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At least 1,693 records · Page 94

All sources NASA NTRS DOE OSTI

DOE OSTI2024

Electronic properties of corundum-like Ir 2 O 3 and Ir 2 O 3 -Ga 2 O 3 alloys

In the hexagonal, corundum-like structure, α-Ga 2 O 3 has a bandgap of ~5.1 eV, which, combined with its relatively small electron effective mass, high Baliga's figure of merit, and high breakdown field, makes it a promising candidate for power electronics. Ga 2 O 3 is easy to dope n-type, but impossible to dope p-type, impeding the realization of some electronic device designs. Developing a lattice-matched p-type material that forms a high-quality heterojunction with n-type Ga 2 O 3 would open new opportunities in electronics and perhaps optoelectronic devices. In this work, we studied Ir 2 O 3 as a candidate for that purpose. Using hybrid density functional theory calculations we predict the electronic band structure of α-Ir 2 O 3 and compare that to α-Ga 2 O 3 , and study the stability and electronic properties of α-(Ir x Ga 1–x ) 2 O 3 alloys. We discuss the band offset between the two materials and compare it with recently available experimental data. We find that the Ir d bands that compose the top of the valence band in α-Ir 2 O 3 are much higher in energy than O p bands in α-Ga 2 O 3 , possibly enabling effective p-type doping. Finally, our results provide an insight into using the Ir 2 O 3 or Ir 2 O 3 -Ga 2 O 3 alloys as p-type material lattice-matched to α-Ga 2 O 3 for the realization of p–n heterojunctions.

36 MATERIALS SCIENCE↗

NASA NTRS1985

Solder Bonding for Power Transistors

Indium solder boosts power rating and facilitates circuit changes. Efficient heat conduction from power transistor to heat sink provided by layer of indium solder. Low melting point of indium solder (141 degrees C) allows power transistor to be removed, if circuit must be reworked, without disturbing other components mounted with ordinary solder that melts at 181 degrees C. Solder allows devices operated at higher power levels than does conventional attachment by screws.

Snytsheuvel, H. A.↗

NASA NTRS2004

Miniature Radioisotope Thermoelectric Power Cubes

Cube-shaped thermoelectric devices energized by a particles from radioactive decay of Cm-244 have been proposed as long-lived sources of power. These power cubes are intended especially for incorporation into electronic circuits that must operate in dark, extremely cold locations (e.g., polar locations or deep underwater on Earth, or in deep interplanetary space). Unlike conventional radioisotope thermoelectric generators used heretofore as central power sources in some spacecraft, the proposed power cubes would be small enough (volumes would range between 0.1 and 0.2 cm3) to play the roles of batteries that are parts of, and dedicated to, individual electronic-circuit packages. Unlike electrochemical batteries, these power cubes would perform well at low temperatures. They would also last much longer: given that the half-life of Cm-244 is 18 years, a power cube could remain adequate as a power source for years, depending on the power demand in its particular application.

Patel, Jagdish U.↗

DOE OSTI2022

Subcutaneous power supply by NIR-II light

Implantable medical devices are wished to be recharged via contactless power transfer technologies without interventional operations. Superior to subcutaneous power supply by visible light or electromagnetic wave, second near-infrared (NIR-II) light is predicted to possess 60 times subcutaneous power transmission but hard to be utilized. Here we report a photo-thermal-electric converter via the combination of photothermal conversion and thermoelectric conversion. It is able to generate an output power as high as 195 mW under the coverage of excised tissues, presenting advantages of non-invasion, high output power, negligible biological damage, and deep tissue penetration. As an in vivo demonstration, the output power of a packaged converter in the abdominal cavity of a rabbit reaches 20 mW under NIR-II light irradiation through the rabbit skin with a thickness of 8.5 mm. This value is high enough to recharge an implanted high-power-consumption wireless camera and transfer video signal out of body in real-time.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2017

Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe 2 -MoS 2 lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. As a result, these robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.

