena, and the effects of light on these behaviors. Here, we explore the electromechanical responses in (Cs 0.05 FA 0.85 MA 0.15 )Pb(I 0.85 Br 0.15 ) 3 perovskite thin film in the dark and under illumination using band excitation-piezoresponse force microscopy (BE-PFM). To identify and separate ferroic, electrostatic, and electrochemical responses, we utilize contact-Kelvin probe force microscopy (cKPFM). The cKPFM responses show weak variability with morphological features in the dark, while such variability significantly increases under illumination. Deconvolution of the cKPFM responses via principal component analysis (PCA) shows heterogeneity in grain to grain possibly due to variation in migration and segregation of halide ions in mixed perovskites at specific grains. Further, we propose an electrostatic mechanism based on the physics of semiconductors, which can directly link the observed cKPFM behaviors with the ionic and electronic density of states (DOS) and their time dynamics. Here, these findings suggest that cKPFM is a powerful probe of local ionic behaviors on the nanoscale, both in HOIPs and other materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts

In this work, the authors report the use of pulsed laser deposition to fabricate nickel oxide layers on silicon and assess the applicability of this structure as a hole selective contact. Films were deposited at temperatures of 300, 500, 700, and 900 °C. Results from reflective high energy electron diffraction patterns indicate increasing crystallinity with temperature up to 500 °C. However, layers deposited at 900 °C are amorphous. Nevertheless, results from atomic force microscopy, contact resistance measurements, and photoluminescence lifetime imaging indicate that films deposited at 900 °C have the best film smoothness, lowest specific contact resistivity, and highest lifetimes, and therefore, they are best suited for hole selective contact applications. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were also carried out to study the effects of deposition temperature.

42 ENGINEERING↗

Inducing Circularly Polarized Single-Photon Emission via Chiral-Induced Spin Selectivity

One of the central aims of the field of spintronics is the control of individual electron spins to effectively manage the transmission of quantized data. One well-known mechanism for controlling electronic spin transport is the chiral-induced spin-selectivity (CISS) effect in which a helical nanostructure imparts a preferential spin orientation on the electronic transport. One potential application of the CISS effect is as a transduction pathway between electronic spin and circularly polarized light within nonreciprocal photonic devices. Here in this work, we identify and quantify the degree of chiral-induced spin-selective electronic transport in helical polyaniline films using magnetoconductive atomic force microscopy (mcAFM). We then induce circularly polarized quantum light emission from CdSe/CdS core/shell quantum dots placed on these films, demonstrating a degree of circular polarization of up to ~21%. Utilizing time-resolved photoluminescence microscopy, we measure the radiative lifetime difference associated with left- and right-handed circular polarizations of single emitters. These lifetime differences, in combination with Kelvin probe mapping of the variation of surface potential with magnetization of the substrate, help establish an energy level diagram describing the spin-dependent transport pathways that enable the circularly polarized photoluminescence.

36 MATERIALS SCIENCE↗

Combinatorial Study of MZO Emitters for CdTe-Based Solar Cells

Precise band alignment at the front interface of CdTe-based solar cells is necessary to reduce photoexcited charge carrier recombination and to enable higher energy conversion efficiencies. Magnesium zinc oxide is not only transparent but also offers the ability to tune the conduction band offset with CdTe at the front of the device stack. In this work, we describe reactive sputtering of Mg 1-x Zn x O using metal targets and its application in CdTe photovoltaics. Combinatorial libraries of Mg 1-x Zn x O were created to tune the conduction band alignment for the optimal performance of CdTe solar cells. Band gap variation of more than 0.4 eV is achieved across a 3-inch substrate. Kelvin probe measurements demonstrate variance of work function across the substrate. Device performance is optimized at band gaps of 3.5 eV for the CdTe device processing conditions employed in this study.

14 SOLAR ENERGY↗

Correlative nm-Scale Nonuniformity of Active Charge Carriers and Electrical Potential Along Both the Plane-View and Depth Directions in Group-V-Doped CdTe Thin Films: Preprint

We report nanometer-scale imaging on inhomogeneous distributions of active carrier and electrical potential in an As-doped CdTe film along both plane-view and film-depth directions. Despite Se grading, the SCM imaging does not show a clear variation of carrier concentration along the depth of the film. Instead, we observe carrier concentration variations of about 1 order of magnitude (high 1015 to low 1017/cm3) with inhomogeneous spatial regions ranging from a few hundred nm to a few ?m. This nonuniformity is distributed randomly in both the film lateral and vertical directions, independent of grain structure and GBs. We further mapped the surface potential using Kelvin probe force microscopy (KPFM). Higher potential was found on GBs, illustrating positive GB charging but not GB-specific carrier concentration. The results indicate that this suite of techniques can help identify nonuniform carrier concentration and potential fluctuations that can contribute to Voc deficits in GrV-doped CdTe devices.

CdTe thin film photovoltaics↗

CdSeTe solar-cell performance with different dopant types

Four doping conditions were explored for CdTe-based solar cells: p-type As and P, n-type Al, and no intentional doping. In each case, the CdTe absorber was alloyed with Se, but only near the normal front-side, light entry for the cells, while the dopants were added from the back. Cells with p-dopants showed efficiencies up to 20% with front-side illumination, but the n-doped and undoped ones were close to zero. With back-side illumination, this was reversed with undoped up to 8% and p-doped ones only about 2%. These results are explained by Kelvin-probe measurements of electric-field profiles, which showed that the diode field was near the front for the higher-efficiency p-doping, but near the back for undoped and n-doped.

14 SOLAR ENERGY↗