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18 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Remote Radiation Sensing Using Aerial and Ground Platforms

Remote sensing of ionizing radiation has a significant role in waste management, nuclear material management and nonproliferation, and radiation safety. Robotic platforms can surpass the number of tasks that are achieved by humans. With this technique, the operator's radiation exposure can be decreased. Remote sensing allows for the evaluation and monitoring of radiological contamination. Gamma-ray and neutron sensors were integrated onto the robotic platforms. This approach allows for the radiation sensor data to be dynamically tracked and mapped thus enabling further analysis of the radiation flux in temporal and spatial domains. The goal is to complete scheduled tasks while the robot is being irradiated. To achieve this, electronic components must be shielded and radiation hardened. CZT Detector: Cadmium Zinc Telluride (CZT) detector technology has been a promising solution for gamma-ray and x-ray measurements. Detector data is transferred to the Odroid minicomputer that controls and powers the module via the USB. Robot Operating System (ROS) was utilized for data acquisition and data fusion. The Mariscotti method was employed for the spectrum analysis. A function was programmed in ROS for the automatic identification of photopeaks. CLYC Detector: A Cs{sub 2}LiYCl{sub 6}:Ce{sup 3+} (CLYC) detector was used for simultaneous medium-resolution gamma-ray measurements and neutron counting. A 2.54 cm diameter photomultiplier tube (PMT) was equipped with a high voltage supply and a miniature digitizer. Gamma-ray excitation: fast core-to-valence luminescence (CVL) with 1 ns decay constant, and prompt Ce{sup 3+} emission with 50 ns decay constant. Neutron excitation: slow cerium self-trapped excitation (Ce{sup 3+} STE), 1000 ns decay constant. Radiation Source Localization: Maximum Likelihood Estimation (MLE) and gradient-based methods were used to locate the position of a radiation source based on measured radiation intensities. Multi-Particle Transport Code FLUKA: Estimation of radiation damage of the electronic components is important in order to optimize the robot's operational time while it is irradiated. Displacement per atom (DPA) represents the radiation damage in materials exposed to the ionizing radiation. Various shielding layers of different thickness t were analyzed (< 5% statistical error). The model of the controller of the UAS was designed in FLUKA. Conclusion: CZT and CLYC detectors were integrated onto the robotic platforms. Radiation source localization and contour mapping using robotic platforms were studied. Functions for data analysis and fusion were developed in ROS. FLUKA code was utilized to analyze DPA values. Layers of low-density and high-density materials were used to shield the UAS electronics.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2020

Radioactive Source Localization via Bayesian Particle Filter

In the event of a misplaced radioactive source or other emergency situation, measuring a radiation field, mapping its distribution, and determining a source location are essential tasks to ameliorating the situation. However, radiation fields may be extremely hazardous to human surveyors and minimizing received radiation doses is just as essential. Robots appear to be a potential solution to these problems. Beyond simply measuring radiation, the robot's computer processing capabilities offer a way to apply complex data analysis methods to radiation measurements in real-time. Methods which predict likely source locations can then feed this information into other processes, potentially improving path planning and enabling more efficient measurements. Given a robot mounted with a gamma-ray detector, can we: develop a methodology to account for detector performance across a wide range of source angles, distances, and photon energies? operate an autonomously navigating robot to effectively survey and characterize an area of interest? implement a data analysis method, conventionally used in measurements of motion, for source localization purposes? An open-source TurtleBot 3 robot, running Robot Operating System (ROS) on Ubuntu 16.04 LTS, was fitted with a Kromek GR1{sup R} Cadmium Zinc Telluride (CZT) solid-state gamma-ray detector. As a part of ROS, the packages OpenSlam, gmapping, and amcl were used to perform Simultaneous Localization and Mapping (SLAM), determining the robot's position and mapping the surrounding area. Data was acquired via Lidar mounted on top the TurtleBot 3. Detector Calibration Fit: The equation was fit to 365 counts of various energies, distances, and angles. A MATLAB{sup R} program was written to simulate measurements taken a robot on a random walk, with count data and positions discretized into finite element pixels. Using this program, a sample of 100 runs was performed on a map with a simulated source at the center, with a total of 200 of 2 pixels each. Similarly, multiple runs of the filter were performed on recorded robot measurement data. In both simulation and real tests, when corrected for errors (particles placed outside of bounds or on the robot, and simulation-specific errors), corresponding t-tests of predicted x and y-coordinates were within a 95% confidence interval of the actual position. For the real trial, these positions are slightly skewed right in the x-axis as the robot remained mainly to the left side of the source within the sample area. These simulations demonstrate potential validity for the usage of a particle filter as method of radioactive source localization. In the future, true real-time implementation and data fusion may further augment the performance of the robot to localize lost sources. Additionally, identification of multiple sources, determination of source types, and usage of a collimator are areas to potentially be explored.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2021

