NASA NTRS · 19790000302
Improved insulator layer for MIS devices
Abstract
Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.
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Miller, W. E.. 1980-04-01. Improved insulator layer for MIS devices. https://ntrs.nasa.gov/citations/19790000302
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