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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,657 records · Page 92
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Annual Conference on Nuclear and Space Radiation Effects, 14th, College of William and Mary, Williamsburg, Va., July 12-15, 1977, Proceedings

Topics related to processing and hardness assurance are considered, taking into account the radiation hardening of CMOS technologies, technological advances in the manufacture of radiation-hardened CMOS integrated circuits, CMOS hardness assurance through process controls and optimized design procedures, the application of operational amplifiers to hardened systems, a hard off-the-shelf SG1524 pulse width modulator, and the gamma-induced voltage breakdown anomaly in a Schottky diode. Basic mechanisms are examined, giving attention to chemical and structural aspects of the irradiation behavior of SiO2 films on silicon, experimental observations of the chemistry of the SiO2/Si interface, leakage current phenomena in irradiated SOS devices, the avalanche injection of holes into SiO2, the low-temperature radiation response of Al2O3 gate insulators, and neutron damage mechanisms in silicon at 10 K. Other subjects discussed are related to radiation effects in devices and circuits, space radiation effects, and aspects of simulation, energy deposition, and dosimetry.

Stahl, R. H.↗
NASA NTRS1979

Remote manipulator for IC wafers

Mechanical manipulator automatically loads, transports, and unloads silicon wafers between processing stations in large-scale integrated-circuit fabrication facility at Marshall Space Flight Center thus eliminating need for human opeators at various stages in processing cycle. It also reduces possibility of wafer contamination.

Hudgins, J. L.↗
NASA NTRS1979

Digital phase shifter

Device requiring only TTL integrated circuits and single 5-volt power supply, varies phase shift of digital input over approximate range of 15 to 165 deg.

Perry, M. G.↗
NASA NTRS1979

Quality control during IC processing

Manual gives detailed test procedures for controlling silicon-wafer processing in manufacture of integrated circuits. Included among 43 test procedures are: ionic, bacterial, and solids contamination of high-purity water needed for wafer processing; crystallographic reflection, purity, and orientation; substrate dimensions and finish; thickness of deposited epitaxial films; oxide quality; photoresist characteristics; pinholes in insulating layers; metallized adhesion; and quality of ohmic contact.

Source record↗
NASA NTRS1980

Improved insulator layer for MIS devices

Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.

Miller, W. E.↗
NASA NTRS1980

CMOS/SOS processing

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

Ramondetta, P.↗
NASA NTRS1980

Proposed Josephson voltage standard

Relatively-simple microwave integrated circuit comprising two resonators linked by Josephson junction could be set up to generate standard Josephson volt in any industrial laboratory. Standard cells and electronic equipment could be readily compared and calibrated to this standard.

Chang, C. C.↗
NASA NTRS1976

Design, processing, and testing of LSI arrays for space station

The applicability of a particular process for the fabrication of large scale integrated circuits is described. Test arrays were designed, built, and tested, and then utilized. A set of optimum dimensions for LSI arrays was generated. The arrays were applied to yield improvement through process innovation, and additional applications were suggested in the areas of yield prediction, yield modeling, and process reliability.

Ipri, A. C.↗
NASA NTRS1979

Electrical Characterization of Hughes HCMP 1853D and RCA CDP1853D N-bit, CMOS, 1-of-8 Decoder Microcircuits

Electrical characterization tests were performed on two different manufactured types of integrated circuits. The devices were subjected to functional and AC and DC parametric tests at ambient temperatures of -55 C, -20 C, 25 C, 85 C, and 125 C. The data were analyzed and tabulated to show the effect of operating conditions on performance and to indicate parameter deviations among devices in each group. Accuracy was given precedence over test time efficiency where practical, and tests were designed to measure worst case performance.

