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The vapor systems GeI2 and I2 and solid GeI4 were analyzed, using Raman spectroscopic techniques. The Raman bands of I2 and GeI4 were confirmed and Raman bands for GeI2 at 230 and 360 cm to the -1 power were reported. The application of the Raman techniques as a temperature probe in vapor transport kinetics was studied, and its feasibility is considered to be very good.
The Raman scattering furnace for investigating vapor transport mechanisms was completed and checked out. Preliminary experiments demonstate that a temperature resolution of plus and minus 5 C is possible with this system operating in a backscatter mode. In the experiments presented with the GeI 4 plus excess Ge system at temperatures up to 600 C, only the GeI4 band at 150 cm superscript minus 1 was observed. Further experiments are in progress to determine if GeI2 does become the major vapor species above 440 C.