Fabrication of Low-Cost Large-Volume Ceramic A 2 HfX 6 (A= Cs or Tl, X = Cl, Br, or I) Scintillators for Gamma Ray Detection (SBIR Phase I Final Technical Report)

Scintillator crystals play an important role in the radiation detection field. Widespread use of scintillators as gamma-ray detectors is largely generated by their extensive availability and tunable properties, such high light output, high stopping power (Z eff ), fast decay time, and good proportionality. Additionally, the cost for manufacturing a scintillation detector like NaI:Tl is usually considerably lower than the cost for manufacturing a semiconductor detector like CdZnTe. Because there is no such thing as an ideal scintillation material, an application requiring certain detection characteristics may incorporate a scintillator tailored to its specific properties. The vast variety of applications and requirements necessitates more research into new scintillation materials and/or better methods of producing existing materials.The goal of this project was to grow low cost and environmentally stable inorganic transparent ceramic scintillators with excellent gamma ray resolution, excellent energy proportionality, excellent detection efficiency due to high density (>5 g/cm 3 ) and very high Z eff (55-80), and good light yields (>40,000 ph/MeV). In Phase I Xtallized Intelligence, Inc. (XI, Inc) developed a novel ceramic fabrication technique to produce low cost and environmentally stable highly efficient inorganic transparent ceramic scintillators of various dimensions. XI, Inc., collaborating with Fisk University (Fisk), investigated the scintillation properties of these new ceramic scintillators and compared them to in their single crystal counterparts. The results of this Phase I project show that successful production of high-quality inorganic halide ceramic scintillators Cs 2 HfCl 6 (CHC) and Tl 2 HfCl 6 (THC). Both ceramic CHC and THC scintillators have achieved good performance close to the performance of their single crystal counterparts. Fabricating these inorganic ceramic scintillators mitigate many issues encountered during conventional bulk crystal growth by melt methods. Additional benefits of the ceramic fabrication technique include high production yield, low production cost, fast production time, and no material waste Inorganic transparent ceramic scintillators produced in this project will enhance cost effectiveness at the instrument level based on low projected cost of the proposed compounds, as much smaller crystal sizes would be required to achieve similar efficiency as current radioisotope identification devices (RIID’s) used in homeland security applications as well as spectrometers in high energy physics applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Fission Product Gas Monitoring During Fuel Drying Operations - 20094

The goal of the project was to devise and implement a method of accurately qualifying any noble gas emitted during fuel drying operations (part of the dry fuel storage process) in order to provide the data needed to validate the off-site dose calculations. The imputes of the project was the NRC publishing Information Notice 18-01, 'Noble Fission Gas Releases During Spent Fuel Cask Loading Operations' in February 2018. The information notice describes some industry events that occurred during vacuum drying operations as part of a dry fuel campaign. The solution was devised by Fort Calhoun Station staff in partnership with Mirion Technologies technical staff. The monitoring was accomplished by directing all the effluent from the fuel storage cask vacuum drying machine through a sample chamber containing a compact ISOCS characterized CZT based gamma spectrometer connected to a Mirion Data Analyst. This resulted near real-time quantification of the radionuclides of concern. (authors)

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2021

Production-Ready CsPbBr3 Module Fabrication

The purpose of this SBIR was to work on evaluation, development, and testing of CsPbBr3 semiconductors for use in commercial gamma-ray detection. The overarching goal was to demonstrate the capability to fabricate functional detectors through resources available to H3D, Inc in pursuit of an alternative to CdZnTe for room-temperature semiconductor detectors. Throughout the project, CdZnTe crystals from Redlen were used as a control group to demonstrate whether the fabrication processes could produce reasonable results. The CdZnTe crystals were diced into roughly 6 mm x 6 mm x 4.5 mm pieces and electrodes were evaporated onto planar faces. In one case, pixels were patterned through a laser ablation method; in the other, a rudimentary pixel shadow-mask was fabricated, and the pixels were generated in the evaporation process. A 16 mm x 16 mm x 14 mm CsPbBr3 crystal was diced into four smaller crystals. These CsPbBr3 had electrodes applied in a similar way to the CdZnTe samples with a rudimentary mask used for pixels on the cathode. Tested CdZnTe pieces were found to generally function with reasonable, low-energy performance. CsPbBr3 crystals were found to be non-functional under forward bias with a large dark-current. A separate attempt, using reverse bias in a non-H3D, Inc test system, observed a dark current similar to previous observations, and some active pixels but no waveforms were observed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Multimodal characterization of Te inclusions in Cd 1−x Zn x Te and Cd 1−x Zn x Te 1−y Se y for gamma and X-ray detectors

