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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Statistical analysis of displacement damage in small devices from neutron and ion irradiation

Modern semiconductor devices, such as gate-all-around nanosheet field-effect transistors (GAA NS FETs), are smaller than displacement damage cascades from fission neutrons. In this regime, device failure may occur through low-probability single events, rather than by parametric degradation previously seen in larger devices. Here, we present a statistical model that predicts the probability of a damage event in a small device and the probability distribution of the magnitude, i.e., number of displacements within the device, from each event. The model is developed first for neutron irradiation and then for energetic ion irradiation. The model is consistent with results from recent experiments in which lithium-ion irradiation produced stepwise increases in subthreshold current in GAA NS FETs.

Wampler, W. R.↗
DOE OSTI2024

Development and Qualification of Advanced Alloys Used in High Helium and Displacement Damage Service for Fusion Energy Applications

This document represents a final report on the Department of Energy (DOE) Office of Science, Office of Fusion Energy Science (OFES) Grant Entitled “Development and Qualification of Advanced Alloys Used in High Helium and Displacement Damage Service for Fusion Energy Applications” (DE-FG02-94ER54275). This grant has been funded since 1994, by a series of five and three-year renewals. We express our deep appreciation for the long-standing support by OFES for our fusion materials research. The latest three-year renewal was awarded in 2019. This renewal subsequently received a 1- year no-cost extension, followed by another funded 1-year phaseout period. Here, we focus on this five-year effort. The final report is composed of 35 Fusion Semiannual Reports covering the period from 2019 to 2024. In addition, Appendix A lists 158 fusion materials papers published since 1994, with the partial, or full, support of the OFES program. We note that, as metrics of their high impact, these papers have received a total of 8582 citations, with an average of 54 per paper.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of amorphous pockets on displacement damage evolution in silicon

Silicon has long been known to exhibit amorphization in response to heavy particle bombardment. For doses below the total amorphization threshold, partial amorphization is observed in the form of scattered amorphous pockets. While extensive research has gone into modeling the formation and evolution of amorphous pockets in response to irradiation, no studies yet investigate their impact on the evolution of other damage such as interstitial supersaturation and clustering. In this study, we survey the impact of amorphous pockets on defect evolution in silicon when treated as static sinks. MD is first used to show that amorphous pockets provide energetically favorable sites for point defects relative to the crystalline bulk, supporting the hypothesis that they act as sinks. A 0-D cluster dynamics model is then constructed, taking an interstitial clustering model from the literature and including amorphous pockets as a sink species. We conduct our survey for temperatures between 30 and 400 °C and sink strengths between 1 to 6 x 10 10 cm −2 . Both implantation- and radiation-induced damage states are investigated using interstitial and vacancy concentrations as initial condition variables. We find that, due to the differing migration rates of the interstitial and the vacancy, amorphous pockets have a non-monotonic impact on the final damage state depending on the effective sink strength of the amorphous pockets, resulting in increased damage formation in regimes of intermediate amorphization. In conclusion, this result emphasizes the important role of amorphous pockets in governing the evolution of damage in partially amorphized crystalline materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of proton-induced damage in thick, p-channel skipper-CCDs

Here, in this work, we characterize the radiation-induced damage in two thick, p-channel skipper-CCDs irradiated unbiased and at room temperature with 217-MeV protons. We evaluate the overall performance of the sensors and demonstrate their single-electron/single-photon sensitivity after receiving a fluence on the order of 10 10 protons/cm 2 . Using the pocket-pumping technique, we quantify and characterize the proton-induced defects from displacement damage. We report an overall trap density of 0.134 traps/pixel for a displacement damage dose of 2.3 × 10 7 MeV/g. Three main proton-induced trap species were identified, V 2 , C i O i and V n O m , and their characteristic trap energies and cross sections were extracted. We found that while divacancies are the most common proton-induced defects, C i O i defects have a greater impact on charge integrity at typical operating temperatures because their emission-time constants are comparable or larger than typical readout times. To estimate ionization damage, we measure the characteristic output transistor curves. We found no threshold voltage shifts after irradiation. Our results highlight the potential of skipper-CCDs for applications requiring high-radiation tolerance and can be used to find the operating conditions in which effects of radiation-induced damage are mitigated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Generalized rate theory for void and bubble swelling and its application to δ -plutonium