14 SOLAR ENERGY↗

NASA NTRS2013

High-Power, High-Speed Electro-Optic Pockels Cell Modulator

Electro-optic modulators rely on a change in the index of refraction for the optical wave as a function of an applied voltage. The corresponding change in index acts to delay the wavefront in the waveguide. The goal of this work was to develop a high-speed, high-power waveguide- based modulator (phase and amplitude) and investigate its use as a pulse slicer. The key innovation in this effort is the use of potassium titanyl phosphate (KTP) waveguides, making the highpower, polarization-based waveguide amplitude modulator possible. Furthermore, because it is fabricated in KTP, the waveguide component will withstand high optical power and have a significantly higher RF modulation figure of merit (FOM) relative to lithium niobate. KTP waveguides support high-power TE and TM modes - a necessary requirement for polarization-based modulation as with a Pockels cell. High-power fiber laser development has greatly outpaced fiber-based modulators in terms of its maturity and specifications. The demand for high-performance nonlinear optical (NLO) devices in terms of power handling, efficiency, bandwidth, and useful wavelength range has driven the development of bulk NLO options, which are limited in their bandwidth, as well as waveguide based LN modulators, which are limited by their low optical damage threshold. Today, commercially available lithium niobate (LN) modulators are used for laser formatting; however, because of photorefractive damage that can reduce transmission and increase requirements on bias control, LN modulators cannot be used with powers over several mW, dependent on wavelength. The high-power, high-speed modulators proposed for development under this effort will enable advancements in several exciting fields including lidarbased remote sensing, atomic interferometry, free-space laser communications, and others.

Hawthorne, Justin↗

DOE OSTI2021

Perovskite Solar Cells Go Bifacial—Mutual Benefits for Efficiency and Durability

Bifacial solar cells hold the potential to achieve a higher power output per unit area than conventional monofacial devices without significantly increasing manufacturing costs. However, efficient bifacial designs are challenging to implement in inorganic thin-film solar cells because of their short carrier lifetimes and high rear surface recombination. The emergence of perovskite photovoltaic (PV) technology creates a golden opportunity to realize efficient bifacial thin-film solar cells, owing to their outstanding optoelectronic properties and unique features of device physics. More importantly, transparent conducting oxide electrodes can prevent electrode corrosion by halide ions, mitigating one major instability issue of the perovskite devices. Here, the theory of bifacial PV devices is summarized and the advantages of bifacial perovskite solar cells, such as high power output, enhanced device durability, and low economic and environmental costs, are reviewed. The limitations and challenges for bifacial perovskite solar cells are also discussed. Lastly, the awareness of bifacial solar cells as a feasible commercialization pathway of perovskite PV for mainstream solar power generation and building-integrated PV is advocated and future research directions are suggested.

14 SOLAR ENERGY↗

DOE OSTI2024

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

Herath Mudiyanselage, Dinusha (ORCID:0000000186119↗

DOE OSTI2014

Modulation-mediated unlocking of a parametrically phase-locked spin torque oscillator

Modulation of an oscillator is crucial for its application in communication devices. While the output power and linewidth of single magnetic tunnel junction-based spin-torque oscillators (MTJ-STO) are not yet adequate for practical uses, the synchronization of such devices can overcome these limitations. Here, we investigate the modulation behavior of a parametrically synchronized MTJ-STO and show experimentally that modulation of the synchronized state preserves synchronization as long as the modulation frequency, f{sub mod}, is above a characteristic frequency, f{sub unlock}. The unlocking frequency increases with the modulation amplitude in agreement with analytical estimates and numerical simulations. These phenomena are described as a non-resonant unlocking mechanism, whose characteristics are directly related to inherent parameters of the oscillator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1970

Small, efficient power supply for xenon lamps

Device, which operates from 28 V dc, has four sections, a preregulator, a dc-to-dc converter, a current regulator, and a high voltage starter. The unique characteristics of the individual sections are described.

Goodwin, J. E.↗

NASA NTRS1980

Semiconductor step-stress testing

Report documents behavior of discrete diodes and transistors in extensive power and temperature overstress tests. Thirty nine devices were tested in groups designated: (1) power overstress, and (2) and (3) temperature overstress. Results are of interest to users of tested components and engineers in conduction of similar tests.

Meeks, H. B.↗

NASA NTRS1988

High-power 0.87-micron channel substrate planar lasers for spaceborne communications

High-power single-mode channeled-substrate planar AlGaAs diode lasers are being developed for reliable high-power operation for use as sources in spaceborne optical communication systems. The CSP laser structure has been optimized for operation at an emission wavelength of 870 nm. Such devices have exhibited output powers in excess of 80 mW CW at an operating temperature of 80 C.