Stokes, R. L.↗
NASA NTRS1977

Non-parametric PCM to ADM conversion

An all-digital technique to convert pulse code modulated (PCM) signals into adaptive delta modulation (ADM) format is presented. The converter developed is shown to be independent of the statistical parameters of the encoded signal and can be constructed with only standard digital hardware. The structure of the converter is simple enough to be fabricated on a large scale integrated circuit where the advantages of reliability and cost can be optimized. A concise evaluation of this PCM to ADM translation technique is presented and several converters are simulated on a digital computer. A family of performance curves is given which displays the signal-to-noise ratio for sinusoidal test signals subjected to the conversion process, as a function of input signal power for several ratios of ADM rate to Nyquist rate.

Locicero, J. L.↗
NASA NTRS1978

Real-time SAR image processing onboard a Venus orbiting spacecraft

The potential use of real-time SAR processing to produce 200-meter resolution imagery onboard a 1983 Venus Orbiter Imaging Radar (VOIR) spacecraft is discussed. The current NASA SAR processor development program and its relationship to the VOIR application are described. VOIR SAR processing requirements are defined in terms of a nominal baseline design evolving from a 1977 VOIR mission study by JPL. A candidate onboard SAR processor architecture compatible with the VOIR requirements is described. Detailed implementation characteristics, based on currently available integrated circuits, are estimated in terms of chip count, weight, and power.

Arens, W. E.↗
NASA NTRS1978

Sensors and detectors in NASA's future missions

Advances in electronics are responsible for major improvements in NASA's sensing and detection capabilities for future space missions. Technologies such as charge-transfer devices, tunable diode lasers, millimeter and submillimeter wave solid-state receiver components, large-scale circuit integration, new electronic materials and processing techniques, and novel detector electronics are contributing to the goal of a tenfold increase in the capacity of data collection from future platforms and will be used for space exploration and utilization.

Rubin, B.↗
NASA NTRS1981

Automatic chemical vapor deposition

Report reviews chemical vapor deposition (CVD) for processing integrated circuits and describes fully automatic machine for CVD. CVD proceeds at relatively low temperature, allows wide choice of film compositions (including graded or abruptly changing compositions), and deposits uniform films of controllable thickness at fairly high growth rate. Report gives overview of hardware, reactants, and temperature ranges used with CVD machine.

Kennedy, B. W.↗
NASA NTRS1981

Simple JFET oscillator

Device used in mixers, modulators, and function generators provides stable sine-wave signal compatible with both integrated circuits and discrete-component assemblies. Oscillator's frequency is tunable over narrow band about design value. Frequency range, stability, linearity, and low power drain of device are suited to communications receivers and transmitters and digital microprocessors, computers, and displays. Circuit simplicity allows for easy monolithic construction.

Kleinberg, L. L.↗
NASA NTRS1979

Digital PSK to BiO-L demodulator for 2 sup nx(bit rate) carrier

A phase shift key (PSK) to BiO-L demodulator which uses standard digital integrated circuits is discussed. The demodulator produces NRZ-L, bit clock, and BiO-L outputs from digital PSK input signals for which the carrier is a 2 to the Nth multiple of the bit rate. Various bit and carrier rates which are accommodated by changing various component values within the demodulator are described. The use of the unit for sinusoidal inputs as well as digital inputs is discussed.

Shull, T. A.↗
NASA NTRS1980

Pioneer Venus Orbiter neutral gas mass spectrometer experiment

The Pioneer Venus Orbiter Neutral Mass Spectrometer (ONMS) is designed to measure the vertical and horizontal density variations of the major neutral constituents in the upper atmosphere of Venus. The mass spectrometer sensor includes a retarding potential ion source, hyperbolic quadrupole rod analyzer, and electron multiplier detector. The supporting electronic system consists of hybrid integrated circuits to reduce weight and power. The ONMS instrument was launched aboard the Pioneer Venus Orbiter on May 20, 1978, and turned on in orbit around Venus on December 4, 1978. It has operated flawlessly for over a Venus year (243 earth days) and has returned data of the composition of the major constituents in the Venus atmosphere between the altitudes of 150 and 350 km.

Niemann, H. B.↗
NASA NTRS1982

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