While CdZnTe (CZT) and CdZnTeSe (CZTS) semiconductors have emerged as compounds for room-temperature gamma and X-ray detection materials, they continue to be constrained by the formation of Te-inclusion defects generated during the growth and post-growth phases of the material, which adversely affect the detector performance. We demonstrate the utility of multimodal microscopic imaging and analysis for the characterization of the optical and electronic properties of Te inclusions in CZT and CZTS crystals at both micron and nanometer length scales. Having first identified regions with micron-scale Te inclusions using confocal Raman microscopy techniques, optically coupled infrared scattering near-field optical microscopic mapping was performed to map the distribution of these inclusions with nanometer spatial resolution and correlate the presence of Te inclusions in the matrix with other properties. Kelvin probe force microscopy was then utilized to characterize the variations of the work function associated with the presence of Te inclusions. Here, we observe an increase of ~ 240 mV in the work function associated with Te inclusions compared to the bulk CZT/CZTS crystals. Additionally, we observe that individual bulk grains in CZT can exhibit slight potential variations. Our findings develop a portrait of the charge trapping mechanisms in CZT and CZTS that act to degrade detector performance, while the demonstration of these combined microscopy techniques provides a new analytical tool that can be utilized for further optimization of the detector performance for these semiconducting compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Using 3D position sensitivity to reveal response non-uniformities in CdZnTe, TlBr, and CsPbBr 3 detectors

Position sensitivity enables the correction of response non-uniformities in room-temperature semiconductor detectors caused by crystal defects and other factors. It can also be used to pinpoint the exact location of crystal defects responsible for the response variations. This work describes a technique for revealing and visualizing the detector regions affecting the charge collection efficiency in CdZnTe (CZT), TlBr, and CsPbBr 3 detectors configured as position-sensitive virtual Frisch-grid (VFG) devices. The technique correlates the photopeak events in energy spectra with their spatial distributions inside the detectors using the position information. By selecting the events from narrow energy intervals within a photopeak, we can visualize the detector volumes with particular charge collection efficiencies, which, in turn, correlate with the locations of electrode and crystal defects. Here, we demonstrate this technique in several examples. Columnar structures in the volume plots (position distribution maps) are consistent with signal losses near or at the anode in selected samples of CZT and TlBr. Structures exhibiting a distinct depth dependence are consistent with grain boundaries or other crystal defects.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
DOE OSTI2024

Role of Selenium in CdZnTeSe as a Defect Engineering Agent

Cadmium zinc telluride (CdZnTe) with 10 atomic % Zn has been the material of choice for room-temperature semiconductor compact X- and gamma-ray detector applications for over three decades. Despite its commercial success as the most desirable room-temperature semiconductor radiation detection material, CdZnTe (CZT) suffers from a lack of compositional homogeneity on both the micro- and macroscales and the presence of high concentrations of performance-limiting defects such as subgrain boundary networks (dislocation walls) and secondary phases (Te-rich inclusions). Random distributions of these defects in the CZT matrix result in the spatial inhomogeneity of the material’s charge-transport properties. The recently discovered quaternary Cd x Zn 1-x Te 1-y Se y (CZTS) has experienced remarkable advances in its material properties, with highly reduced defects and higher compositional homogeneity. This book chapter focuses on the presence of performance-limiting defects in CZT that have thus far hindered the yield and cost of high-quality detectors and restricted their widespread deployment for a variety of potential applications, particularly for their use as large-volume gamma detectors, where the demands on material perfection are significantly greater. This chapter also provides an overview of the recent developments in the quaternary material CZTS, particularly the effects of selenium (Se) in the CZTS matrix on the defect engineering of the quaternary alloy material and the advancement of CZTS as a potential next-generation detector operable at room temperature.

