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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Electron microscope, electron diffraction, and electron microprobe analysis of defective solid state weldment on liquid hydrogen tank from Apollo 12 fuel cell system
Abstract not provided.
Electron microscopes (EM’s), are workhorse tools serving diverse fields such as materials science, biological science, and engineering. Scanning EM’s (SEM’s) in particular enable high magnification study and pinpoint chemical analyses of structures down to the nanoscale by providing a powerful blend of strong optical scattering, high native resolution, large depth of focus, and energy-dispersive X-ray spectroscopy (EDS). Mochii is the world’s smallest production electron microscope, scheduled to travel to the International Space Station (ISS) this spring where it will serve as an ISS National Laboratory (ISSNL) microgravity facility on successful demonstration. We previously reported on progress preparing Mochii for space flight, in particular flight integration verifications and science application testing. These included standard integration testing such as electromagnetic interference and flight vibration, and extend to unique functional testing such as magnetic susceptibility and extreme analog environment testing under the sea. Presently, Mochii payload flight hardware has completed testing and was handed over to NASA’s ISS payload processing facility in Houston. It will make its way to the the east coast for launch currently scheduled on Space-X CRS-20 for Mission increment 62 in March 2020.
Electron microscope producing dark field images without resolution loss, using primary beam electrical tilting
Two screws and two washers, several small chips of tubing, and a fiber removed from a third screw were examined with the scanning electron microscope and the electron microprobe. The purpose of the examination was to determine the nature of the material on the surface of these samples and to search for the presence of meteoritic material.
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Laser delivery probes using multimode fiber optic delivery and bulk focusing optics have been constructed and used for performing materials processing experiments within scanning electron microscope/focused ion beam instruments. Controlling the current driving a 915-nm semiconductor diode laser module enables continuous or pulsed operation down to sub-microsecond durations, and with spot sizes on the order of 50 {mu}m diameter, achieving irradiances at a sample surface exceeding 1 MW/cm{sup 2}. Localized laser heating has been used to demonstrate laser chemical vapor deposition of Pt, surface melting of silicon, enhanced purity, and resistivity via laser annealing of Au deposits formed by electron beam induced deposition, and in situ secondary electron imaging of laser induced dewetting of Au metal films on SiO{sub x}.
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A new experimental framework for the characterization of defects in semiconductors is demonstrated. Through the direct, energy-resolved correlation of three analytical techniques spanning six orders of magnitude in spatial resolution, a critical mid-bandgap electronic trap level (E V + 0.56 eV) within Ag 0.2 Cu 0.8 In 1–x Ga x Se 2 is traced to its nanoscale physical location and chemical source. This is achieved through a stepwise, site-specific correlated characterization workflow consisting of device-scale (≈1 mm 2 ) deep level transient spectroscopy (DLTS) to survey the traps present, scanning probe–based DLTS (scanning-DLTS) for mesoscale-resolved (hundreds of nanometers) mapping of the target trap state’s spatial distribution, and scanning transmission electron microscope based electron energy-loss spectroscopy (STEM-EELS) and X-ray energy-dispersive spectroscopy for nanoscale energy-, structure, and chemical-resolved investigation of the defect source. Furthermore, this first demonstration of the direct observation of sub-bandgap defect levels via STEM-EELS, combined with the DLTS methods, provides strong evidence that the longsuspected Cu In/Ga substitutional defects are indeed the most likely source of the E V + 0.56 eV trap state and serves as a key example of this approach for the fundamental identification of defects within semiconductors, in general.
Scanning electron microscope for evaluating failure mechanisms in semiconductor devices, and for three-dimensional representation of biological specimens
An electron microscope is described with an electron source a condenser lens having either a circular aperture for focusing a solid cone of electrons onto a specimen or an annular aperture for focusing a hollow cone of electrons onto the specimen. It also has objective lens with an annular objective aperture, for focusing electrons passing through the specimen onto an image plane. A method of making the annular objective aperture using electron imaging, electrolytic deposition and ion etching techniques is included.
