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NASA NTRS · 19790000455

Semiconductor step-stress testing

Abstract

Report documents behavior of discrete diodes and transistors in extensive power and temperature overstress tests. Thirty nine devices were tested in groups designated: (1) power overstress, and (2) and (3) temperature overstress. Results are of interest to users of tested components and engineers in conduction of similar tests.

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BibTeXRIS

Meeks, H. B., Villella, F.. 1980-06-01. Semiconductor step-stress testing. https://ntrs.nasa.gov/citations/19790000455

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