Results for “SWITCHING” — Page 91

NASA NTRS2022

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

Rainee N. Simons↗

NASA NTRS2020

An inflationary probe of cosmic Higgs switching

A scalar Higgs field can be repeatedly switched on and off when it couples to a classically oscillating scalar modulus field. The modulus flips the Higgs mass term between stable and tachyonic values. We study a cosmological scenario in which such repeated phase transitions occur during inflation. An irrelevant operator coupling the Higgs field to the inflaton can then imprint the pattern of phase transitions in the correlation functions of the inflaton. Using both numerical and analytic studies, we show that the inflaton 2-point function carries characteristic imprints of the modulus oscillation and its effect on the Higgs boson. We briefly remark on the potential observability of such patterns and how they might be distinguished from other dynamics in the early universe.

JiJi Fan↗

NASA NTRSDate not supplied

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

High power amplifier↗

NASA NTRS2023

Thermal Vacuum and Vibration Testing of the Differential Thermal Expansion Thermal Switch

The Extended Stroke, Reverse Operation, Differential Thermal Expansion (DTE) Thermal Switch (TS) for Extreme Variable Environments uses materials with both positive and negative coefficients of thermal expansion (CTE) arranged in concentric cylinders so that the TS operates passively, opening a gap between interfaces to create a low thermal contact when cold, and closing the gap between interfaces to create a high thermal contact when hot. This paper details the testing of the TS at Marshall Space Flight Center (MSFC) including the vibration (vibe) test, pre-vibe thermal vacuum (t-vac) cycle test, post-vibe t-vac cycle test, and long duration t-vac cycle test. The data collected from the pre- and post-vibe tests are compared to show the impact of the vibe test on performance. The data collected from the long duration test is used to calculate the total thermal contact conductance through the TS interfaces for both ‘on’ (TS closed, during hot plateau) and ‘off’ (TS open, during cold plateau) configurations, and the turndown ratio is also calculated. Challenges experienced throughout testing are also discussed.

Thermal control technology↗

NASA NTRSDate not supplied

Passive PCB Mounted Thermal Switch

A printed circuit board (PCB) generates heat during operation. In a vacuum this heat can only be rejected by conduction and radiation. In order to reject heat effectively the PCB needs to be thermally conductive to the electronics enclosure. However, when the enclosure temperature gets too low, too much heat is rejected from the PCB and it can fail. This thermal switch has been designed to allow for heat rejection when the PCB is sufficiently warm but then greatly reduce heat rejection when the temperature gets low enough.

Jarret Bone↗

NASA NTRS2023

Thermal Vacuum and Vibration Testing of the Differential Thermal Expansion Thermal Switch

The Extended Stroke, Reverse Operation, Differential Thermal Expansion (DTE) Thermal Switch (TS) for Extreme Variable Environments uses materials with both positive and negative coefficients of thermal expansion (CTE) arranged in concentric cylinders so that the TS operates passively, opening a gap between interfaces to create a low thermal contact when cold, and closing the gap between interfaces to create a high thermal contact when hot. This paper details the testing of the TS at Marshall Space Flight Center (MSFC) including the vibration (vibe) test, pre-vibe thermal vacuum (t-vac) cycle test, post-vibe t-vac cycle test, and long duration t-vac cycle test. The data collected from the pre- and post-vibe tests are compared to show the impact of the vibe test on performance. The data collected from the long duration test is used to calculate the total thermal contact conductance through the TS interfaces for both ‘on’ (TS closed, during hot plateau) and ‘off’ (TS open, during cold plateau) configurations, and the turndown ratio is also calculated. Challenges experienced throughout testing are also discussed.

Thermal control technology↗

NASA NTRSDate not supplied

Passive PCB Mounted Thermal Switch

A printed circuit board (PCB) generates heat during operation. In a vacuum this heat can only be rejected by conduction and radiation. To reject heat effectively and avoid overheating, the PCB needs to be thermally conductive to the electronics enclosure. However, if the system rejects too much heat, or not enough heat, either can result in system failure. The thermal switch will be able to regulate the amount of heat the system rejects to stay within the operational temperature range.

