NASA NTRS · 19760004172
Solidification kinetics
Abstract
The vapor systems GeI2 and I2 and solid GeI4 were analyzed, using Raman spectroscopic techniques. The Raman bands of I2 and GeI4 were confirmed and Raman bands for GeI2 at 230 and 360 cm to the -1 power were reported. The application of the Raman techniques as a temperature probe in vapor transport kinetics was studied, and its feasibility is considered to be very good.
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Mcnutt, R. C.. 1975-09-26. Solidification kinetics. https://ntrs.nasa.gov/citations/19760004172
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