Proton irradiation effects in MOS and junction field-effect transistors and integrated circuits
Proton irradiation effects in MOS and junction field effect transistors and integrated circuits
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Proton irradiation effects in MOS and junction field effect transistors and integrated circuits
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Proton irradiation effects in MOS and junction field-effect transistors and integrated circuits
Post-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).
Electron irradiation effects of capacitor-type micrometeoroid detector
Irradiation effects of 40 and 440-mev protons on transistors
UV irradiation effects on ZnO spacecraft thermal control coating pigments, discussing photo-Hall, luminescence and electron paramagnetic resonance measurements
Gamma irradiation effects on thermal stability and decomposition of ammonium perchlorate
Irradiation effects on tensile behavior of titanium alloys and titanium at cryogenic temperatures
Two recent studies have shown that solar flare irradiated grains from Murchison and Kapoeta have excess spallogenic Ne-21 compared to unirradiated grains, indicating large precompaction particle irradiation effects. The quantity of cosmogenic neon in these grains presents serious difficulties for either galactic cosmic ray or normal solar flare sources. In the first study it was suggested that the effect might be the result of exposure to an early active sun. The more recent experiment both confirms the earlier results and provides constraints on the characteristic energy spectrum on the irradiation. The first results were obtained from Murchison olivines and Kapoeta pyroxenes by mass spectrometric analysis of sets of grains selected on the basis of the presence or absence of solar flare particle tracks. In the second work plagioclase feldspar grains from Kapoeta were studied.
Nuclear irradiation effect on embrittlement of Ti and Ti alloys at cryogenic temperature, determining radiation damage threshold as function of tensile properties changes
Effects of electron irradiation on some of the optical properties in organic CdSe nanocrystals coated in trioctylphosphine oxide (TOPO) and biologically compatible CdSe nanocrystals coated in mercaptoacetic acid, as CdSe as CdSe nanocrystals conjugated with the protein are investigated using the technique of cathodoluminescence. Effects of varying the beam energy and temperatures were examined and faster degradation at cryogenic temperatures and higher beam energies was found under some conditions.
This paper reports the results of a study of proton irradiation effects on heterostructures.
ZnO coating pigment for spacecraft thermal control, examining UV irradiation effects on electrical properties
Irradiation effects on three materials from the NASA Plum Brook Reactor Surveillance Program were determined. An increase of 105 K in the nil-ductility temperature for A-201 steel was observed at a fluence of approximately 3.1 x 10 to the 18th power neutrons/sq cm (neutron energy E sub n greater than 1.0 MeV). Only minor changes in the mechanical properties of 17-7 PH stainless steel were observed up to a fluence of 2 x 10 to the 21st power neutrons/sq cm (E sub n greater than 1.0 MeV). The titanium-6-percent-aluminum-4-percent-vanadium alloy maintained its notch toughness up to a fluence of 1 x 10 to the 21st power neutrons/sq cm (E sub n greater than 1.0 MeV).
The work covered in this report has been directed toward the investigation of the irradiation effects of 22 and 240 MeV protons on several transistors, solar cells, resistors, and condensers to be used in the space radiation environment. The experimental data indicated definite detrimental effects on transistors and solar cells but no apparent effects on the types of resistors and condensers tested. The detrimental effects are of two distinct types: transient and permanent.
Crystalline and amorphous silicates condense in the outflows of low mass evolved stars and massive red supergiant stars and are injected into the interstellar medium (ISM) where they are rendered almost completely amorphous by a multitude of destructive processes (e.g. shock, grain-grain collisions, and irradiation). Irradiation effects in particular may have played an important role in the genesis and modification of primitive grains in cometary dust, but unraveling those effects requires controlled experiments under appropriate conditions and with an emphasis on materials relevant to the ISM. Here we report our infrared (IR) microspectroscopy and trans-mission electron microscope (TEM) measurements on forsterite that was amorphized through irradiation by high energy heavy ions.
Several materials used in the NERVA project were irradiated at cryogenic temperatures to neutron fluences between 10 to the 17th and 10 to the 19th power newtons per square centimeter. Tensile properties were determined over a temperature range to evaluate the effects of irradiation on the material properties. The expected radiation damage typical of other materials was observed. A general increase in strength and decrease in ductility occurred. The effects at liquid nitrogen temperatures are more pronounced since radiation induced defects are not annealed out.