Roy, Utpal N.↗
DOE OSTI2024

Characterization of Crystal Properties and Defects in CdZnTe Radiation Detectors

CdZnTe-based detectors are highly valued because of their high spectral resolution, which is an essential feature for nuclear medical imaging. However, this resolution is compromised when there are substantial defects in the CdZnTe crystals. In this study, we present a learning-based approach to determine the spatially dependent bulk properties and defects in semiconductor detectors. This characterization allows us to mitigate and compensate for the undesired effects caused by crystal impurities. We tested our model with computer-generated noise-free input data, where it showed excellent accuracy, achieving an average RMSE of 0.43% between the predicted and the ground truth crystal properties. In addition, a sensitivity analysis was performed to determine the effect of noisy data on the accuracy of the model.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Effect of Surface Passivation of CZTS Semiconductor Detector on Leakage Current

Cadmium Zinc Telluride Selenide (CdZnTeSe or CZTS)has shown high crystal quality for room-temperature gamma ray and X-ray detection applications compared to Cadmium Zinc Telluride (CdZnTe or CZT) [1,2]. Current applications of CZT include medical imaging, homeland security, and X-ray and gamma ray astronomy [3]. CZST has similar potential applications

Kangethe, Anthony [Morgan State Univ., Baltimore, ↗
DOE OSTI2021

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10 10 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241 Am.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Optimization of selenium in CdZnTeSe quaternary compound for radiation detector applications

X- and gamma-ray detectors are increasingly becoming essential tool for science and technology in various fields include homeland security, nonproliferation, nuclear security, medical imaging, astrophysics, and high energy physics. Cd 1-x Zn x Te 1-y Se y (CZTS) is emerging as a next-generation compound semiconductor for such applications. CZTS was found to possesses a very low concentration of Te inclusions and free from sub-grain boundary networks. Being a quaternary compound with varying alloy composition, optimization of the composition was performed to determine the minimum amount of selenium required to produce CZTS with reduced defects. The optimized composition was found to be x=0.10 and y=0.02, i.e., Cd 0.9 Zn0.1Te 0.98 Se 0.02 , for excellent material properties as a radiation detector. The resulting material was free from sub-grain boundary networks and with a highly reduced concentration of Te inclusions. The bulk dark resistivity obtained was in the range of 1-3x1010 ohm-cm with the highest achieved mobility-lifetime product of ~6.6x10-3 cm2/V for the optimized CZTS composition. Impurity analyses were performed by the Glow Discharge Mass Spectroscopy (GDMS) technique, and the results showed relatively high impurity concentrations compared to commercial detector-grade CdZnTe. Thus, CZTS has room for further improvement with additional purification of the starting materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

CdZnTeSe: Recent advances for radiation detector applications

The quest for cost-effective, high performing room temperature semiconductor detector (RTSD) materials for high energy gamma rays has been continuing for more than three decades. The requirements for RTSD materials, however, are more stringent as compared to other applications unrelated to detection of X- and gamma-rays, mainly due to the requirement of thick detectors for sufficient absorption of high-energy electromagnetic radiation and excellent charge-transport properties. The II-VI compound CdZnTe (CZT) with the composition of 10 atomic % Zn (Cd0.9Zn0.1Te) has been the material of choice over the past several years, and it has dominated the commercial market for RTSD materials and detectors. Despite its commercial success as a room temperature radiation detection material, CZT suffers from a lack of compositional homogeneity on both a micro- and macro-scale and the presence of high concentrations of sub-grain boundary (dislocation walls) networks and secondary phases (Te-rich inclusions). This chapter focuses on the presence of performance-limiting defects in CZT that hinder the yield and elevate the cost of high-quality detectors. The presence of such performance-limiting defects has restricted widespread deployment of CZT for a variety of potential applications, particularly for uses of relatively large detectors where the demands on material perfection are significantly greater. In the recent past, replacing some of the tellurium with selenium in the CZT matrix was found to be very effective in drastically reducing the Te-rich secondary phases and dislocation networks, plus

Roy, Utpal N.↗
DOE OSTI2024

Improving CdMnTe Detector Performance by Adding 2% of Selenium

About 2% of selenium was added to CdMnTe (CMT) to reveal the role of selenium in CMT material used as a gamma-ray detector. The average etch-pit density (EPD) in a typical 2-in CdMnTeSe (CMTS) wafer was measured to be about 8.3×10 3 cm –2 except for the edge regions, and the radial nonuniformity of the bandgap along the wafer was about 2-meV. The typical mobility-lifetime product of electrons and holes was evaluated to be 3.06×10 –3 cm 2 /V and 3.1×10 –4 cm 2 /V, respectively. The energy resolution of the 122-keV photo-peak for a Co-57 radioactive source with a planar CMTS detector was 5.2%, demonstrating a positive effect associated with adding dilute amounts of Se to CMT. Finally, the enhanced detector performance in a planar CMTS detector is attributed to an improved value of hole mobility-lifetime product in CMTS, which mitigates the adverse hole tailing effect found in CdZnTe (CZT) and CMT detectors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Evaluation of crystalline quality of traveling heater method (THM) grown Cd0.9Zn0.1Te0.98Se0.02 crystals