A rate theory for void and bubble swelling is derived that allows both vacancies and self-interstitial atoms to be generated by thermal activation at all sinks. In addition, they can also be produced by displacement damage from external and internal radiation. This generalized rate theory (GRT) is applied to swelling of gallium-stabilized δ-plutonium in which α-decay causes the displacement damage. Since the helium atoms produced also become trapped in vacancies, a distinction is made between empty and occupied vacancies. The growth of helium bubbles observed by transmission electron microscopy in weapons-grade and in material enriched with Pu238 is analyzed, using different values for the formation energy of self-interstitial atoms (SIA) and two different sets of relaxation volumes for the vacancy and for the SIA. One set allows preferential capture of SIA at dislocations, while the other set gives equal preference to both vacancy and SIA. It is found that the helium bubble diameters observed are in better agreement with GRT predictions if no preferential capture occurs at dislocations. Therefore, helium bubbles in δ-plutonium will not evolve into voids. Furthermore, the helium density within the bubbles remains sufficiently high to cause thermal emission of SIA. Based on a helium density between two to three helium atoms per vacant site, the sum of formation and migration energies must be around 2.0 eV for SIA in δ-plutonium.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2026

X-ray characterization of fully-depleted p-channel Skipper-CCDs for the DarkNESS mission

The Dark matter Nanosatellite Equipped with Skipper Sensors (DarkNESS) mission is a 6U CubeSat designed to search for X-ray lines from decaying dark matter using Skipper-CCDs. Thick, fully-depleted p-channel Skipper-CCDs provide low readout noise and high quantum efficiency for 1-10 keV X-rays, but their X-ray performance has not yet been demonstrated in the space environment. DarkNESS will operate in low-Earth orbit, where trapped protons induce displacement damage in the sensor that increases charge-transfer inefficiency and degrades the X-ray energy resolution. This work measures the X-ray line response of Skipper-CCDs before and after proton irradiation and quantifies the associated degradation. A sensor was exposed to 217 MeV protons at a fluence of 8.4 x 10^10 protons cm^-2, corresponding to a displacement-damage dose more than an order of magnitude above the three-year expectation for representative mid-inclination and Sun-synchronous low-Earth orbits. A 55Fe source was used to compare the energy resolution of the beam-exposed quadrant to adjacent unexposed quadrants and a non-irradiated reference sensor. These measurements provide a quantitative assessment of radiation-induced spectral degradation in Skipper-CCDs and enable an estimate of the end-of-life X-ray energy resolution expected for DarkNESS operation in low-Earth orbit.

Alpine, Phoenix [Illinois U., Urbana] (ORCID:00090↗
DOE OSTI2025

Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams

Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.

MOSFET↗
DOE OSTI2024

Phase stability and microstructure of neutron-irradiated substoichiometric yttrium dihydrides

The impact of the neutron-displacement damage on phase stability and microstructure of substoichiometric yttrium dihydrides (YH x , x <2) were investigated to assess their use as solid moderator in high-temperature nuclear reactors. YH x specimens were, thus, subjected to neutron irradiations in the range of 0.1–2 displacements per yttrium atom (dpa-Y) in the temperature range of 536–878°C at the Oak Ridge National Laboratory's (ORNL's) High Flux Isotope Reactor (HFIR). YH x specimens were initially prepared at stoichiometry (H/Y) ratios of 1.69 and 1.83. HFIR-irradiated specimens were characterized by variety of techniques to investigate H retention characteristics including dimensional analysis, optical microscopy, scanning electron microscopy electron back scatter diffraction (EBSD), transmission electron microscopy, thermal desorption spectroscopy (TDS), and high-energy x-ray diffraction (HE-XRD) characterizations. Overall, YH x exhibited notable structural and phase stability under short-term neutron-irradiation, except for the samples with significant silicon carbide (SiC) interaction at high doses and temperatures. Basic dimensional and mass measurements were misleading for accurate assessment of H retention, as confirmed by EBSD phase maps, XRD line profiles, and TDS signals. Thus, it was discussed that a robust H retention metric is needed to assess irradiated hydrides. Further, nanoscale cavities were observed as a result of the neutron irradiation in all samples. Although no clear impact of dose and irradiation temperature was determined, the initial H/Y ratio had an impact on the cavity number density where low H/Y specimens had high-resistance to cavity formation. The Y-vacancy cluster formation at the collision stage of the displacement cascade and their stabilization by H were considered to be the likely underlying mechanisms for the observed cavity microstructure.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2026

