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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

New technologies for solar energy silicon - Cost analysis of dichlorosilane process

A reduction in the cost of silicon for solar cells is an important objective in a project concerned with the reduction of the cost of electricity produced with solar cells. The cost goal for the silicon material is about $14 per kg (1980 dollars). The process which is currently employed to produce semiconductor grade silicon from trichlorosilane is not suited for meeting this cost goal. Other processes for producing silicon are, therefore, being investigated. A description is presented of results obtained for the DCS process which involves the production of dichlorosilane as a silicon source material for solar energy silicon. Major benefits of dichlorosilane as a silicon source material include faster reaction rates for chemical vapor deposition of silicon. The DCS process involves the reaction 2SiHCl3 yields reversibly SiH2Cl2 + SiCl4. The results of a cost analysis indicate a total product cost without profit of $1.29/kg of SiH2Cl2.

Yaws, C. L.↗
NASA NTRS1979

Development of a Process for a High Capacity Arc Heater Production of Silicon for Solar Arrays

A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant (sodium) are injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection were developed. Included in this report are: test system preparation; testing; injection techniques; kinetics; reaction demonstration; conclusions; and the project status.

Reed, W. H.↗
NASA NTRS1982

Silicon crystal growth in vacuum

The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

Khattak, C. P.↗
NASA NTRS1986

Producing Silicon Carbide for Semiconductor Devices

Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.

Hsu, G. C.↗
NASA NTRS1984

Silicon film solar cell process

The most promising way to reduce the cost of silicon in solar cells while still maintaining performance is to utilize thin films (10 to 20 microns thick) of crystalline silicon. The method of solution growth is being employed to grow thin polycrystalline films of silicon on dissimilar substrates. The initial results indicate that, using tin as the solvent, this growth process only requires operating temperatures in the range of 800 C to 1000 C. Growth rates in the range of 0.4 to 2.0 microns per minute and grain sizes in the range of 20 to 100 microns were achieved on both quartz and coated steel substrates. Typically, an aspect ratio of two to three between the width and the Si grain thickness is seen. Uniform coverage of Si growth on quartz over a 2.5 x 2.5 cm area was observed.

Hall, R. B.↗
NASA NTRS1982

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

The procedure used to generate MEBES masks and produce test wafers from the 10X Mann 1600 Pattern Generator Tape using existing CAD utility programs and the MEBES machine in the RCA Solid State Technology Center are described. The test vehicle used is the MSFC-designed SC102 Solar House Timing Circuit. When transforming the Mann 1600 tapes into MEBES tapes, extreme care is required in order to obtain accurate minimum linewidths when working with two different coding systems because the minimum grid sizes may be different for the two systems. The minimum grid sizes are 0.025 mil for MSFC Mann 1600 and 0.02 mil for MEBES. Some snapping to the next grid is therefore inevitable, and the results of this snapping effect are significant when submicron lines are present. However, no problem was noticed in the SC102 circuit because its minimum linewidth is 0.3 mil (7.6 microns). MEBES masks were fabricated and wafers were processed using the silicon-gate CMOS/SOS and aluminum-gate COS/MOS processing.

Woo, D. S.↗
NASA NTRS2015

High Power Silicon Carbide (SiC) Power Processing Unit Development

NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

Power Processing↗
NASA NTRS1981

Process feasibility study in support of silicon material task 1

Results for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells are presented. Analyses of process system properties are important for chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major physical, thermodynamic and transport property data are reported for silicon source and processing chemical materials.

Yaws, C. L.↗
NASA NTRS1979

Process Feasibility Study in Support of Silicon Material Task 1

Analysis of process system properties was continued for silicon source materials under consideration for producing silicon. The following property data are reported for dichlorosilane which is involved in processing operations for silicon: critical constants, vapor pressure, heat of vaporization, heat capacity, density, surface tension, thermal conductivity, heat of formation and Gibb's free energy of formation. The properties are reported as a function of temperature to permit rapid engineering usage. The preliminary economic analysis of the process is described. Cost analysis results for the process (case A-two deposition reactors and six electrolysis cells) are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon. Fixed capital investment estimate for the plant is $12.47 million (1975 dollars) ($17.47 million, 1980 dollars). Product cost without profit is 8.63 $/kg of silicon (1975 dollars)(12.1 $/kg, 1980 dollars).

