NASA NTRS · 20150023084
High Power Silicon Carbide (SiC) Power Processing Unit Development
Abstract
NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.
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Scheidegger, Robert J., Santiago, Walter, Bozak, Karin E., Pinero, Luis R., Birchenough, Arthur G.. 2015-10-11. High Power Silicon Carbide (SiC) Power Processing Unit Development. https://ntrs.nasa.gov/citations/20150023084
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