Because of its excellent opto-electronic properties, CdZnTe (CZT) has been the material of choice for x- and gamma-ray detectors operable at room temperature. CZT is the leading commercially available room-temperature radiation detector material today. Although much progress has been made over the past three decades, today's CZT crystals still face certain challenges, especially the presence of the performance-limiting materials defects and the associated relatively high production cost. In this regard, CdxZn1−xTeySe1−y (CZTS) is emerging as a next-generation compound semiconductor, which overcomes some of the limitations of CZT technology for the stated applications. Here, we conducted a study to evaluate the crystalline quality of the traveling heater method grown CZTS with an optimized alloy composition, i.e., Cd0.9Zn0.1Te0.98Se0.02. The as-grown samples were evaluated by low-temperature photoluminescence (PL) spectroscopy and high-resolution x-ray diffraction using the synchrotron light source at Brookhaven National Laboratory. The full width at half maximum of both the PL and x-ray rocking curves was observed to be broadened due to the lattice disorder of the quaternary compound, eventually degrading the crystalline quality. This was consistent with density functional theory calculations.

Roy, U. N. (ORCID:0000000282089680)↗
DOE OSTI2020

Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors

A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applications. In contrast, rapid deposition on inexpensive substrates or nanocrystalline films yields low costs, but comparatively inferior crystallinity, carrier transport, and recombination. Here, we present methods to deposit single-crystal material at rates 2-3 orders of magnitude faster than state-of-the-art epitaxy with low-cost methods without compromising crystalline or electro-optical quality. For example, single-crystal CdTe and CdZnTe films that would take several days to grow by molecular-beam epitaxy are deposited in 8 minutes by close-spaced sublimation, yet retain the same crystalline quality measured by X-ray diffraction rocking curves. The fast deposition is coupled with effective n- and p-type in-situ doping by In, P, and As. The epitaxy can be extended to nanocrystalline substrates. For example, we recrystallize thin CdTe films on glass to deposit large grains with low defect density. The results provide new research paths for photovoltaics, detectors, infrared imaging, flexible electronics, and other applications.

14 SOLAR ENERGY↗
DOE OSTI2023

Growth interface study of CdTeSe crystals grown by the THM technique

The Traveling Heater Method (THM) is a widely accepted technique to grow high-quality detector grade CdTe and CdZnTe ingots, especially for X-ray and gamma-ray detector applications. Unlike melt-growth techniques, the growth interface for ingots produced by the THM technique consists of two different compounds, viz. the solidified region (just below the interface) consists of the compound to be grown (e.g., CdZnTe for CdZnTe growth), while the molten zone just above the growth interface consists of Te-rich CdZnTe. Thus, optimization of the growth parameters is critical to obtain a clean growth interface with the required shape and presence of minimal Te-rich inclusions. Here, in this study, CdTeSe ingots were grown employing the THM technique to investigate the growth interface. Both macroscopic and microscopic behavior of the interface were studied. The study revealed that a microscopically smooth growth interface can be achieved by optimizing the growth parameters, which is essential for obtaining high-quality, inclusion-free ingots.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
DOE OSTI2025

Spatial variation of the low-temperature micro-photoluminescence of THM-grown CdZnTeSe

The quaternary compound CdZnTeSe (CZTS) has emerged as a next-generation detector material. Unlike CdZnTe (CZT), CZTS has the distinct advantages of little or no sub-grain boundary networks and a much lower concentration of Te inclusions, plus better compositional homogeneity. Thus, the material is expected to offer better spatial charge-transport homogeneity compared to CZT. However, an inhomogeneous distribution of point defects in both CZT and CZTS, such as Cd vacancies and residual impurities, can impose additional spatial inhomogeneity of the resistivity, carrier mobilities, and carrier lifetimes of the material. To investigate the spatial distribution of such defects in CZTS, low-temperature photoluminescence (PL) spectroscopic studies were performed at different positions along a single crystalline CZTS sample surface, which was grown by the traveling heater method (THM). In conclusion, the intensity variation of the PL emission of excitons bound to a neutral acceptor defect (A 0 , X), which is likely dominated by an acceptor like Cu-related level, with respect to the PL emission line from a neutral donor-bound exciton (D 0 , X) exhibited significant spatial variation, while the peak energy positions were approximately uniform due to the high compositional and bandgap homogeneity of the material.

II-VI semiconductor↗