Connolly, J. C.↗

NASA NTRS1989

Vacuum microelectronics for beam power and rectennas

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Gray, Henry F.↗

NASA NTRS2004

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗

NASA NTRS2011

Phase change material thermal power generator

An energy producing device, for example a submersible vehicle for descending or ascending to different depths within water or ocean, is disclosed. The vehicle comprises a temperature-responsive material to which a hydraulic fluid is associated. A pressurized storage compartment stores the fluid as soon as the temperature-responsive material changes density. The storage compartment is connected with a hydraulic motor, and a valve allows fluid passage from the storage compartment to the hydraulic motor. An energy storage component, e.g. a battery, is connected with the hydraulic motor and is charged by the hydraulic motor when the hydraulic fluid passes through the hydraulic motor. Upon passage in the hydraulic motor, the fluid is stored in a further storage compartment and is then sent back to the area of the temperature-responsive material.

Jones, Jack A.↗

NASA NTRS2009

Turboelectric Distributed Propulsion Engine Cycle Analysis for Hybrid-Wing-Body Aircraft

Meeting NASA's N+3 goals requires a fundamental shift in approach to aircraft and engine design. Material and design improvements allow higher pressure and higher temperature core engines which improve the thermal efficiency. Propulsive efficiency, the other half of the overall efficiency equation, however, is largely determined by the fan pressure ratio (FPR). Lower FPR increases propulsive efficiency, but also dramatically reduces fan shaft speed through the combination of larger diameter fans and reduced fan tip speed limits. The result is that below an FPR of 1.5 the maximum fan shaft speed makes direct drive turbines problematic. However, it is the low pressure ratio fans that allow the improvement in propulsive efficiency which, along with improvements in thermal efficiency in the core, contributes strongly to meeting the N+3 goals for fuel burn reduction. The lower fan exhaust velocities resulting from lower FPRs are also key to meeting the aircraft noise goals. Adding a gear box to the standard turbofan engine allows acceptable turbine speeds to be maintained. However, development of a 50,000+ hp gearbox required by fans in a large twin engine transport aircraft presents an extreme technical challenge, therefore another approach is needed. This paper presents a propulsion system which transmits power from the turbine to the fan electrically rather than mechanically. Recent and anticipated advances in high temperature superconducting generators, motors, and power lines offer the possibility that such devices can be used to transmit turbine power in aircraft without an excessive weight penalty. Moving to such a power transmission system does more than provide better matching between fan and turbine shaft speeds. The relative ease with which electrical power can be distributed throughout the aircraft opens up numerous other possibilities for new aircraft and propulsion configurations and modes of operation. This paper discusses a number of these new possibilities. The Boeing N2 hybrid-wing-body (HWB) is used as a baseline aircraft for this study. The two pylon mounted conventional turbofans are replaced by two wing-tip mounted turboshaft engines, each driving a superconducting generator. Both generators feed a common electrical bus which distributes power to an array of superconducting motor-driven fans in a continuous nacelle centered along the trailing edge of the upper surface of the wing-body. A key finding was that traditional inlet performance methodology has to be modified when most of the air entering the inlet is boundary layer air. A very thorough and detailed propulsion/airframe integration (PAI) analysis is required at the very beginning of the design process since embedded engine inlet performance must be based on conditions at the inlet lip rather than freestream conditions. Examination of a range of fan pressure ratios yielded a minimum Thrust-specific-fuel-consumption (TSFC) at the aerodynamic design point of the vehicle (31,000 ft /Mach 0.8) between 1.3 and 1.35 FPR. We deduced that this was due to the higher pressure losses prior to the fan inlet as well as higher losses in the 2-D inlets and nozzles. This FPR is likely to be higher than the FPR that yields a minimum TSFC in a pylon mounted engine. 1

Felder, James L.↗

NASA NTRS2014

Phase Change Material Thermal Power Generator

Jones, Jack A.↗

DOE OSTI2021

High power handling digitizer using photonics

Devices, methods for analog-to-digital converters (ADCs) that perform high-dynamic range measurements based on optical techniques are disclosed. In one example aspect, an optical encoder includes a polarization rotator configured to receive a train of optical pulses, and an electro-optic (EO) modulator coupled to an output of the polarization rotator. The EO modulator is configured to receive a radio frequency (RF) signal and to produce a phase modulated signal in accordance with the RF signal. The optical encoder also includes a polarizing beam splitter coupled to the output of the EO modulator; and an optical hybrid configured to receive two optical signals from the polarizing beam splitter and to produce four optical outputs that are each phase shifted with respect to one another.

DeVore, Peter Thomas Setsuda↗