Jarret Bone↗

DOE OSTI2017

Configurable Crossbar Switch for Deterministic, Low-latency Inter-blade Communications in a MicroTCA Platform

As MicroTCA expands into applications beyond the telecommunications industry from which it originated, it faces new challenges in the area of inter-blade communications. The ability to achieve deterministic, low-latency communications between blades is critical to realizing a scalable architecture. In the past, legacy bus architectures accomplished inter-blade communications using dedicated parallel buses across the backplane. Because of limited fabric resources on its backplane, MicroTCA uses the carrier hub (MCH) for this purpose. Unfortunately, MCH products from commercial vendors are limited to standard bus protocols such as PCI Express, Serial Rapid IO and 10/40GbE. While these protocols have exceptional throughput capability, they are neither deterministic nor necessarily low-latency. To overcome this limitation, an MCH has been developed based on the Xilinx Virtex-7 690T FPGA. This MCH provides the system architect/developer complete flexibility in both the interface protocol and routing of information between blades. In this paper, we present the application of this configurable MCH concept to the Machine Protection System under development for the Spallation Neutron Sources's proton accelerator. Specifically, we demonstrate the use of the configurable MCH as a 12x4-lane crossbar switch using the Aurora protocol to achieve a deterministic, low-latency data link. In this configuration, the crossbar has an aggregate bandwidth of 48 GB/s.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2018

Reliable electrical contacts for high power photoconductive switches

A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.

42 ENGINEERING↗

DOE OSTI2019

Efficient IGBT switching

Embodiments of the invention provide IGBT circuit modules with increased efficiencies. These efficiencies can be realized in a number of ways. In some embodiments, the gate resistance and/or voltage can be minimized. In some embodiments, the IGBT circuit module can be switched using an isolated receiver such as a fiber optic receiver. In some embodiments, a single driver can drive a single IGBT. And in some embodiments, a current bypass circuit can be included. Various other embodiments of the invention are disclosed.

42 ENGINEERING↗

DOE OSTI2020

Smart and Efficient Building Envelopes: Thermal Switches and Thermal Storage for Energy Savings and Load Flexibility

The building envelope has traditionally been seen as a static component. Much of the past thermal advancements in building envelopes has consisted of developing higher R/inch insulation. While a suitable approach for static situations, it does not consider the dynamic nature of the ambient environment or the varying needs of the electrical grid. This paper will examine three possible ways that building envelopes can be actively managed: 1. thermal switches, 2. thermal storage, and 3. the coupling of the two. Spurring innovation to make building envelopes smarter will help reduce building energy consumption and peak energy usage and contribute to flexibility in energy demand in the future.

Mumme, Sven↗

DOE OSTI2020

Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes

A monolithically-integrated AC switch includes a semiconductor substrate having first and second insulated-gate field effect transistors therein, which contain first and second spaced-apart and independently-controllable source terminals extending adjacent a first surface of the semiconductor substrate, yet share a common drain electrode extending adjacent a second surface of the semiconductor substrate. According to some of these embodiments of the invention, the first and second insulated-gate field effect transistors include respective first and second independently-controllable gate electrodes, which extend adjacent the first surface. The first and second insulated-gate field effect transistors may be configured as first and second vertical power MOSFETs, respectively. The semiconductor substrate may also include at least one edge termination region therein, which extends between the first and second vertical power MOSFETs.

42 ENGINEERING↗

DOE OSTI2021

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗

DOE OSTI2021

Efficient IGBT switching

Embodiments of the invention provide IGBT circuit modules with increased efficiencies. These efficiencies can be realized in a number of ways. In some embodiments, the gate resistance and/or voltage can be minimized. In some embodiments, the IGBT circuit module can be switched using an isolated receiver such as a fiber optic receiver. In some embodiments, a single driver can drive a single IGBT. And in some embodiments, a current bypass circuit can be included. Various other embodiments of the invention are disclosed.

Ziemba, Timothy↗

DOE OSTI2022

Ultrafast optical switches using quantum wells

Colloidal quantum wells have discrete energy states and electrons in the quantum wells undergo interband and intersubband state transitions. The transmissivity of a colloidal quantum well may be tuned by actively controlling the states of the colloidal quantum wells enabling ultrafast optical switching. A primary excitation source is configured to provide a primary excitation to promote a colloidal quantum well from a ground state to a first excitation state. A secondary excitation source is configured to provide a secondary excitation to the colloidal quantum well to promote the colloidal quantum well from the first excitation state to the second excitation state with the first and second excitation states being subbands in the conduction band of the colloidal quantum well.

Diroll, Benjamin↗

DOE OSTI2022

Wide bandgap optical switch circuit breaker

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Voss, Lars F.↗

DOE OSTI2022

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗

DOE OSTI2023

High voltage switch with cascaded transistor topology

A switching apparatus includes three or more series-connected transistors, and it further includes a balancing network. The balancing network includes a resistor network configured to divide a voltage from a voltage source across the series-connected transistors. The resistor network includes at least two resistive legs connected in parallel. In each resistive leg, two or more resistors are connected in series. The balancing network may further comprise at least one capacitive leg of series-connected capacitors connected across the series-connected transistors, and it may further comprise at least one leg of series-connected avalanche diodes connected across the series-connected transistors for overvoltage protection. In example embodiments, the series-connected transistors are JFETs. In other example embodiments, the series-connected transistors may be HEMTs or GaN transistors.

Gill, Lee↗