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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Improved joining method uses wave-soldering techniques developed for integrated-circuit-board assemblies. Thermosetting plastic is replaced by wave soldering, which applies a thin even coat of solder to mating copper surfaces. This is done after ink holes and channels have been protected by water-soluble, high-temperature solder mask which prevents wetting and clogging.
Microprocessor-based interface simplifies interconnection of peripheral device with common memory of network of minicomputers. Interface consists of microprocessor, bidirectional port that connects to common memory, bidirectional port that connects to user-selected peripheral, and asynchronous serial communications port. Programable interface is based around 6800 microprocessor. It is assembled from 90 integrated circuits.
Simple, low-cost magnetometer is suitable for heading-reference applications in autopilots and other directional control systems. Sensing element utilizes commercially available transformer core; and supporting electronics consist of one transistor, two readily-available integrated-circuit chips, and associated resistors and capacitors.
A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.
The relationship between discharge phenomena and plasma chemistry, as well as the equipment and mechanisms of plasma chemical reactions are described. Various areas in which plasma chemistry is applied are surveyed, such as: manufacturing of semiconductor integrated circuits; synthetic fibers; high polymer materials for medical uses; optical lenses; and membrane filters (reverse penetration films).
The results of a preliminary study on the design of a radiation hardened fusible link programmable read-only memory (PROM) are presented. Various fuse technologies and the effects of radiation on MOS integrated circuits are surveyed. A set of design rules allowing the fabrication of a radiation hardened PROM using a Si-gate CMOS process is defined. A preliminary cell layout was completed and the programming concept defined. A block diagram is used to describe the circuit components required for a 4 K design. A design goal data sheet giving target values for the AC, DC, and radiation parameters of the circuit is presented.
The overall LSI (large-scale integrated circuits) architecture design and current status of the VBLI (very long baseline interferometry) block 2 correlator is addressed. The VBLI correlator algorithms demand a computing system that provides a throughput of hundreds of millions of instructions per second to perform cross-correlation detection for six baselines. The LSI technology lights the way for the computation of complex parallel process and is raising the upper bound of computerization.
The planned final assembly of the Galileo spacecraft propulsion system tubing, which involves welding in close proximity to sensitive electronics, raised significant concerns about the effects of electromagnetic coupling of weld energy on CMOS and other sensitive integrated circuits. A test program was established to assess the potential of an orbital arc welder and an RF-induction brazing machine to damage sensitive electronic equipment. Test parameters were varied to assess the effectiveness of typical transient suppression practices such as grounding, bonding, and shielding. A technique was developed to calibrate the hazard levels at the victim-circuit location; this technique is described along with the results and conclusions of the test program.
Water-vapor sample holder for mass spectrometer contains water vapor for calibration. It is sealed by aluminum disk. Calibration sample and integrated circuit modules are tested sequentially in same manner.
Two integrated circuits, BCD-to-decimal decoder and four-input NAND gate, form basic four, input XOR circuit. Multiple-input exclusive-OR logic is implemented by combining several basic elements. 16-input XOR gate is assembled from five NAND gates and five decoders. Same principle extended to handle more inputs.
In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.
28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.
Compact dc/dc inverter uses single integrated-circuit package containing six inverter gates that generate and amplify 100-kHz square-wave switching signal. Square-wave switching inverts 10-volt local power to isolated voltage at another desired level. Relatively high operating frequency reduces size of filter capacitors required, resulting in small package unit.
A plasma interaction analysis in support of the solar electric propulsion subsystem examined the effects of a large high voltage solar array interacting with an ion thruster produced plasma. Two solar array test modules consisting of 36 large area wraparound contact solar cells welded to a flexible Kapton integrated circuit substrate were abricated. The modules contained certain features of the effects of insulation, din-holes, and bonding of the cell to the substrate and a ground plane. The possibility of a significant power loss occurring due to the collection of charged particles on the solar array interconnects was the focus of the research.
Ion implantation techniques that permit the reproducible fabrication of bipolar GaAs integrated circuits are studied. A 15 stage ring oscillator and discrete transistor were characterized between 25 and 400 C. The current gain of the transistor was found to increase slightly with temperature. The diode leakage currents increase with an activation energy of approximately 1 eV and dominate the transistor leakage current 1 sub CEO above 200 C. Present devices fail catastrophically at about 400 C because of Au-metallization.
A 12 bit A/D converter was designed and developed which will operate at 200 C with .05 linearity, 1/accuracy, 350 WSec conversion time, and only 455 mW power consumption. This product also necessitated the development of a unique three metal system in which aluminum wire bonding is done utilizing aluminum bonding pads, gold wire bonding to all gold areas, and employment of a nickel interface between gold and aluminum connections. This system totally eliminates the formation of a intermetallics at the bonding interface which can lead to bond failure. This product represents an advancement in electronics as it proved the operation of integrated circuits at high temperature, as well as providing information about both the electrical and mechanical reliability of hybrid circuits at 200 C.
Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.
A computer program for parametric amplifier design is developed with special emphasis on practical design considerations for microwave integrated circuit degenerate amplifiers. Precision measurement techniques are developed to obtain a more realistic varactor equivalent circuit. The existing theory of a parametric amplifier is modified to include the equivalent circuit, and microwave properties, such as loss characteristics and circuit discontinuities are investigated.