An electron optical system for observing Foucault images was constructed using a conventional transmission electron microscope without any special equipment for Lorentz microscopy. The objective lens was switched off and an electron beam was converged by a condenser optical system to the crossover on the selected area aperture plane. The selected area aperture was used as an objective aperture to select the deflected beam for Foucault mode, and the successive image-forming lenses were controlled for observation of the specimen images. The irradiation area on the specimen was controlled by selecting the appropriate diameter of the condenser aperture.
Mirror electron microscope (MEM) observation has been conducted for a 4-{mu}m-thick n-doped 4H-SiC epitaxial layer. If the sample is simultaneously illuminated with ultraviolet (UV) light of a slightly greater energy than the bandgap energy of 4H-SiC, in-grown stacking faults (IGSFs) can be clearly observed in MEM images. These observations were performed non-destructively, as almost all irradiated electrons returned without impinging the sample surface due to the negative voltage applied to the sample. High spatial resolution observation via MEM showed that multiple IGSFs were stacked up. The phenomenon in which the contrast of the IGSFs vanished in the absence of UV illumination and under UV illumination with a lower energy than the bandgap energy revealed that the origin of the contrast was the negative charging of IGSFs trapping electrons excited by UV light.
Electron microscopy and defect analysis are a cornerstone of materials science, as they offer detailed insights on the microstructure and performance of a wide range of materials and material systems. Building a robust and flexible platform for automated defect recognition and classification in electron microscopy will result in the completion of analysis orders of magnitude faster after images are recorded, or even online during image acquisition. Automated analysis has the potential to be significantly more efficient, accurate, and repeatable than human analysis, and it can scale with the increasingly important methods of automated data generation. Herein, an automated recognition tool is developed based on a computer vison–based approach; it sequentially applies a cascade object detector, convolutional neural network, and local image analysis methods. We demonstrate that the automated tool performs as well as or better than manual human detection in terms of recall and precision and achieves quantitative image/defect analysis metrics close to the human average. The proposed approach works for images of varying contrast, brightness, and magnification. Furthermore, these promising results suggest that this and similar approaches are worth exploring for detecting multiple defect types and have the potential to locate, classify, and measure quantitative features for a range of defect types, materials, and electron microscopic techniques.
Scanning electron microscopes are used to determine both user-induced damages and manufacturing defects subtle enough to be missed by conventional light microscopy. Method offers greater depth of field and increased working distances.
Here, this article describes the establishment, over a period of 10 years or so, of a multi-user, institution-wide facility for the characterization of materials and devices at the nanoscale. Emphasis is placed on the type of equipment that we have found to be most useful for our users, and the business strategy that maintains its operations. A central component of our facility is an aberration-corrected environmental transmission electron microscope and its application is summarized in the studies of plasmon energies of silver nanoparticles, the band gap of PbS quantum dots, atomic site occupancy near grain boundaries in yttria stabilized zirconia, the lithiation of silicon nanoparticles, in situ observations on carbon nanotube oxidation and the electron tomography of varicella zoster virus nucleocapsids.
In-situ tensile tests have been performed in a dual beam focused ion beam and scanning electron microscope on as-grown and prestrained single-crystal molybdenum-alloy (Mo-alloy) fibers. The fibers had approximately square cross sections with submicron edge lengths and gauge lengths in the range of 9–41 μm. In contrast to previously observed yield strengths near the theoretical strength of 10 GPa in compression tests of ~1–3-μm long pillars made from similar Mo-alloy single crystals, a wide scatter of yield strengths between 1 and 10 GPa was observed in the as-grown fibers tested in tension. Deformation was dominated by inhomogeneous plastic events, sometimes including the formation of Lüders bands. In contrast, highly prestrained fibers exhibited stable plastic flow, significantly lower yield strengths of ~1 GPa, and stress–strain behavior very similar to that in compression. A simple, statistical model incorporating the measured dislocation densities is developed to explain why the tension and compression results for the as-grown fibers are different.