In situ cryogenic characterization of proton damage in thick p-channel skipper CCDs

Skipper charge-coupled devices (CCDs) are an offshoot of standard silicon pixel detectors and are capable of performing repeated non-destructive charge measurements, enabling deeply sub-electron readout noise. This capability has opened the door to single-photon counting from the near-infrared ($\sim$1.1 $μ$m) to the soft X-ray (several keV), making these devices strong candidates for future astronomical instruments operating in the photon-starved limit. Furthermore, the p-channel architecture used to fabricate Skipper CCDs on n-type silicon has been demonstrated to have an increased hardness to the intense radiation environment of space. Building upon previous irradiation campaigns on room-temperature sensors, here we describe the first radiation-hardness tests of p-channel skipper CCDs at their cryogenic operating temperatures. We assess the performance of the floating-gate output stage and global CCD parameters (charge transfer inefficiency, dark current, hot pixels, and charge traps). We find that these devices maintain excellent performance after displacement damage doses equivalent to ${\sim}$10 years at the Earth/Sun L2 Lagrange point, demonstrating for the first time that these sensors remain radiation-hard in realistic deep-space thermal and radiation environments.

Roach, Brandon M. [Chicago U., KICP] (ORCID:000000↗
DOE OSTI2024

Dopant, coating, and grating effects in silica optical fibers under extreme neutron irradiation

Radiation effects on fiber Bragg gratings (FBGs) have been studied but data gaps related to the effects of displacement damage resulting from high fast neutron fluence remain. In this work, Type-I and Type-II FBGs inscribed in optical fibers with various core dopants (Ge and F) and fiber coatings (acrylate, polyimide) were monitored in situ during 75 days of neutron irradiation to a peak fast (>0.1 MeV) neutron fluence of 3 X 10 21 n fast /cm 2 . Further, the reflected intensity of the Type-I FBGs inscribed in a Ge-doped core fiber decreased by > 30 dB within 7 h of irradiation (10 19 n fast /cm 2 ), whereas Type-II FBGs inscribed in a pure silica core fiber eventually approached >40 dB attenuation after accumulating a fast neutron fluence on the order of 10 20 n fast /cm 2 . Type-II FBGs inscribed in F-doped core fiber improved stability: the attenuation approached an equilibrium value in the range of 10 to 20 dB.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

The interaction of edge dislocations with hydrogen-helium bubbles in tungsten

In fusion reactors, plasmas-facing components undergo degradation due to displacement damage and injection of gas impurities. Significant amounts of hydrogen (H) and helium (He) impurities can be introduced into materials through plasma exposure and nuclear transmutation, and their synergistic effects lead to the formation of mixed He/H bubbles under irradiation, changing their hardening mechanisms. In this study, molecular dynamics (MD) models were developed to study the interaction between ½<111> edge dislocations with mixed He/H-bubbles in W. The critical resolved shear stress (CRSS) that is required for dislocation breakaway increases with He/H-to-vacancy ratio at 600 K, indicating strong pinning effects of mixed He/H bubbles. However, as the temperature increases up to 1400 K, the mixed He/H bubbles become unstable as the H atoms are increasingly emitted from the mixed He/H bubbles and migrate into W matrix, which lowers bubble pressure and CRSS. Overall, these results highlight the synergistic effects of He and H on dislocation behavior in irradiated W during deformation.

36 - MATERIALS SCIENCE↗
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Proton radiation resilience of CdSeTe photovoltaics: High predicted end-of-life performance for space applications

Two types of cadmium selenide telluride (CdSeTe) photovoltaic devices have been exposed to high-energy (150–1500 keV) protons with fluences ranging from 1 × 10 11 to 9 × 10 13 cm −2 . Pre- and post-irradiation current density vs voltage characteristic data were collected and analyzed. Arsenic-doped CdSeTe devices retained 80% of the power conversion efficiency (PCE) relative to control devices after exposure to 10 12 cm −2 650 keV protons, while copper-doped CdSeTe devices retained about 95% of the control PCE under the same irradiation condition. Displacement damage dose analysis coupled with simulations for duration-dependent performance in a medium Earth orbit space mission revealed superior PCE remaining factors, indicating greater resilience to proton bombardment than state-of-the-art multijunction III-V based space photovoltaic technologies.

CdTe solar cells↗