DOE OSTI · 3017173
CdSeTe solar-cell performance with different dopant types
Abstract
Four doping conditions were explored for CdTe-based solar cells: p-type As and P, n-type Al, and no intentional doping. In each case, the CdTe absorber was alloyed with Se, but only near the normal front-side, light entry for the cells, while the dopants were added from the back. Cells with p-dopants showed efficiencies up to 20% with front-side illumination, but the n-doped and undoped ones were close to zero. With back-side illumination, this was reversed with undoped up to 8% and p-doped ones only about 2%. These results are explained by Kelvin-probe measurements of electric-field profiles, which showed that the diode field was near the front for the higher-efficiency p-doping, but near the back for undoped and n-doped.
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Hill, Taylor [Colorado State Univ., Fort Collins, CO (United States); First Solar, Santa Clara, CA (United States)] (ORCID:0009000921240824), Farshchi, Rouin [First Solar, Santa Clara, CA (United States)], Jiang, Chun Sheng [National Renewable Energy Laboratory (NREL), Golden, CO (United States)] (ORCID:0000000302307500), Sites, James [Colorado State Univ., Fort Collins, CO (United States)] (ORCID:0000000247494381). 2025-12-08. CdSeTe solar-cell performance with different dopant types. https://doi.org/10.1063/5.0297894
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