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9 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

On the mass transport properties of the GeSe-GeI4 system under normal and reduced gravity conditions

Previous work on the mass transport rate of the GeSe-GeI4 system has been reevaluated using the mass spectrometric results of Buchan and Rosenberger (1987), and considering the presence of GeSe(s) and GeSe2(s) phases in the source material. The present transport rate study confirms the previously derived dominance of the sublimation of GeSe at lower pressures of GeI4, and of chemical vapor transport at higher pressures of GeI4. It is noted that experimentally observed flux anomalies are model-independent.

Palosz, Witold↗
DOE OSTI2020

Materials Data on GeI4 by Materials Project

GeI4 is Iron carbide-like structured and crystallizes in the cubic Pa-3 space group. The structure is zero-dimensional and consists of eight germanium tetraiodide molecules. Ge4+ is bonded in a tetrahedral geometry to four I1- atoms. There are one shorter (2.54 Å) and three longer (2.55 Å) Ge–I bond lengths. There are two inequivalent I1- sites. In the first I1- site, I1- is bonded in a single-bond geometry to one Ge4+ atom. In the second I1- site, I1- is bonded in a single-bond geometry to one Ge4+ atom.

36 MATERIALS SCIENCE↗
NASA NTRS1987

Mass spectroscopic characterization of the GeSe:GeI4 vapor transport system

The GeSe:GeI4 vapor crystal growth system was characterized mass spectroscopically. A steady-state Knudsen effusion technique was developed to simulate the equilibrium conditions at one end of a vapor transport ampoule. It was found that the previously neglected equilibrium GeSe2(s) = GeSe(v) + 1/2Se2(v) reduces the Se2(v) concentration to an extent that sublimation/condensation of GeSe becomes the dominant transport mechanism. At total pressures near 1 atm the concentration of an additional Ge-Se-I vapor species becomes comparable to that of GeSe(v).

Buchan, Nicholas I.↗
NASA NTRS1975

Solidification kinetics

The vapor systems GeI2 and I2 and solid GeI4 were analyzed, using Raman spectroscopic techniques. The Raman bands of I2 and GeI4 were confirmed and Raman bands for GeI2 at 230 and 360 cm to the -1 power were reported. The application of the Raman techniques as a temperature probe in vapor transport kinetics was studied, and its feasibility is considered to be very good.

Mcnutt, R. C.↗
NASA NTRS1985

Fluid Dynamics and Thermodynamics of Vapor Phase Crystal Growth

The ground-based research effort under this program is concerned with systematic studies of the effects of variations: (1) of the relative importance of buoyancy-driven convection, and (2) of diffusion and viscosity conditions on crystal properties. These experimental studies are supported by thermodynamic characterizations of the systems, based on which fluid dynamic parameters can be determined. The specific materials under investigation include: the GeSe-GeI4, Ge-GeI4, HgTe-HgI2, and Hg sub (1-x)Cd sub (x) Te-HgI2 systems. Mass transport rate studies of the GeSe-GeI system as a function of orientation of the density gradient relative to the gravity vector demonstrated the validity of flux anomalies observed in earlier space experiments. The investigation of the effects of inert gases on mass flux yielded the first experimental evidence for the existence of a boundary layer in closed ampoules. Combined with a thorough thermodynamic analysis, a transport model for diffusive flow including chemical vapor transport, sublimation, and Stefan flow was developed.

Wiedemeier, H.↗
NASA NTRS1986

Vapor transport processes of Ge-chalcogenides under normal and reduced gravity conditions

Experimental and theoretical studies of the GeSe-GeI4 system revealed the multicomponent, multireaction nature of this system and the existence of a diffusion boundary layer; they also yielded equations for the prediction of diffusion limited mass transport rates. Vapor transport and crystal growth experiments of the GeSe-GeI4 and GeSe-Xe systems on earth and in a microgravity environment demonstrated the effects of convection and of microgravity on mass flux and crystal morphology. The surface and bulk morphology of GeSe crystals obtained for both systems in microgravity is considerably improved relative to ground-based specimens. Unexpected crystal growth phenomena were observed for the GeSe-Xenon system on recent Shuttle flights.

Wiedemeier, H.↗
NASA NTRS1974

Vapor growth of GeTe single crystals in micro-gravity

The positive effects of micro-gravity on crystal growth and fundamental properties of the vapor transport reaction were established by analyzing the results of GeSe and GeTe vapor transport experiments performed on board Skylab. The analysis was based on a direct comparison of GeSe and GeTe crystals and of mass transport rate data obtained on earth and in space. For this purpose, a total of six transport experiments employing different concentrations of transport agent (GeI4) and two temperature gradients were performed during the Skylab 3 and 4 missions. Extensive ground-based studies demonstrated that the crystal morphology and the mass transport rates of the above systems are affected by the transport conditions, in particular by gravity-driven convection. The results demonstrate unambiguously a considerable improvement of the space crystals in terms of surface perfection, crystalline homogeneity and defect density. The observation of greater mass transport rates than expected in micro-gravity environment is of basic scientific and technological significance. This indicates that conventional transport models are incomplete and demonstrates that crystals of improved quality can be grown at reasonable rates by this technique in space. Results are of practical importance for the modification of crystal growth techniques on earth.

Wiedemeier, H.↗
NASA NTRS1976

Crystal growth from the vapour phase (ASTP experiment MA-085)

The positive effects of microgravity on crystal quality and fundamental properties of the vapor transport reaction were established by analyzing the results of three transport experiments on multi-component systems performed during the Apollo Soyuz Test Project (ASTP) mission. The systems employed were GeSe(0.99)Te(0.01) - GeI4 (A), GeS(0.98)Se(0.02) - GeCl4 (B), and GeS - GeCl4-Ar (C). The crystallographic analysis is based on a direct comparison of space and ground-based (prototype) crystals, employing X-ray diffraction, microprobe, microscopic, and chemical etching techniques. The results demonstrate a considerable improvement of the space-grown crystals in terms of chemical and crystalline homogeneity, surface morphology, and bulk perfection relative to ground specimens. The confirmation of greater mass transport rates than predicted for micro-gravity by present vapor transport models is of basic scientific and practical importance for the improvement of transport models and techniques on earth and for the development of a transport model for space conditions. The internal consistency and agreement between ASTP and Skylab results obtained for different compounds, transport agents, and temperature gradients strongly support the validity of these observations. The combined findings of improved crystal quality and high mass transport rates are of technological significance for space-processing applications.

Wiedemeier, H.↗
NASA NTRS1978

Vapor transport mechanisms

The Raman scattering furnace for investigating vapor transport mechanisms was completed and checked out. Preliminary experiments demonstate that a temperature resolution of plus and minus 5 C is possible with this system operating in a backscatter mode. In the experiments presented with the GeI 4 plus excess Ge system at temperatures up to 600 C, only the GeI4 band at 150 cm superscript minus 1 was observed. Further experiments are in progress to determine if GeI2 does become the major vapor species above 440 C.

Workman, G. L.↗