S-D exchange model of zero-bias tunneling anomalies
S-D exchange model of zero bias tunneling anomalies observed in meta P-N junctions
ANOMALY↗
SEARCH · Engineering Papers
Results for “junctions”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The nature of a moving dislocation band found when zinc is diffused into gallium arsenide
Moving dislocation band and p-n junction planarity with zinc as diffusant in gallium arsenide
ZINC↗
Photovoltaic Effect and Utilization of Photovoltaic Cells - Effect of Sub-threshold Electron Radiation on Surface Properties of Ge P-V Cells Second Semiannual Report, 1 Nov. 1965 - 31 May 1966
Effect of high energy electron irradiation on surface recombination properties of germanium p-n junction photovoltaic cells
GERMANIUM↗
Degradation of transistor performance due to passage of small-Coulomb high-voltage surges
High voltage pulse causing beta degradation and junction resistance drop in transistor
ELECTRIC PULSE↗
Field and charge dependence of radiation damage in silicon.
Impurity concentration effect of electron irradiation damage in photovoltaic silicon cell with shallow p-n junction
SILICON↗
Design, development and fabrication of prototype semiconductor amplifiers Final report, 17 Mar. 1965 - 16 Mar. 1966
Fabrication of high temperature silicon carbide integrated circuit using junction-gate type field effect transistor as active component
JUNCTION TRANSISTOR↗
Physical models of active devices
Physical model of large-signal junction transistor
JUNCTION TRANSISTOR↗
Tunnel emission cold cathodes
Vacuum chamber characteristics and tungsten, tungsten oxide, gold tunnel junction fabrication for tunnel emission cold cathodes
TUNNEL CATHODE↗
Microinhomogeneity problems in silicon.
Electron microscopy analysis of microinhomogeneities in commercial Si used in preparation of p-n junction devices
INHOMOGENEITY↗
Millimeter wave diodes for harmonic power generation.
Point contact electrically formed semiconductor junction diodes, discussing harmonic generation by various material combinations
MILLIMETER WAVE↗
Solar cell radiation damage on satellites Relay I and Relay II.
Radiation damage to satellite solar cells when shielded to various degrees, stressing silicon junction cells
SILICON JUNCTION↗
AlGaN Channel Transistors for Power Management and Distribution
Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.
ENERGY MANAGEMENT↗
A Submillimeter Wave SIS Receiver for 547 GHz
The most sensitive heterodyne receivers used for millimeter wave and submillimeter wave radioastronomy employ superconductor-insulator-superconductor tunnel junctions as the nonlinear mixing element.
heterodyne receivers submillimeter wave SIS tunnel↗
Advances in Discrete GaAs JFETs and Simple Amplifiers for Deep Cryogenic Readouts
The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
cryogenic readout gallium arsenide junction field-↗
Superconducting Quantum Arrays for Wideband Antennas and Low Noise Amplifiers
Superconducting Quantum Iinetference Filters (SQIF) consist of a two-dimensional array of niobium Josephson Junctions formed into N loops of incommensurate area. This structure forms a magnetic field (B) to voltage transducer with an impulse like response at B0. In principle, the signal-to-noise ratio scales as the square root of N and the noise can be made arbitrarily small (i.e. The SQIF chips are expected to exhibit quantum limited noise performance). A gain of about 20 dB was recently demonstrated at 10 GHz.
SQUID Detectors↗
Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology
The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.
Radiation↗
A Portable High-Density Power Technology for Space, Lunar, and Planetary Applications
A new direct energy conversion concept called Nuclear Thermionic Avalanche Cell (NTAC) combined with a Metallic Junction Thermoelectric (MJ-TE) generator, both invented and patented by NASA, offers high specific power for portable applications. Estimates based on experimental results suggest superior performance compared to radioisotope thermoelectric generators (RTG) by up to two orders of magnitude for the NTAC and three to four times better for the MJ-TE generator for the same mass. The NTAC technology can use a variety of radioisotopes including nuclear waste to liberate a large number of intra-band(IB), inner shell electrons of atoms (105 C/cm3) by gamma-ray photons (100 keV to MeV). In contrast, conventional power generation has poor specific power because they only utilize the valence band electrons (3C/cm3) of the semiconductor or free electrons (8×103 C/cm3) of the conductor.
NTAC↗
Record Efficiency InGaAs Thermophotovoltaic Cells For Energy Storage Applications
Utility-scale energy storage is a significant technical challenge and a key barrier to widespread adoption of renewable energy. An efficient, modular, and scalable solution can be achieved by storing energy in the form of high-temperature heat and then extracting energy, on demand, using thermophotovoltaic (TPV) cells to convert the heat back to electricity. The ideal thermal emitter temperature is determined by balancing the desire for higher power densities, high-temperature compliant materials, and efficient, cost-effective thermophotovoltaic cells, among other considerations. 0.74-eV InGaAs lattice-matched to InP is a good choice for a cell absorber, and here we describe our development of InGaAs TPV cells with efficiencies of 38.8% from an ~1850 degrees celsius source temperature. This is the highest efficiency yet measured and reported for a single-junction TPV device. This efficiency was achieved by carefully quantifying and then reducing the parasitic absorption in the semiconductor layers, and by significantly reducing the series resistance to minimize the power loss.
ENERGY STORAGE,ENGINEERING,SOLAR ENERGY↗