Li, K. Y.↗
NASA NTRS1978

Low-cost Solar Array (LSA) project

Progress made by the Low-Cost Silicon Solar Array Project during the period January through March 1978 is reported. It includes task reports on silicon material processing, large-area silicon sheet development, encapsulation materials testing and development, project engineering and operations, and manufacturing techniques, plus the steps taken to integrate these efforts.

Source record↗
NASA NTRS1978

LSA: Low-cost Solar Array project

Topics discussed include silicon material processing; large-area silicon sheet development; encapsulation materials testing and development; project engineering and operations activities, and manufacturing techniques. The steps taken to integrate these efforts, are described.

Source record↗
NASA NTRS1980

Effect of production processes on the fracture strength of silicon solar cells

Fracture of Czochralski silicon wafers during processing is an important factor in solar cell yield and cost. A fracture-mechanics test and analysis program was developed to evaluate fracture strength changes in the in-process wafer-to-cell processing at different stages on a manufacturer's production line. The strength data were described by Weibull statistical analysis and can be interpreted with the surface-flaw distribution of each of the process steps.

Chen, C. P.↗
NASA NTRS1979

Solar silicon via the Dow Corning process

Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

Hunt, L. P.↗
NASA NTRS1988

Process Makes High-Grade Silicon

Reactants and electrolyte recycled to yield relatively pure product. Process based on reaction of silicon dioxide with aluminum. Aluminum for process taken from operating aluminum-electrolysis cell, and Al2O3 product returned to same cell. Aluminum continually recycled and purified, and purity of silicon high as well.

Keller, Rudolf↗
NASA NTRS1976

A program continuation to develop processing procedures for advanced silicon solar cells

Shallow junctions, aluminum back surface fields and tantalum pentoxide (Ta205) antireflection coatings coupled with the development of a chromium-palladium-silver contact system, were used to produce a 2 x 4 cm wraparound contact silicon solar cell. One thousand cells were successfully fabricated using batch processing techniques. These cells were 0.020 mm thick, with the majority (800) made from nominal ten ohm-cm silicon and the remainder from nominal 30 ohm-cm material. Unfiltered, these cells delivered a minimum AMO efficiency at 25 C of 11.5 percent and successfully passed all the normal in-process and acceptance tests required for space flight cells.

Avery, J. E.↗
NASA NTRS1985

Studies of oxygen-related and carbon-related defects in high-efficiency solar cells

Oxygen and carbon related defects in silicon, particularly as related to high-efficiency silicon solar cells were studied. A summary of oxygen processes in silicon versus process temperature was shown along with experimental results. The anamolous diffusion of oxygen was explained by the dissociation of the center allowing O sub i to move through the lattices.

Corbett, J. W.↗
NASA NTRS1979

Process feasibility study in support of silicon material, task 1

Analyses of process system properties were continued for materials involved in the alternate processes under consideration for semiconductor silicon. Primary efforts centered on physical and thermodynamic property data for dichlorosilane. The following property data are reported for dichlorosilane which is involved in processing operations for solar cell grade silicon: critical temperature, critical pressure, critical volume, critical density, acentric factor, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity and density. Work was initiated on the assembly of a system to prepare binary gas mixtures of known proportions and to measure the thermal conductivity of these mixtures between 30 and 350 C. The binary gas mixtures include silicon source material such as silanes and halogenated silanes which are used in the production of semiconductor silicon.

Li, K. Y.↗
NASA NTRS1982

Electromigration process for the purification of molten silicon during crystal growth

A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. The edge-defined film-fed crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities, migrated to one side only of the crystal ribbon, may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

Shlichta, P. J.↗